US4961097A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High frequency photo detector and method for the manufacture thereof
Assignee: Motorola Solutions Inc
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Filing: 1985-03-11
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Granted: 1990-10-02
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Expires: 2005-03-11
Abstract
Abstract An improved photo detector is provided by forming a tub of monocrystalline semiconductor material surrounded by a layer of monocrystalline material of opposite conductivity type. The improved structure is manufactured by means of a modified DIC process. The device may by made deep enough to absorb a large portion of the incident radiation near the PN junction without sacrificing a large number of photo-generated carriers to recombination.
Inventors
- 👤 Hassan Pirastehfar
- 👤 George C. Onodera
- 👤 Waisiu Law
- 👤 David M. Heminger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:33
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/121; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/221; H10F77/00; H10F77/10; H10F77/14; H10F77/148; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
209 words
A photo detector comprising: a body of polycrystalline semiconductor material having a major face and a surface defining a first tub therein; an isolation region being disposed about said surface of said body defining the first tub and having a surface defining a second tube; a first region of a monocrystalline semiconductor material having a first conductivity type, said first region being disposed about said surface of said isolation region defining the second tub and have a surface defining a third tub; a second region of said monocrystalline semiconductor material having a second conductivity type, said second region being disposed within the third tub defined by said first region and having a major face coincident with said major face of said body; a third region of said monocrystalline semiconductor material having said first conductivity type and being disposed in said second region such that a major face of said third region is coincident with said major face of said body and said third region is connected to said first region; and a forth region of said monocrystalline semiconductor material having said second conductivity type and being disposed in said second region such that a major face of said forth region is coincident with said major face of said body.
Claim 2
Dependent Claim
209 words
A photo detector comprising: a body of polycrystalline semiconductor material having a major face and a surface defining a first tub therein; an isolation region being disposed about said surface of said body defining the first tub and having a surface defining a second tube; a first region of a monocrystalline semiconductor material having a first conductivity type, said first region being disposed about said surface of said isolation region defining the second tub and have a surface defining a third tub; a second region of said monocrystalline semiconductor material having a second conductivity type, said second region being disposed within the third tub defined by said first region and having a major face coincident with said major face of said body; a third region of said monocrystalline semiconductor material having said first conductivity type and being disposed in said second region such that a major face of said third region is coincident with said major face of said body and said third region is connected to said first region; and a forth region of said monocrystalline semiconductor material having said second conductivity type and being disposed in said second region such that a major face of said forth region is coincident with said major face of said body.
Claim 3
Dependent Claim
37 words
The photo detector of claim 1 wherein: said first, second, and third regions of said monocrystalline semiconductor material comprises silicon; said first conductivity type is a P-type silicon; and said second conductivity type is an N-type silicon.
Claim 4
Dependent Claim
18 words
The photo detector of claim 2 wherein said second region of said monocrystalline semiconductor material comprises antimony-doped silicon.
Claim 5
Dependent Claim
35 words
The photo detector of claim 1 further comprising: a first contact being coupled to said major face of said fourth region; and a second contact being coupled to said major face of said third region.
Claim 6
Dependent Claim
216 words
A photo detector comprising: a body of polycrystalline semiconductor material having a major face and a surface defining a first tub therein; an isolation region being disposed about said surface of said body defining the first tub and having a surface defining a second tube; a first collector region of a monocrystalline semiconductor material having a first conductivity type, said first collector region being disposed about said surface of said isolation region defining the second tub and having a surface defining a third tub; a generating region of said monocrystalline semiconductor material having a second conductivity type, said generating region being disposed within the third tub defined by said first collector region and having a major face coincident with said major face of said body; a second collector region of said monocrystalline semiconductor material having said first conductivity type and being disposed in said generating region such that a major face of said second collector region is coincident with said major face of said body and said second collector region is connected to said first collector region; and a contact region of said monocrystalline semiconductor material having said second conductivity type and being disposed in said generating region such that a major face of said contact region is coincident with said major face of said body.
Claim 7
Dependent Claim
216 words
A photo detector comprising: a body of polycrystalline semiconductor material having a major face and a surface defining a first tub therein; an isolation region being disposed about said surface of said body defining the first tub and having a surface defining a second tube; a first collector region of a monocrystalline semiconductor material having a first conductivity type, said first collector region being disposed about said surface of said isolation region defining the second tub and having a surface defining a third tub; a generating region of said monocrystalline semiconductor material having a second conductivity type, said generating region being disposed within the third tub defined by said first collector region and having a major face coincident with said major face of said body; a second collector region of said monocrystalline semiconductor material having said first conductivity type and being disposed in said generating region such that a major face of said second collector region is coincident with said major face of said body and said second collector region is connected to said first collector region; and a contact region of said monocrystalline semiconductor material having said second conductivity type and being disposed in said generating region such that a major face of said contact region is coincident with said major face of said body.
References Cited (Backward Citations)
US4579625A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-10-01 | 1994-04-02 | 1994-10-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-01 | 1998-04-02 | 1998-10-02 | $3760.00 | Window Closed / Lapsed |
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