Method for manufacturing a bipolar semiconductor device

Claim 1

A method for manufacturing a semiconductor device using silicon microcrystal, comprising the step of: depositing a first conductive-type silicon microcrystal layer on a second conductive-type silicon substrate at a growth velocity of 15 Å/sec or more by a plasma chemical vapor deposition method in a state that the temperature of said second conductive-type silicon substrate is maintained at a constant temperature between 460° and 550° C., wherein during said step of depositing said substrate is arranged in a chamber having a parallel plane electrode, SiH 4 gas is introduced into the chamber, high frequency voltage is applied between the parallel plane electrode, and said SiH 4 gas is activated by high frequency discharging generated between the parallel plane electrode.

Claim 2

A method for manufacturing a semiconductor device using silicon microcrystal, comprising the step of: depositing a first conductive-type silicon microcrystal layer on a second conductive-type silicon substrate at a growth velocity of 15 Å/sec or more by a plasma chemical vapor deposition method in a state that the temperature of said second conductive-type silicon substrate is maintained at a constant temperature between 460° and 550° C., wherein during said step of depositing said substrate is arranged in a chamber having a parallel plane electrode, SiH 4 gas is introduced into the chamber, high frequency voltage is applied between the parallel plane electrode, and said SiH 4 gas is activated by high frequency discharging generated between the parallel plane electrode.

Claim 5

A method for manufacturing a bipolar type semiconductor device using a silicon microcrystal, comprising the steps of: forming a second conductive-type region on a part of the main surface of a first conductive-type silicon monocrystal substrate; and depositing a first conductive-type silicon microcrystal layer on said second conductive-type silicon substrate at a growth velocity of 15 Å/sec or more by a plasma chemical vapor deposition method in a state that the temperature of said substrate is maintained at a constant temperature between 460° to 550° C., wherein during said step of depositing said silicon microcrystal layer, said substrate is arranged in a chamber having a parallel plane electrode, SiH 4 gas is introduced into the chamber, high frequency voltage is applied between the parallel plane electrode, and mixed gas is activated by high frequency discharging generated between the parallel plane electrode.

Claim 6

A method for manufacturing a bipolar type semiconductor device using a silicon microcrystal, comprising the steps of: forming a second conductive-type region on a part of the main surface of a first conductive-type silicon monocrystal substrate; and depositing a first conductive-type silicon microcrystal layer on said second conductive-type silicon substrate at a growth velocity of 15 Å/sec or more by a plasma chemical vapor deposition method in a state that the temperature of said substrate is maintained at a constant temperature between 460° to 550° C., wherein during said step of depositing said silicon microcrystal layer, said substrate is arranged in a chamber having a parallel plane electrode, SiH 4 gas is introduced into the chamber, high frequency voltage is applied between the parallel plane electrode, and mixed gas is activated by high frequency discharging generated between the parallel plane electrode.

Claim 9

A method for manufacturing a bipolar type semiconductor device using a silicon microcrystal, comprising the steps of: forming a second conductive-type region on a part of an element forming region of the main surface of a first conductive-type silicon monocrystal substrate serving as a collector by ion-implanting a second conductive-type impurity; forming a second conductive-type inner base on the entire surface of the element forming region of said substrate or a surface other than said outer base by ion-implanting the second conductive-type impurity therein; and forming a first conductive-type emitter by depositing a first conductive-type silicon microcrystal layer on said inner base at a growth velocity of 15 Å/sec or more by a plasma chemical vapor deposition method in a state that the temperature of said substrate is maintained at a constant temperature between 460° to 550° C., wherein during the step of depositing said silicon microcrystal layer, said substrate is arranged in a chamber having a parallel plane electrode, SiH 4 is introduced into the chamber, high frequency voltage is applied between the parallel plane electrode, and said gas is activated by high frequency discharging generated between the parallel plane electrode.

Claim 10

A method for manufacturing a bipolar type semiconductor device using a silicon microcrystal, comprising the steps of: forming a second conductive-type region on a part of an element forming region of the main surface of a first conductive-type silicon monocrystal substrate serving as a collector by ion-implanting a second conductive-type impurity; forming a second conductive-type inner base on the entire surface of the element forming region of said substrate or a surface other than said outer base by ion-implanting the second conductive-type impurity therein; and forming a first conductive-type emitter by depositing a first conductive-type silicon microcrystal layer on said inner base at a growth velocity of 15 Å/sec or more by a plasma chemical vapor deposition method in a state that the temperature of said substrate is maintained at a constant temperature between 460° to 550° C., wherein during the step of depositing said silicon microcrystal layer, said substrate is arranged in a chamber having a parallel plane electrode, SiH 4 is introduced into the chamber, high frequency voltage is applied between the parallel plane electrode, and said gas is activated by high frequency discharging generated between the parallel plane electrode.

Claim 13

A method for manufacturing a bipolar type semiconductor device using a silicon microcrystal, comprising the steps of: forming a mask having an opening on an element forming region of the main surface of an n-type silicon monocrystal substrate serving as a collector; forming a p-type outer base on a part of the element forming region of the main surface of said substrate via the opening of said mask by ion-implanting p-type impurity therein; forming a p-type inner base on the entire surface of the element forming region of said substrate by ion-implanting p-type impurity therein after removing said mask; and forming an n-type emitter by depositing an n-type silicon microcrystal layer on said inner base at a growth velocity of 15 Å/sec or more by a plasma chemical vapor deposition method in a state that the temperature of said substrate is maintained at a constant temperature between 460° to 550° C., wherein said substrate is arranged in a chamber having a parallel plane electrode, SiH 4 gas is introduced into the camber, high frequency voltage is supplied between the parallel plane electrode, and said gas is activated by high frequency discharging generated between the parallel plane electrode.

Claim 14

A method for manufacturing a bipolar type semiconductor device using a silicon microcrystal, comprising the steps of: forming a mask having an opening on an element forming region of the main surface of an n-type silicon monocrystal substrate serving as a collector; forming a p-type outer base on a part of the element forming region of the main surface of said substrate via the opening of said mask by ion-implanting p-type impurity therein; forming a p-type inner base on the entire surface of the element forming region of said substrate by ion-implanting p-type impurity therein after removing said mask; and forming an n-type emitter by depositing an n-type silicon microcrystal layer on said inner base at a growth velocity of 15 Å/sec or more by a plasma chemical vapor deposition method in a state that the temperature of said substrate is maintained at a constant temperature between 460° to 550° C., wherein said substrate is arranged in a chamber having a parallel plane electrode, SiH 4 gas is introduced into the camber, high frequency voltage is supplied between the parallel plane electrode, and said gas is activated by high frequency discharging generated between the parallel plane electrode.