US5239193A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon photodiode for monolithic integrated circuits
Assignee: Nokia Bell Labs
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Filing: 1992-05-11
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Granted: 1993-08-24
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Expires: 2012-05-11
Abstract
Abstract An integrated photodiode is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 microns, forming an isolated p-n junction on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon. A desired monolithic integrated circuit is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.
Inventors
- 👤 Janet L. Benton
- 👤 Renuka P. Jindal
- 👤 Ya-Hong Xie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:07
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/147; H10F39/00; H10F39/10; H10F39/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
89 words
In a silicon monolithic integrated circuit device including a silicon substrate, an integrated photodiode comprising: a body of intrinsic silicon disposed within a tub in said substrate, having an outer periphery adjacent said substrate and having a thickness in excess of about 20 microns; p-n junction means underlying said outer periphery of said body; first electrode means in ohmic contact with said intrinsic silicon; and second electrode means on the surface of said intrinsic silicon in electrical contact with said intrinsic silicon and spaced from said first electrode means.
Claim 2
Dependent Claim
89 words
In a silicon monolithic integrated circuit device including a silicon substrate, an integrated photodiode comprising: a body of intrinsic silicon disposed within a tub in said substrate, having an outer periphery adjacent said substrate and having a thickness in excess of about 20 microns; p-n junction means underlying said outer periphery of said body; first electrode means in ohmic contact with said intrinsic silicon; and second electrode means on the surface of said intrinsic silicon in electrical contact with said intrinsic silicon and spaced from said first electrode means.
Claim 3
Dependent Claim
36 words
The monolithic integrated circuit device of claim 1 wherein said silicon substrate is monocrystalline silicon oriented in the (100) direction and said body of intrinsic silicon has side walls along the (111) plane of said substrate.
Claim 4
Dependent Claim
19 words
The monolithic integrated circuit device of claim 1 wherein said body of intrinsic silicon is epitaxially grown intrinsic silicon.
Claim 5
Dependent Claim
21 words
The monolithic integrated circuit device of claim 1 including one or more transistors connected for amplifying the output of said photodiode.
Claim 6
Dependent Claim
91 words
A photodiode monolithically integrated in a substrate of monocrystalline silicon comprising: disposed within a tub in said substrate a body of epitaxially grown intrinsic silicon having a thickness in excess of about 20 microns; said body having an upper surface substantially coplanar with said substrate; p-n junction means disposed between said body and said substrate; first electrode means around a periphery of said body on said upper surface; second electrode means within the periphery of said body on said upper surface, said second electrode means spaced from said first electrode means.
Claim 7
Dependent Claim
91 words
A photodiode monolithically integrated in a substrate of monocrystalline silicon comprising: disposed within a tub in said substrate a body of epitaxially grown intrinsic silicon having a thickness in excess of about 20 microns; said body having an upper surface substantially coplanar with said substrate; p-n junction means disposed between said body and said substrate; first electrode means around a periphery of said body on said upper surface; second electrode means within the periphery of said body on said upper surface, said second electrode means spaced from said first electrode means.
Claim 8
Dependent Claim
24 words
A photodiode in accordance with claim 1 wherein said body of intrinsic silicon has sidewalls substantially parallel to the (111) planes of said substrate.
Claim 9
Dependent Claim
28 words
A photodiode in accordance with claim 5 wherein said second electrode means is spaced from said first electrode means by a spacing in excess of about 20 microns.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-23 | 1997-02-22 | 1997-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-23 | 2001-02-22 | 2001-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-23 | 2005-02-22 | 2005-08-24 | $7700.00 | Window Closed / Lapsed |