US5360987A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor photodiode device with isolation region
Assignee: Nokia Bell Labs
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Filing: 1993-11-17
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Granted: 1994-11-01
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Expires: 2013-11-17
Abstract
Abstract A dielectrically isolated photodiode having an increased p-n junction size with improved photo-carrier collection efficiency. The photodiode comprises a first layer of semiconductor material formed on the bottom and the walls of an isolation region; a second layer of semiconductor material formed on the first layer. The second layer forming a first p-n junction with the first layer and having opposite conductivity type compared to that of the first layer. The photodiode also comprises a third layer of semiconductor material formed on the second layer and electrically coupled to the first layer. The third layer having the same conductivity type as the first layer and forming a second p-n junction with the second layer. During operation, the first p-n junction functions to collect photo-generated carriers that extend to the bottom and walls of the isolation region, thereby increasing the active collecting p-n junction area per isolation region area to improve efficiency of the photodiode.
Inventors
- 👤 Muhammed A. Shibib
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 14:58
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/103; H10D; H10D86/00; H10D86/201; H10F19/00; H10F19/10; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F71/00; H10F77/00; H10F77/10; H10F77/14; H10F77/148; H10F77/16; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
158 words
A photodiode in an isolation region of a substrate, the isolation region having a bottom and walls, the photodiode comprising: a first layer of semiconductor material formed on the bottom and the walls of the isolation region, said first layer having a first conductivity type; a second layer of semiconductor material formed on said first layer, said second layer having a second conductivity type opposite to said first conductivity type and forming a first p-n junction with said first layer; and a third layer of semiconductor material formed on said second layer and electrically coupled to said first layer, said third layer of semiconductor having said first conductivity type and forming a second p-n junction with said second layer; wherein during operation, said first p-n junction functions to collect photo-generated carriers that extend to the bottom and walls of the isolation region, thereby increasing collecting p-n junction area per isolation region area to improve efficiency of the photodiode.
Claim 2
Dependent Claim
158 words
A photodiode in an isolation region of a substrate, the isolation region having a bottom and walls, the photodiode comprising: a first layer of semiconductor material formed on the bottom and the walls of the isolation region, said first layer having a first conductivity type; a second layer of semiconductor material formed on said first layer, said second layer having a second conductivity type opposite to said first conductivity type and forming a first p-n junction with said first layer; and a third layer of semiconductor material formed on said second layer and electrically coupled to said first layer, said third layer of semiconductor having said first conductivity type and forming a second p-n junction with said second layer; wherein during operation, said first p-n junction functions to collect photo-generated carriers that extend to the bottom and walls of the isolation region, thereby increasing collecting p-n junction area per isolation region area to improve efficiency of the photodiode.
Claim 3
Dependent Claim
20 words
The photodiode according to claim 1, wherein said first conductivity type is P and said second conductivity type is N.
Claim 4
Dependent Claim
20 words
The photodiode according to claim 1, wherein said first conductivity type is N and said second conductivity type is P.
Claim 5
Dependent Claim
21 words
The photodiode according to claim 1, wherein the substrate is polysilicon and the isolation region comprises dielectric isolation having non-vertical walls.
Claim 6
Dependent Claim
21 words
The photodiode according to claim 1, wherein the substrate is insulating and the isolation region is formed between vertical isolation trenches.
Claim 7
Dependent Claim
13 words
The photodiode according to claim 1, wherein the substrate is a crystalline semiconductor.
Claim 8
Dependent Claim
161 words
A photodiode in an isolation region of a substrate, the isolation region having a bottom and walls, the photodiode comprising: a first layer of semiconductor material formed on the bottom of the isolation region, said first layer having a first conductivity type and a first dopant concentration level; a second layer of semiconductor material formed on said first layer, said second layer having a second conductivity type opposite to said first conductivity type and forming a first p-n junction with said first layer; and a third layer of semiconductor material formed on said second layer, said third layer of semiconductor having said first conductivity type, a second dopant concentration level higher than said first dopant concentration level and forming a second p-n junction with said second layer; wherein during operation, said first layer provides a built-in electric field that directs electron-hole pairs away from the bottom of the isolation region, thereby increasing electron-hole pair collection efficiency of said second p-n junction.
Claim 9
Dependent Claim
161 words
A photodiode in an isolation region of a substrate, the isolation region having a bottom and walls, the photodiode comprising: a first layer of semiconductor material formed on the bottom of the isolation region, said first layer having a first conductivity type and a first dopant concentration level; a second layer of semiconductor material formed on said first layer, said second layer having a second conductivity type opposite to said first conductivity type and forming a first p-n junction with said first layer; and a third layer of semiconductor material formed on said second layer, said third layer of semiconductor having said first conductivity type, a second dopant concentration level higher than said first dopant concentration level and forming a second p-n junction with said second layer; wherein during operation, said first layer provides a built-in electric field that directs electron-hole pairs away from the bottom of the isolation region, thereby increasing electron-hole pair collection efficiency of said second p-n junction.
Claim 10
Dependent Claim
20 words
The photodiode according to claim 7, wherein said first conductivity type is P and said second conductivity type is N.
Claim 11
Dependent Claim
20 words
The photodiode according to claim 7, wherein said first conductivity type is N and said second conductivity type is P.
Claim 12
Dependent Claim
21 words
The photodiode according to claim 7, wherein the substrate is polysilicon and the isolation region comprises dielectric isolation having non-vertical walls.
Claim 13
Dependent Claim
21 words
The photodiode according to claim 7, wherein the substrate is insulating and the isolation region is formed between vertical isolation trenches.
Claim 14
Dependent Claim
13 words
The photodiode according to claim 7, wherein the substrate is a crystalline semiconductor.
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JPS62123783A
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-10-31 | 1998-05-02 | 1998-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-31 | 2002-05-02 | 2002-11-01 | $3760.00 | Window Closed / Lapsed |
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