Patent US5372295A successfully refreshed from Google Patents.
US5372295A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solder material, junctioning method, junction material, and semiconductor device
Assignee: Renesas Semiconductor Engineering Corp
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Filing: 1992-10-01
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Granted: 1994-12-13
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Expires: 2012-10-01
Abstract
Abstract A solder material comprises a first solder plate and a second solder plate having a thickness equal to or larger than 1 micron provided at the both surfaces of the first solder plate comprising material having a lower melting point than the first solder or material which reacts with the first solder to produce an alloy having a lower melting point than the first solder. A junctioning method comprises putting the above-described solder material inserted between two objects to be junctioned to each other; heating the solder material to a temperature higher than the melting point of the second solder or the alloy and lower than the melting point of said first solder thereby to melt the second solder or the alloy; and thereafter cooling or keeping the solder material at a temperature in the vicinity of the melting point thereby to junction the objects to be junctioned to each other. The second solder plate has preferably a thickness less than 5 microns and the first solder plate has preferably a thickness equal to or larger than 30 microns. By this construction, the interval between the objects to be junctioned can be controlled to a predetermined thickness and the stress functioning to the objects can be relaxed as well as there arises no positional deviation between the objects.
Inventors
- 👤 Shunichi Abe
- 👤 Katunori Asai
- 👤 Yoshihiro Tomita
- 👤 Hideyuki Ichiyama
- 👤 Seizou Ohumae
- 👤 Yoshirou Nishinaka
- 👤 Katsuyuki Fukutome
- 👤 Naoto Ueda
- 👤 Toshio Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 13:35
CPC Classifications
B; B23; B23K; B23K35/00; B23K35/22; B23K35/24; B23K35/26; B23K35/268; B23K35/02; B23K35/0222; B23K35/0233; B23K35/0238; B23K35/262; H; H10; H10W; H10W72/00; H10W72/01; H10W72/013; H10W72/01308; H10W72/071; H10W72/073; H10W72/07311; H10W72/07331; H10W72/07336; H10W72/07351; H10W72/07355; H10W72/30; H10W72/321; H10W72/325; H10W72/331; H10W72/351; H10W72/352; H10W72/381; H10W72/387; H10W72/50; H10W72/59; H10W90/00; H10W90/701; H10W90/731; H10W90/736
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
59 words
A junction material used for junctioning a semiconductor chip to a substrate material, comprising: a high melting point junction material layer; a pair of low melting point junction material layers provided at the both surfaces of said high melting point junction material layer, respectively, and said high melting point junction material layer being porous, having continuous spaces inside thereof.
Claim 2
Dependent Claim
59 words
A junction material used for junctioning a semiconductor chip to a substrate material, comprising: a high melting point junction material layer; a pair of low melting point junction material layers provided at the both surfaces of said high melting point junction material layer, respectively, and said high melting point junction material layer being porous, having continuous spaces inside thereof.
Claim 3
Dependent Claim
36 words
The junction material as recited in claim 1, said high melting point junction material layer having a front surface and a rear surface and having spaces continuously provided from its front surface to its rear surface.
Claim 4
Dependent Claim
47 words
A junction material for junctioning a semiconductor chip to a substrate material, comprising: a porous high melting point junction material layer having continuous spaces inside thereof; and low melting point junction materials filled up with in said continuous spaces in said high melting point junction material layer.
Claim 5
Dependent Claim
47 words
A junction material for junctioning a semiconductor chip to a substrate material, comprising: a porous high melting point junction material layer having continuous spaces inside thereof; and low melting point junction materials filled up with in said continuous spaces in said high melting point junction material layer.
Claim 6
Dependent Claim
36 words
The junction material as recited in claim 3, said high melting point junction material layer having a front surface and a rear surface and having spaces continuously provided from its front surface to its rear surface.
Claim 7
Dependent Claim
75 words
A junction material used for junctioning a semiconductor chip to a substrate material, comprising: a high melting point junction material layer and a low melting point junction material layer having a melt point less than 200° C.; and said both junction material layers laminated alternatively each in plural layers arranged in a direction vertical to the direction of junctioning between the rear surface of said semiconductor chip and the front surface of said substrate material.
Claim 8
Dependent Claim
75 words
A junction material used for junctioning a semiconductor chip to a substrate material, comprising: a high melting point junction material layer and a low melting point junction material layer having a melt point less than 200° C.; and said both junction material layers laminated alternatively each in plural layers arranged in a direction vertical to the direction of junctioning between the rear surface of said semiconductor chip and the front surface of said substrate material.
Claim 9
Dependent Claim
55 words
A junction material used for junctioning a semiconductor chip to a substrate material, comprising: a high melting point junction material layer having throughholes provided therein; and low melting point junction materials provided inside said throughholes and being selected so as to coat at least one side of said high melting point junction layer when melted.
Claim 10
Dependent Claim
55 words
A junction material used for junctioning a semiconductor chip to a substrate material, comprising: a high melting point junction material layer having throughholes provided therein; and low melting point junction materials provided inside said throughholes and being selected so as to coat at least one side of said high melting point junction layer when melted.
