Photodetector with built-in circuit

Abstract

Abstract PURPOSE:To make a high-speed and high-sensitivity photodetector with a built-in circuit by a method wherein a photodetector is formed in a part of a high- resistivity epitaxial layer corresponding to a recessed part and a circuit element is formed in a high-resistivity epitaxial layer corresponding to a flat part. CONSTITUTION:A photodetector 2 is formed in a part of a thick and high- resistivity epitaxial layer 3 corresponding to a recessed part; a layer of a second conductivity type is formed and a circuit element 7 is formed in a part of a thin and a high-resistivity epitaxial layer 3 corresponding to a flat part. Since the high-resistivity and thick epitaxial layer 3 is used for the photodetector, its response speed is fast and, in addition, its optical sensitivity can be enhanced. Since the thin layer 3 can be utilized for the part of the circuit element, semiconductor layers whose thickness are optimum can be utilized for the photodetector and the circuit element. Thereby, a high-speed and high-sensitivity photodetector with a built-in circuit can be manufactured.

Inventors

• 👤 Masaru Kubo
• 👤 勝 久保
• 👤 Takuya Ito
• 👤 卓也 伊藤

Bibliographic Details