Patent US5376593A successfully refreshed from Google Patents.
US5376593A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating stacked layer Si3 N4 for low leakage high capacitance films using rapid thermal nitridation
Assignee: Micron Technology Inc
•
Filing: 1992-12-31
•
Granted: 1994-12-27
•
Expires: 2012-12-31
Abstract
Abstract A method for fabricating semiconductor wafers is disclosed, wherein a semiconductor substrate is provided in a chamber. Subsequently, a first silicon nitride layer is formed in situ under high pressure superjacent the substrate by introducing a gas containing nitrogen, preferably NH 3 combined with N 2 , at a temperature within the range of 850° C. to 1150° C. for approximately 10 to 60 seconds. This results in the first layer having a thickness in the approximate range of 5 Å to 30 Å. A semiconductor film is then deposited in situ under high pressure superjacent the first silicon nitride layer, preferably by means of Rapid Thermal Processing Chemical Vapor Deposition ("RTPCVD"). In an alternate embodiment of the present invention, this is accomplished by either Low Pressure Chemical Vapor Deposition ("LPCVD") or Molecular Beam Epitaxy ("MBE"). The thickness of the film is in the approximate range of 10 Å to 40 Å. Consequently, the film is transformed in situ under high pressure into a second silicon nitride layer by introducing a gas containing nitrogen, preferably NH 3 combined with N 2 , at a temperature substantially within the range of 850° C. to 1150° C. applied for approximately 10 to 60 seconds. The thickness of the second silicon nitride layer is substantially in the range of the thickness of the film. In one embodiment of the present invention, only a portion of the film is transformed into a second silicon nitride layer, thereby creating a remainder of the film subjacent the second silicon nitride layer. In this embodiment, the thickness of the second silicon nitride layer is less than the thickness of the film. Finally, a second semiconductor film is deposited superjacent the second layer in situ under high pressure. In one alternate embodiment of the present invention, a pair of silicon dioxide layers are grown between the step of providing a semiconductor substrate and the step of depositing a second semiconductor film.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Randhir P. S. Thakur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/66; H10P14/662; H10P14/692; H10P14/6921; H10P14/69215; H10P70/00; H10P70/10; H10P70/12; H10P70/125; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/075; H10W20/093; H10W20/096; H10W20/097; H10P14/6316; H10P14/6922; H10P14/6927
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
115 words
A method for fabricating semiconductor wafers, comprising the steps of: a) providing a clean substrate in a chamber, wherein said clean substrate is cleaned by introducing a gas comprising at least one of NF 3 , GeH 4 , HF, and H 2 diluted with Ar-H 2 and energy generating a temperature within the range of 850° C. to 1250° C. for approximately 10 to 60 seconds; b) forming a dielectric layer superjacent said substrate, said dielectric layer having a thickness; c) depositing a film superjacent said dielectric layer; d) converting said film to another dielectric layer, said another dielectric layer having another thickness; and e) depositing a subsequent layer superjacent said another dielectric layer.
Claim 2
Independent Claim
115 words
A method for fabricating semiconductor wafers, comprising the steps of: a) providing a clean substrate in a chamber, wherein said clean substrate is cleaned by introducing a gas comprising at least one of NF 3 , GeH 4 , HF, and H 2 diluted with Ar-H 2 and energy generating a temperature within the range of 850° C. to 1250° C. for approximately 10 to 60 seconds; b) forming a dielectric layer superjacent said substrate, said dielectric layer having a thickness; c) depositing a film superjacent said dielectric layer; d) converting said film to another dielectric layer, said another dielectric layer having another thickness; and e) depositing a subsequent layer superjacent said another dielectric layer.
Claim 3
Independent Claim
130 words
A method for fabricating semiconductor wafers, comprising the steps of: a) providing a clean substrate in a chamber; b) forming a dielectric layer superjacent said substrate, said dielectric layer having a thickness; c) depositing a film superjacent said dielectric layer; d) converting said film to another dielectric layer, said another dielectric layer having another thickness; e) depositing a subsequent layer superjacent said another dielectric layer; and f) forming at least one silicon dioxide layer, between said providing a substrate and said depositing a subsequent layer, said at least one silicon dioxide layer being formed by introducing a gas, comprising at least one of O 2 and N 2 O, and energy generating a temperature within the range of 850° C. to 1250° C. for approximately 5 seconds to 30 seconds.
Claim 4
Independent Claim
130 words
A method for fabricating semiconductor wafers, comprising the steps of: a) providing a clean substrate in a chamber; b) forming a dielectric layer superjacent said substrate, said dielectric layer having a thickness; c) depositing a film superjacent said dielectric layer; d) converting said film to another dielectric layer, said another dielectric layer having another thickness; e) depositing a subsequent layer superjacent said another dielectric layer; and f) forming at least one silicon dioxide layer, between said providing a substrate and said depositing a subsequent layer, said at least one silicon dioxide layer being formed by introducing a gas, comprising at least one of O 2 and N 2 O, and energy generating a temperature within the range of 850° C. to 1250° C. for approximately 5 seconds to 30 seconds.
