Abstract 930,352. Semi-conductor devices. SIEMENS & HALSKE A.G. Nov. 16, 1961 [Nov. 16, 1960], No. 41021/61. Class 37. A contact member is soldered to an electrode of a semi-conductor device by means of a sandwich of a soft metal between layers of wetting material, the sandwich being assembled between the contact member and the electrode and the assembly being heated at least as much as is necessary to melt the wetting material. A soft metal is defined as one which is softer than that of the electrode or the contact member and a wetting material is defined as one with a melting-point less than that of the electrode, the contact member, or the soft metal. The wetting material may be rolled on to the soft metal before the sandwich is assembled between the contact member and the electrode. As shown in Fig. 2, the invention is applied to a transistor with an aluminium base 8 and a gold/ antimony emitter 7 on a semi-conductor body 6 of P-type silicon. The collector electrode 12 is of gold and is soldered to an iron heat sink 14 by means of the sandwich 2, 3, 4, of lead between layers of indium. Soldering is effected by heating the assembly to 160‹ C. in a protective gas atmosphere. The transistor is hermetically sealed in a cap 9 on the iron plate 14.
IN THE ART OF MAKING A SEMICONDUCTOR DEVICE HAVING AN ELECTRODE AND A CONTACT MEMBER, THE METHOD OF CONNECTING SAID ELECTRODE IN LARGE AREA CONTACT WITH SAID CONTACT MEMBER, COMPRISING PLACING BETWEEN SAID ELECTRODE AND SAID CONTACT MEMBER A LAYER OF LEAD TO FORM A GOOD HEAT CONDUCTOR AND PROVIDED WITH INDIUM AS A WETTING SUBSTANCE AT LEAST AT THE PARTS OF THE SURFACE THEREOF FACING THE RESPECTIVE CONTACT MEMBER AND THE ELECTRODE, AND HEATING THE ASSEMBLY TO A TEMPERATURE LYING ABOVE THE MELTING POINT OF THE INDIUM TO THEREBY FIRMLY BOND SAID LAYER TO THE ELECTRODE AND TO SAID CONTACT MEMBER.
Claim 2
Dependent Claim
102 words
IN THE ART OF MAKING A SEMICONDUCTOR DEVICE HAVING AN ELECTRODE AND A CONTACT MEMBER, THE METHOD OF CONNECTING SAID ELECTRODE IN LARGE AREA CONTACT WITH SAID CONTACT MEMBER, COMPRISING PLACING BETWEEN SAID ELECTRODE AND SAID CONTACT MEMBER A LAYER OF LEAD TO FORM A GOOD HEAT CONDUCTOR AND PROVIDED WITH INDIUM AS A WETTING SUBSTANCE AT LEAST AT THE PARTS OF THE SURFACE THEREOF FACING THE RESPECTIVE CONTACT MEMBER AND THE ELECTRODE, AND HEATING THE ASSEMBLY TO A TEMPERATURE LYING ABOVE THE MELTING POINT OF THE INDIUM TO THEREBY FIRMLY BOND SAID LAYER TO THE ELECTRODE AND TO SAID CONTACT MEMBER.