Photodiode

Abstract

Abstract PURPOSE:To apply an incident light which is not absorbed in semiconductor layers forming a P-N junction to the P-N junction again and reduce the loss and improve conversion efficiency by providing a reflective layer which reflects the light at the bottom of the semiconductor layers. CONSTITUTION:A reflective layer 20 made of electrical conductor such as metal is formed on a polycrystalline silicon substrate 11 with a silicon oxide film 14 between and a photodiode 17, composed of the 1st conductivity type semiconductor layer 12 and the 2nd conductivity type semiconductor layer 13 is formed. A P-N junction is formed between the 1st semiconductor layer 12 and the 2nd semiconductor layer 13 and a high concentration layer 12a into which donors are introduced with a high concentration is formed at the boundary between the 1st semiconductor layer 12 and the reflective layer 20 and a metal wiring 15 is connected to the surface of the layer 12a through a metal layer 21. In the same way, a metal wiring 16 is connected to the surface of the 2nd semiconductor layer 13.

Inventors

• 👤 Kenji Ogawa
• 👤 小川　憲治

Bibliographic Details