Claim 5
Dependent Claim
39 words
A method for fabricating semiconductor wafers, according to claim 1, wherein said thickness is in the approximate range of 5 Å to 30 Å, and said another thickness is in the approximate range of 10 Å to 40 Å.
Claim 6
Dependent Claim
32 words
A method for fabricating semiconductor wafers, according to claim 2, wherein said substrate, said film, and said subsequent layer each comprise at least one of single-crystal silicon, polycrystalline silicon, and amorphous silicon.
Claim 7
Dependent Claim
42 words
A method for fabricating semiconductor wafers, according to claim 2, wherein said forming a dielectric layer, said depositing a film superjacent, said converting said film to another dielectric layer, and said depositing a subsequent layer are performed in situ under high vacuum.
Claim 8
Dependent Claim
25 words
A method for fabricating semiconductor wafers, according to claim 2, wherein said forming comprises the step of: exposing said substrate to a gas and energy.
Claim 9
Dependent Claim
31 words
A method for fabricating semiconductor wafers, according to claim 6, wherein said energy generates a temperature within the range of 850° C. to 1150° C. for approximately 10 to 60 seconds.
Claim 10
Dependent Claim
29 words
A method for fabricating semiconductor wafers, according to claim 1, wherein said forming comprises the step of: exposing said substrate to a gas and energy, said gas comprises nitrogen.
Claim 11
Dependent Claim
24 words
A method for fabricating semiconductor wafers, according to claim 6, wherein said gas comprises at least one of NH 3 and N 2 .
Claim 12
Dependent Claim
26 words
A method for fabricating semiconductor wafers, according to claim 1, wherein at least one of said dielectric layer and said another dielectric layer comprises silicon nitride.
Claim 13
Dependent Claim
24 words
A method for fabricating semiconductor wafers, according to claim 2, wherein said thickness is in the approximate range of 5 Å to 30 Å.
Claim 14
Dependent Claim
25 words
A method for fabricating semiconductor wafers, according to claim 2, wherein said another thickness is in the approximate range of 10 Å to 40 Å.
Claim 15
Dependent Claim
28 words
A method for fabricating semiconductor wafers, according to claim 12, wherein said film comprises a film thickness, said film thickness is in the range of said another thickness.
Claim 16
Dependent Claim
25 words
A method for fabricating semiconductor wafers, according to claim 2, wherein said converting comprises the step of: exposing said film to a gas and energy.
Claim 17
Dependent Claim
31 words
A method for fabricating semiconductor wafers, according to claim 14, wherein said energy generates a temperature within the range of 850° C. to 1150° C. for approximately 10 to 60 seconds.
Claim 18
Dependent Claim
29 words
A method for fabricating semiconductor wafers, according to claim 1, wherein said converting comprises the step of: exposing said film to a gas and energy, said gas comprises nitrogen.
Claim 19
Dependent Claim
24 words
A method for fabricating semiconductor wafers, according to claim 14, wherein said gas comprises at least one of NH 3 and N 2 .
Claim 20
Dependent Claim
26 words
A method for fabricating semiconductor wafers, according to claim 2, wherein at least one of said dielectric layer and said another dielectric layer comprises silicon nitride.
Claim 21
Dependent Claim
38 words
A method for fabricating semiconductor wafers, according to claim 2, wherein said depositing comprises rapid thermal processing chemical vapor deposition at a temperature within the range of 300° C. to 1000° C. for approximately 10 to 60 seconds.
Claim 22
Dependent Claim
19 words
A method for fabricating semiconductor wafers, according to claim 2, wherein said depositing comprises low pressure chemical vapor depositing.
Claim 23
Dependent Claim
17 words
A method for fabricating semiconductor wafers, according to claim 2, wherein said depositing comprises molecular beam epitaxy.
Claim 24
Dependent Claim
33 words
A method for fabricating semiconductor wafers, according to claim 2, wherein said depositing comprises at least one of rapid thermal processing chemical vapor deposition, low pressure chemical vapor depositing, and molecular beam epitaxy.
Claim 25
Independent Claim
215 words
A method for fabricating semiconductor wafers, comprising the steps of: a. providing a clean substrate in a chamber, said substrate being cleaned in HF, said substrate comprising at least one of single crystal silicon, polycrystalline silicon, and amorphous silicon; b. forming a first dielectric layer in situ superjacent said substrate by introducing a first gas and energy for generating a first temperature, said first dielectric layer having a first thickness; c. depositing a coating in situ superjacent said first dielectric layer, said coating comprising at least one of single crystal silicon, polycrystalline silicon, and amorphous silicon; d. transforming a portion of said coating into a second dielectric layer in situ, thereby creating a remainder of said coating subjacent said second dielectric layer; e. depositing a subsequent layer superjacent said second dielectric layer in situ, said subsequent layer comprising at least one of single crystal silicon, polycrystalline silicon and amorphous silicon; and f) forming at least one silicon dioxide layer, between said providing a substrate and said depositing a subsequent layer, said at least one silicon dioxide layer being formed by introducing a gas, comprising at least one of O 2 and N 2 O, and energy generating a temperature within the range of 850° C. to 1250° C. for approximately 5 seconds to 30 seconds.