Claim 11
Dependent Claim
19 words
The junction material as recited in claim 6, wherein said high melting point junction material layer is sheet shaped.
Claim 12
Dependent Claim
20 words
The junction material as recited in claim 6, wherein sphere-shaped low melting point junction materials are provided inside said throughholes.
Claim 13
Dependent Claim
55 words
A junction material used for junctioning a semiconductor chip to a substrate material, comprising: a high melting point junction material layer and low melting point junction materials and, said low melting point junction materials buried in grooves produced in mesh configurations at the front and rear surfaces of said high melting point junction material layer.
Claim 14
Dependent Claim
55 words
A junction material used for junctioning a semiconductor chip to a substrate material, comprising: a high melting point junction material layer and low melting point junction materials and, said low melting point junction materials buried in grooves produced in mesh configurations at the front and rear surfaces of said high melting point junction material layer.
Claim 15
Dependent Claim
134 words
A junctioning method for junctioning a semiconductor chip to a substrate material, comprising: inserting a high melting point junction material layer between said semiconductor chip and said substrate material; supplying liquid comprising volatile solvent including minute low melting point junction material particles between the rear surface of said semiconductor chip and the front surface of said high melting point junction material layer and between the rear surface of said high melting point junction material layer and the front surface of said substrate material thereby to make said liquid broaden to around; and heating the whole of them to a temperature lower than the melting point of said high melting point junction material layer to melt said low melting point junction material to make the same diffuse into said high melting point junction material layer.
Claim 16
Dependent Claim
134 words
A junctioning method for junctioning a semiconductor chip to a substrate material, comprising: inserting a high melting point junction material layer between said semiconductor chip and said substrate material; supplying liquid comprising volatile solvent including minute low melting point junction material particles between the rear surface of said semiconductor chip and the front surface of said high melting point junction material layer and between the rear surface of said high melting point junction material layer and the front surface of said substrate material thereby to make said liquid broaden to around; and heating the whole of them to a temperature lower than the melting point of said high melting point junction material layer to melt said low melting point junction material to make the same diffuse into said high melting point junction material layer.
Claim 17
Dependent Claim
23 words
The junctioning method as recited in claim 10, wherein said heating step is carried out so as to completely evaporate said volatile solvent.
Claim 18
Dependent Claim
62 words
A substrate material for a semiconductor device, including: a peripheral projecting part provided on said substrate material surrounding a predetermined area within which a semiconductor chip is solder bonded to said substrate, which peripheral part is constructed so as to separate solder forming a bond between said chip and said predetermined area from excess solder flowing from said bond during bond formation.
Claim 19
Dependent Claim
62 words
A substrate material for a semiconductor device, including: a peripheral projecting part provided on said substrate material surrounding a predetermined area within which a semiconductor chip is solder bonded to said substrate, which peripheral part is constructed so as to separate solder forming a bond between said chip and said predetermined area from excess solder flowing from said bond during bond formation.
Claim 20
Dependent Claim
95 words
A substrate material for a semiconductor device as defined in claim 12, wherein said semiconductor device comprises a semiconductor chip die-bonded to said substrate material by using a solder material having a high melting point solder plate and a pair of low melting point solder materials arranged at both sides of said high melting point solder material, said solder material being heated to a temperature higher than the melting point of said low melting point solder and lower than the melting point of said high melting point solder to bond said chip to said substrate.
Claim 21
Dependent Claim
143 words
A semiconductor device comprising: a semiconductor chip; a substrate material; a solder material of triple layer structure comprising a high melting point solder plate produced as a mother material and a pair of low melting point solder plates provided at the both surfaces of said high melting point solder plate; said solder material being heated at a temperature higher than the melting point of said low melting point solder and lower than the melting point of said high melting point solder; a groove provided on said substrate material surrounding the four edges of said solder material of triple layer structure; excess low melting point solder which has flown out from the side surface of said low melting point solder due to the die-bonding load, flown into said groove part to enable separation of the same from the side surface of said solder material.
Claim 22
Dependent Claim
143 words
A semiconductor device comprising: a semiconductor chip; a substrate material; a solder material of triple layer structure comprising a high melting point solder plate produced as a mother material and a pair of low melting point solder plates provided at the both surfaces of said high melting point solder plate; said solder material being heated at a temperature higher than the melting point of said low melting point solder and lower than the melting point of said high melting point solder; a groove provided on said substrate material surrounding the four edges of said solder material of triple layer structure; excess low melting point solder which has flown out from the side surface of said low melting point solder due to the die-bonding load, flown into said groove part to enable separation of the same from the side surface of said solder material.
Claim 23
Dependent Claim
62 words
A substrate material for a semiconductor device, including: a groove provided on said substrate material surrounding a predetermined area within which a semiconductor chip is designed to be solder bonded to said substrate, which groove is constructed so as to receive excess solder flowing from said predetermined area during solder bonding and to keep said excess solder separated from said predetermined area.
