Lateral complementary heterojunction bipolar transistor and processing procedure

Abstract

Abstract A method of fabricating a heterojunction bipolar transistor and the transistor by providing a substrate of a group III-V semiconductor material, doping a first selected region at a surface of the substrate a predetermined first conductivity type, concurrently or separately incorporating a group III element into a portion of the first selected region, doping the portion of the first selected region to a second conductivity type with a laser beam to cause melting and subsequent recrystallization of said substrate and forming contacts to the portion of the first selected region and to the first selected region. The portion of the first selected region extends farther into the substrate than the remainder of the first selected region. A complementary transistor can be concurrently fabricated using the same steps except that p-implants replace the n-implants and n-doped InGaAs instead of p-doped InGaAs forms the base layer. Complementary devices on the same wafer are provided relatively easily using selective implants and two separate InGaAs recrystallizations, one for a p-type base and the other for an n-type base. The fabrication of the pnp HBT entails masking of the npn HBT while performing operations unique to the pnp HBT and masking of the pnp HBT while performing operations unique to the npn HBT as is well known. Any complementary HBT circuit may then be realized.

Inventors

• 👤 Timothy S. Henderson
• 👤 Donald L. Plumton
• 👤 Han-Tzong Yuang

Bibliographic Details