Semiconductor device having a ferroelectric film in a through-hole

Claim 2

A semiconductor device comprising: a substrate with a diffusion region; a first insulating film located adjacent to said diffusion region; a first wiring layer located over said first insulating film; a lower electrode located over said first wiring layer and directly above said first insulating film; a second insulating film located over said first wiring layer and said lower electrode; a through-hole in said second insulating film extending to said lower electrode, and located directly above said first insulating film; a dielectric, comprising a ferroelectric material, embedded in said through-hole and disposed directly above said lower electrode and said first insulating film; and an upper electrode located directly above said dielectric and said first insulating film wherein said dielectric is at least equal to a thickness of said second insulating film.

Claim 3

A semiconductor device comprising: a substrate with a diffusion region; a first insulating film located adjacent to said diffusion region; a first wiring layer located over said first insulating film; a lower electrode located over said first wiring layer and directly above said first insulating film; a second insulating film located over said first wiring layer and said lower electrode; a through-hole in said second insulating film extending to said lower electrode, and located directly above said first insulating film; a dielectric, comprising a ferroelectric material, embedded in said through-hole and disposed directly above said lower electrode and said first insulating film; an upper electrode located directly above said dielectric and said first insulating film; another insulating film disposed over said diffusion region and said first insulating film; and another through-hole formed in said another insulating film wherein said another through-hole is disposed over and extends to said diffusion region such that said first wiring layer contacts said diffusion region via said another through-hole.

Claim 4

A semiconductor device comprising: a substrate with a diffusion region; a first insulating film located adjacent to said diffusion region; a first wiring layer located over said first insulating film; a lower electrode located over said first wiring layer and directly above said first insulating film; a second insulating film located over said first wiring layer and said lower electrode; a through-hole in said second insulating film extending to said lower electrode, and located directly above said first insulating film; a dielectric, comprising a ferroelectric material, embedded in said through-hole and disposed directly above said lower electrode and said first insulating film; an upper electrode located directly above said dielectric and said first insulating film; another insulating film disposed over said diffusion region and said first insulating film; and another through-hole formed in said another insulating film wherein said another through-hole is disposed over and extends to said diffusion region such that said first wiring layer contacts said diffusion region via said another through-hole.

Claim 5

The device of claim 1 wherein said lower electrode is comprised of an element selected from the group comprising Pt and Pd and has a thickness of approximately 1000 Å.

Claim 6

The device of claim 1 wherein said ferroelectric material comprises PbTiO 3 and has a thickness of approximately 6000 Å.

Claim 7

The device of claim 1 wherein said upper electrode is comprised of an element selected from the group comprising Pt and Pb and has an approximate thickness of 6000 Å.

Claim 8

The device of claim 1 further comprising a second wiring layer disposed at least over said upper electrode.

Claim 9

The device of claim 1 further comprising a second wiring layer located over said upper electrode and a passivation film located over said device.

Claim 10

A semiconductor device comprising: a substrate with a diffusion region; a first insulating film located adjacent to said diffusion region; a first wiring layer located over said first insulating film; a lower electrode located over said first wiring layer and directly above said first insulating film; a second insulating film located over said first wiring layer and said lower electrode; a through-hole in said second insulating film extending to said lower electrode, and located directly above said first insulating film; a dielectric, comprising a ferroelectric material, embedded in said through-hole and disposed directly above said lower electrode and said first insulating film; an upper electrode located directly above said dielectric and said first insulating film; another insulating film disposed over said diffusion region and said first insulating film; another through-hole formed in said another insulating film wherein said another through-hole is disposed over and extends to said diffusion region such that said first wiring layer contacts said diffusion region via said another through-hole; and a second wiring layer located over said upper electrode and a portion of said another insulating layer and a passivation film located over said device.

Claim 11

A semiconductor device comprising: a substrate with a diffusion region; a first insulating film located adjacent to said diffusion region; a first wiring layer located over said first insulating film; a lower electrode located over said first wiring layer and directly above said first insulating film; a second insulating film located over said first wiring layer and said lower electrode; a through-hole in said second insulating film extending to said lower electrode, and located directly above said first insulating film; a dielectric, comprising a ferroelectric material, embedded in said through-hole and disposed directly above said lower electrode and said first insulating film; an upper electrode located directly above said dielectric and said first insulating film; another insulating film disposed over said diffusion region and said first insulating film; another through-hole formed in said another insulating film wherein said another through-hole is disposed over and extends to said diffusion region such that said first wiring layer contacts said diffusion region via said another through-hole; and a second wiring layer located over said upper electrode and a portion of said another insulating layer and a passivation film located over said device.

Claim 12

The device of claim 2 wherein said ferroelectric material comprises PbTiO 3 and has a thickness of approximately 6000 Å.

Claim 13

The device of claim 2 wherein said lower electrode is comprised of an element selected from the group comprising Pt and Pd and has a thickness of approximately 1000 Å.

Claim 14

The device of claim 2 wherein said upper electrode is comprised of an element selected from the group comprising Pt and Pb and has an approximate thickness of 6000 Å.

Claim 15

The device of claim 2 further comprising a second wiring layer disposed at least over said upper electrode.

Claim 16

The device of claim 2 further comprising a second wiring layer located over said upper electrode and a passivation film located over said device.

Claim 17

The device of claim 8 wherein said lower electrode is comprised of an element selected from the group comprising Pt and Pd and has a thickness of approximately 1000 Å.

Claim 18

The device of claim 8 wherein said ferroelectric material comprises PbTiO 3 and has a thickness of approximately 6000 Å.

Claim 19

The device of claim 8 wherein said upper electrode is comprised of an element selected from the group comprising Pt and Pb and has an approximate thickness of 6000 Å.