Claim 26
Independent Claim
215 words
A method for fabricating semiconductor wafers, comprising the steps of: a. providing a clean substrate in a chamber, said substrate being cleaned in HF, said substrate comprising at least one of single crystal silicon, polycrystalline silicon, and amorphous silicon; b. forming a first dielectric layer in situ superjacent said substrate by introducing a first gas and energy for generating a first temperature, said first dielectric layer having a first thickness; c. depositing a coating in situ superjacent said first dielectric layer, said coating comprising at least one of single crystal silicon, polycrystalline silicon, and amorphous silicon; d. transforming a portion of said coating into a second dielectric layer in situ, thereby creating a remainder of said coating subjacent said second dielectric layer; e. depositing a subsequent layer superjacent said second dielectric layer in situ, said subsequent layer comprising at least one of single crystal silicon, polycrystalline silicon and amorphous silicon; and f) forming at least one silicon dioxide layer, between said providing a substrate and said depositing a subsequent layer, said at least one silicon dioxide layer being formed by introducing a gas, comprising at least one of O 2 and N 2 O, and energy generating a temperature within the range of 850° C. to 1250° C. for approximately 5 seconds to 30 seconds.
Claim 27
Dependent Claim
43 words
A method for fabricating semiconductor wafers, according to claim 23, wherein said transforming comprises the step of: introducing a gas comprising nitrogen and energy generating a second temperature within the range of 850° C. to 1150° C. for approximately 10 to 60 seconds.
Claim 28
Independent Claim
305 words
A method for fabricating semiconductor wafers, comprising the steps of: a. providing a clean substrate in a rapid thermal processing chamber, said substrate comprising at least one of single crystal silicon, polycrystalline silicon, or amorphous silicon, said substrate being cleaned in HF; b. forming a first silicon nitride layer in situ superjacent said substrate by introducing a gas comprising nitrogen and energy generating a temperature within the range of 850° C. to 1150° C. for approximately 10 to 60 seconds, said first layer having a first thickness in the approximate range of 5 Å to 30 Å; c. depositing a film superjacent said first silicon nitride layer in situ by means of rapid thermal processing chemical vapor deposition at a temperature substantially within the range of 300° C. to 1000° C. for approximately 10 to 60 seconds, said film comprising at least one of single crystal silicon, polycrystalline silicon, and amorphous silicon, said film having a second thickness in the approximate range of 10 Å to 40 Å; d. transforming said film into a second silicon nitride layer in situ by introducing a gas comprising nitrogen and energy generating a temperature substantially within the range of 850° C. to 1150° C. applied for approximately 10 to 60 seconds, said silicon nitride layer having a third thickness similar to said second thickness; and e. depositing a single crystal silicon, polycrystalline silicon, or amorphous silicon coating superjacent said second silicon nitride layer in situ; and forming at least one silicon dioxide layer, between said providing a substrate and said depositing said coating, said at least one silicon dioxide layer being formed by introducing a gas, comprising at least one of O 2 and N 2 O, and energy generating a temperature within the range of 850° C. to 1250° C. for approximately 5 seconds to 30 seconds.
Claim 29
Independent Claim
305 words
A method for fabricating semiconductor wafers, comprising the steps of: a. providing a clean substrate in a rapid thermal processing chamber, said substrate comprising at least one of single crystal silicon, polycrystalline silicon, or amorphous silicon, said substrate being cleaned in HF; b. forming a first silicon nitride layer in situ superjacent said substrate by introducing a gas comprising nitrogen and energy generating a temperature within the range of 850° C. to 1150° C. for approximately 10 to 60 seconds, said first layer having a first thickness in the approximate range of 5 Å to 30 Å; c. depositing a film superjacent said first silicon nitride layer in situ by means of rapid thermal processing chemical vapor deposition at a temperature substantially within the range of 300° C. to 1000° C. for approximately 10 to 60 seconds, said film comprising at least one of single crystal silicon, polycrystalline silicon, and amorphous silicon, said film having a second thickness in the approximate range of 10 Å to 40 Å; d. transforming said film into a second silicon nitride layer in situ by introducing a gas comprising nitrogen and energy generating a temperature substantially within the range of 850° C. to 1150° C. applied for approximately 10 to 60 seconds, said silicon nitride layer having a third thickness similar to said second thickness; and e. depositing a single crystal silicon, polycrystalline silicon, or amorphous silicon coating superjacent said second silicon nitride layer in situ; and forming at least one silicon dioxide layer, between said providing a substrate and said depositing said coating, said at least one silicon dioxide layer being formed by introducing a gas, comprising at least one of O 2 and N 2 O, and energy generating a temperature within the range of 850° C. to 1250° C. for approximately 5 seconds to 30 seconds.
References Cited (Backward Citations)
US4435447A
Cited
US4277320A
Cited
US4996081A
Cited
US5173152A
Cited
US5250452A
Cited
US5032545A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-26 | 1998-06-27 | 1998-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-26 | 2002-06-27 | 2002-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-26 | 2006-06-27 | 2006-12-27 | $7700.00 | Window Closed / Lapsed |