Method and connecting material for the metallic joining of parts

Claim 2

Method for the metallic joining of component parts which are formed of semiconductor components with metallization on a surface, metallic components or metallic substrates, which comprises: (a) arranging component parts with their metallic surfaces to be joined facing each other, (b) inserting between the metallic surfaces to be joined a composite multilayer material of at least three layers, with a core layer formed solely from a metallic foil made of lead, with a thickness of 20 to 60 μm and coated on both sides with a surface layer of tin with a thickness between 0.5 and 2 μm forming a lower melting eutectic with the internal layer surface, and (c) joining the component parts with the inserted composite multilayer material at a temperature of 180° C. to 350° C. to effect melting of the surface layers of the compsite multilayer material directly facing the metallic surfaces to be joined without melting or only melting the rim of the interior layer of the composite multilayer material.

Claim 5

Method for the metallic joining of component parts which are formed of semiconductor components with metallization on a surface, metallic components or metallic substrates, which comprises: (a) arranging component parts with their metallic surfaces to be joined facing each other, (b) inserting between the metallic surfaces to be joined a composite multilayer material of at least three layers, with a core layer formed solely from a metallic foil made of an alloy of antimony with silver with a thickness of 20 to 60 μm and coated on both sides with a surface layer of tin with a thickness between 0.5 and 2 μm forming a lower melting eutectic with the internal layer surface, and (c) joining the component parts with the inserted composite multilayer material at a temperature of 180° C. to 350° C. to effect melting of the surface layers of the composite multilayer material directly facing the metallic surfaces to be joined without melting or only melting the rim of the interior layer of the composite multilayer material.

Claim 6

Method for the metallic joining of component parts which are formed of semiconductor components with metallization on a surface, metallic components or metallic substrates, which comprises: (a) arranging component parts with their metallic surfaces to be joined facing each other, (b) inserting between the metallic surfaces to be joined a composite multilayer material of at least three layers, with a core layer formed solely from a metallic foil made of an alloy of antimony with silver with a thickness of 20 to 60 μm and coated on both sides with a surface layer of tin with a thickness between 0.5 and 2 μm forming a lower melting eutectic with the internal layer surface, and (c) joining the component parts with the inserted composite multilayer material at a temperature of 180° C. to 350° C. to effect melting of the surface layers of the composite multilayer material directly facing the metallic surfaces to be joined without melting or only melting the rim of the interior layer of the composite multilayer material.

Claim 7

Method for the metallic joining of component parts which are formed of semiconductor components with metallization on a surface, metallic components or metallic substrates, which comprises: (a) arranging components part with their metallic surfaces to be joined facing each other, (b) inserting between the metallic surfaces to be joined a composite multilayer material of at least three layers, with a core layer formed solely from a metallic foil made of an alloy of tin and antimony with silver with a thickness of 20 to 60 μm and coated on both sides with a surface layer of tin with a thickness between 0.5 and 2 μm forming a lower melting eutectic with the internal layer surface, and (c) joining the component parts with the inserted composite multilayer material at a temperature of 180° C. to 350° C. to effect melting of the surface layers of the compsite multilayer material directly facing the metallic surfaces to be joined without melting or only melting the rim of the interior layer of the composite multilayer material.

Claim 8

Method for the metallic joining of component parts which are formed of semiconductor components with metallization on a surface, metallic components or metallic substrates, which comprises: (a) arranging components part with their metallic surfaces to be joined facing each other, (b) inserting between the metallic surfaces to be joined a composite multilayer material of at least three layers, with a core layer formed solely from a metallic foil made of an alloy of tin and antimony with silver with a thickness of 20 to 60 μm and coated on both sides with a surface layer of tin with a thickness between 0.5 and 2 μm forming a lower melting eutectic with the internal layer surface, and (c) joining the component parts with the inserted composite multilayer material at a temperature of 180° C. to 350° C. to effect melting of the surface layers of the compsite multilayer material directly facing the metallic surfaces to be joined without melting or only melting the rim of the interior layer of the composite multilayer material.

Claim 9

Method for the metallic joining of component parts which are formed of semiconductor components with a metallization which is formed by an alloy of aluminum-chromium-nickel-silver or a nickel-silver alloy on a surface, metallic components or metallic substrates of molybdenum, which comprises: (a) arranging component parts with their metallic surfaces to be joined facing each other, (b) inserting between the metallic surfaces to be joined a composite multilayer material of at least three layers, with a core layer formed solely from a metallic foil made of lead, with a thickness of 20 to 60 μm and coated on both sides with a surface layer of tin with a thickness between 0.5 and 2 μm forming a lower melting eutectic with the internal layer surface, and (c) joining the component parts with the inserted composite multilayer material at a temperature of 180° C. to 350° C. to effect melting of the surface layers of the composite multilayer material directly facing the metallic surfaces to be joined without melting or only melting the rim of the interior layer of the composite multilayer material.

Claim 10

Method for the metallic joining of component parts which are formed of semiconductor components with a metallization which is formed by an alloy of aluminum-chromium-nickel-silver or a nickel-silver alloy on a surface, metallic components or metallic substrates of molybdenum, which comprises: (a) arranging component parts with their metallic surfaces to be joined facing each other, (b) inserting between the metallic surfaces to be joined a composite multilayer material of at least three layers, with a core layer formed solely from a metallic foil made of lead, with a thickness of 20 to 60 μm and coated on both sides with a surface layer of tin with a thickness between 0.5 and 2 μm forming a lower melting eutectic with the internal layer surface, and (c) joining the component parts with the inserted composite multilayer material at a temperature of 180° C. to 350° C. to effect melting of the surface layers of the composite multilayer material directly facing the metallic surfaces to be joined without melting or only melting the rim of the interior layer of the composite multilayer material.