Patent US5366918A successfully refreshed from Google Patents.
US5366918A
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Method for fabricating a split polysilicon SRAM cell
Assignee: United Microelectronics Corp
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Filing: 1994-02-07
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Granted: 1994-11-22
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Expires: 2014-02-07
Abstract
Abstract An SRAM semiconductor device comprises a first layer, a second layer and a third layer of polysilicon are separated by dielectric layers formed on a substrate, and a split gate structure with transistors formed in different polysilicon levels. Preferably, the split gate structure includes pull down transistors and pass gate transistors formed in different polysilicon levels; the second polysilicon layer extends into contact with the substrate; the second polysilicon layer contacts the third polysilicon layer in an interconnection region; and the third polysilicon layer comprises a polysilicon load resistor.
Inventors
- 👤 Ming-Tzong Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:35
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10B10/125; H10B10/15; Y; Y10; Y10S; Y10S257/00; Y10S257/90; Y10S257/903; Y10S257/904
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
309 words
A method of fabrication of an semiconductor device comprising a) applying a first dielectric layer to a silicon substrate, b) forming a first polysilicon layer on said first dielectric layer, c) applying a second dielectric layer to said first polysilicon layer, d) forming a first polysilicon masking layer on the surface of said substrate, e) etching said first polysilicon layer and said second dielectric layer through openings in said first masking layer, f) forming a third dielectric layer over the remaining portions of said first polysilicon layer, and then performing a spacer etch for forming a fourth dielectric layer, g) forming a buried contact masking layer on the surface of said device, h) etching said first dielectric layer down to form buried contact openings to said substrate for a buried contact through openings in said first buried contact masking layer, forming a second polysilicon layer on said device extending down into said buried contact openings into contact with said substrate, j) forming a fifth dielectric layer over said second polysilicon layer, k) forming a second polysilicon masking layer on the surface of said substrate, l) etching said second polysilicon layer and said fifth dielectric layer through openings in said second polysilicon masking layer, m) forming a sixth dielectric layer over the remaining portions of said second polysilicon layer, n) implanting dopant ions of a source/drain mask through a source drain mask in regions in said substrate, o) forming a seventh dielectric layer over the entire exposed surfaces, p) forming via openings in said seventh dielectric layer down to said second polysilicon layer, q) forming a third polysilicon layer on said device extending down into said via openings, r) forming a third polysilicon masking layer on the surface of said third polysilicon layer, and s) etching said third polysilicon layer to form a configuration through said third polysilicon masking layer.
Claim 2
Independent Claim
309 words
A method of fabrication of an semiconductor device comprising a) applying a first dielectric layer to a silicon substrate, b) forming a first polysilicon layer on said first dielectric layer, c) applying a second dielectric layer to said first polysilicon layer, d) forming a first polysilicon masking layer on the surface of said substrate, e) etching said first polysilicon layer and said second dielectric layer through openings in said first masking layer, f) forming a third dielectric layer over the remaining portions of said first polysilicon layer, and then performing a spacer etch for forming a fourth dielectric layer, g) forming a buried contact masking layer on the surface of said device, h) etching said first dielectric layer down to form buried contact openings to said substrate for a buried contact through openings in said first buried contact masking layer, forming a second polysilicon layer on said device extending down into said buried contact openings into contact with said substrate, j) forming a fifth dielectric layer over said second polysilicon layer, k) forming a second polysilicon masking layer on the surface of said substrate, l) etching said second polysilicon layer and said fifth dielectric layer through openings in said second polysilicon masking layer, m) forming a sixth dielectric layer over the remaining portions of said second polysilicon layer, n) implanting dopant ions of a source/drain mask through a source drain mask in regions in said substrate, o) forming a seventh dielectric layer over the entire exposed surfaces, p) forming via openings in said seventh dielectric layer down to said second polysilicon layer, q) forming a third polysilicon layer on said device extending down into said via openings, r) forming a third polysilicon masking layer on the surface of said third polysilicon layer, and s) etching said third polysilicon layer to form a configuration through said third polysilicon masking layer.
Claim 3
Dependent Claim
17 words
A method in accordance with claim 1 wherein said first dielectric layer comprises a gate oxide layer.
Claim 4
Dependent Claim
22 words
A method in accordance with claim 1 wherein said second dielectric layer comprises a silicon dioxide layer applied by chemical vapor deposition.
Claim 5
Dependent Claim
17 words
A method in accordance with claim 1 wherein said third dielectric layer comprises a silicon dioxide layer.
Claim 6
Dependent Claim
18 words
A method in accordance with claim 1 wherein said fourth dielectric layer comprises a second gate oxide layer.
Claim 7
Independent Claim
22 words
A method in accordance with claim i wherein said fifth dielectric layer comprises a silicon dioxide layer applied by chemical vapor deposition.
Claim 8
Dependent Claim
17 words
A method in accordance with claim 1 wherein said sixth dielectric layer comprises a silicon dioxide layer.
Claim 9
Dependent Claim
18 words
A method in accordance with claim 1 wherein said seventh dielectric layer comprises a third gate oxide layer.
Claim 10
Dependent Claim
13 words
The method of claim 1 wherein an SRAM is formed by the method.
Claim 11
Dependent Claim
24 words
The method of claim 9 wherein said third polysilicon layer is the gate electrode layer of a thin film transistor used in said SRAM.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2001-11-21 | 2002-05-23 | 2002-11-22 | $3760.00 | Window Closed / Lapsed |
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