Claim 24
Dependent Claim
62 words
A substrate material for a semiconductor device, including: a groove provided on said substrate material surrounding a predetermined area within which a semiconductor chip is designed to be solder bonded to said substrate, which groove is constructed so as to receive excess solder flowing from said predetermined area during solder bonding and to keep said excess solder separated from said predetermined area.
Claim 25
Dependent Claim
93 words
A substrate material for a semiconductor device as defined in claim 15, wherein said semiconductor device comprises a semiconductor chip, said substrate material, and a solder material comprising a high melting point solder plate and a pair of low melting point solders provided at both surfaces of said high melting point solder plate, said solder material being heated to a temperature higher than the melting point of said low melting point solder and lower than the melting point of said high melting point solder to solder said semiconductor chip to said substrate material.
Claim 26
Dependent Claim
130 words
A junctioning method comprising: die-bonding a semiconductor chip onto a substrate material inserting therebetween a solder material of triple layer structure comprising a high melting point solder plate provided as a mother material and a pair of low melting point solder plates provided at the both sides of said high melting point solder plate, respectively, said solder material being heated to a temperature higher than the melting point of said low melting point solder and higher than the melting point of said high melting point solder; and excess low melting point solder which has flown out to the outside from the side surface of said solder due to the die-bonding load, being oxidated at said die-bonding, thereby making said flown out solder solidified due to having a raised melting point.
Claim 27
Dependent Claim
130 words
A junctioning method comprising: die-bonding a semiconductor chip onto a substrate material inserting therebetween a solder material of triple layer structure comprising a high melting point solder plate provided as a mother material and a pair of low melting point solder plates provided at the both sides of said high melting point solder plate, respectively, said solder material being heated to a temperature higher than the melting point of said low melting point solder and higher than the melting point of said high melting point solder; and excess low melting point solder which has flown out to the outside from the side surface of said solder due to the die-bonding load, being oxidated at said die-bonding, thereby making said flown out solder solidified due to having a raised melting point.
Claim 28
Dependent Claim
96 words
A junction material used for junctioning a semiconductor chip to a substrate material, comprising: high melting point junction material layers and low melting point junction material layers laminated alternatively in a direction vertical to the direction of junctioning between a surface of said semiconductor chip and a surface of said substrate material, wherein at least one of said high melting point junction material layers or said low melting point junction material layers comprises an alloy comprising at least two metals selected from the group consisting of lead, indium, tin, gold, nickel, cobalt, silver, and combinations thereof.
Claim 29
Dependent Claim
96 words
A junction material used for junctioning a semiconductor chip to a substrate material, comprising: high melting point junction material layers and low melting point junction material layers laminated alternatively in a direction vertical to the direction of junctioning between a surface of said semiconductor chip and a surface of said substrate material, wherein at least one of said high melting point junction material layers or said low melting point junction material layers comprises an alloy comprising at least two metals selected from the group consisting of lead, indium, tin, gold, nickel, cobalt, silver, and combinations thereof.
Claim 30
Dependent Claim
32 words
A junction material as defined in claim 18, wherein said high melting point junction material layers and said low melting point junction material layers each comprise an alloy of lead and tin.
Claim 31
Dependent Claim
54 words
A junction material as defined in claim 19, wherein said high melting point junction material layers comprise an alloy of about 95% by weight lead and about 5% by weight tin, and said low melting point junction material layers comprise an alloy of about 63% by weight tin and about 37% by weight lead.
Claim 32
Dependent Claim
30 words
A junction material as defined in claim 18, wherein said high melting point junction material layers comprise tin and said low melting point junction material layers comprise a lead/tin alloy.
Claim 33
Dependent Claim
31 words
A junction material as defined in claim 21, wherein said low melting point junction material layers comprise an alloy of about 95% by weight lead and about 5% by weight tin.
Claim 34
Dependent Claim
140 words
A semiconductor device comprising; a semiconductor chip; a substrate material; solder material of triple layer structure comprising a high melting point solder plate and a pair of low melting point solder plates arranged at the both sides of said high melting point solder plate; said solder material heated to a temperature higher than the melting point of said low melting point solder plate and the melting point of said high melting point solder material; said substrate material having a peripheral projecting part provided surrounding the four edges of solder material of said triple layer structure on said substrate; and excess low melting point solder which has flown out to the outside of said peripheral projecting part from the side surface of said low melting point solder due to the die-bonding load, being separated from said side surface of said solder.
Claim 35
Dependent Claim
140 words
A semiconductor device comprising; a semiconductor chip; a substrate material; solder material of triple layer structure comprising a high melting point solder plate and a pair of low melting point solder plates arranged at the both sides of said high melting point solder plate; said solder material heated to a temperature higher than the melting point of said low melting point solder plate and the melting point of said high melting point solder material; said substrate material having a peripheral projecting part provided surrounding the four edges of solder material of said triple layer structure on said substrate; and excess low melting point solder which has flown out to the outside of said peripheral projecting part from the side surface of said low melting point solder due to the die-bonding load, being separated from said side surface of said solder.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-12 | 1998-06-13 | 1998-12-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-12 | 2002-06-13 | 2002-12-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-12 | 2006-06-13 | 2006-12-13 | $7700.00 | Window Closed / Lapsed |