US5360985A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Press-contact type semiconductor device
Assignee: Toshiba Corp
•
Filing: 1993-06-01
•
Granted: 1994-11-01
•
Expires: 2013-06-01
Abstract
Abstract In a semiconductor device, a pellet electrode, which is formed on a mesa-shaped pellet, and an external electrode, with which a package is provided, are in pressure-contact with each other. A soft-metal plate which has projections along its surface is arranged between the external electrode and the pellet electrode.
Inventors
- 👤 Michiaki Hiyoshi
- 👤 Takashi Fujiwara
- 👤 Hisashi Suzuki
- 👤 Hideo Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:18
CPC Classifications
H; H10; H10W; H10W72/00; H10W76/00; H10W76/10; H10W76/12; H10W76/13; H10W76/138; H10W72/30; H10W72/381
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
204 words
A press-contact type semiconductor device comprising: a pellet having first and second major surfaces, said pellet having a mesa portion provided on said first major surface, said second major surface being flat; a package enclosing said pellet; a first pellet electrode provided on said mesa portion of said pellet; a second pellet electrode provided on said second major surface of said pellet; a semiconductor element provided in said pellet and having a current path, said first pellet electrode being connected to one end of said current path, said second pellet electrode being connected to another end of said current path; a first electrode post which is provided in said package so as to be located above said first pellet electrode, and to which pressure is applied; a second electrode post which is provided in said package so as to be located above said second pellet electrode, and to which pressure is applied; an electrode plate arranged between said first pellet electrode and said first electrode post; a soft-metal plate arranged between said first pellet electrode and said electrode plate, and having a ragged surface; and a protecting layer provided on said ragged surface of said soft-metal plate, for protecting said ragged surface from oxidization.
Claim 2
Dependent Claim
204 words
A press-contact type semiconductor device comprising: a pellet having first and second major surfaces, said pellet having a mesa portion provided on said first major surface, said second major surface being flat; a package enclosing said pellet; a first pellet electrode provided on said mesa portion of said pellet; a second pellet electrode provided on said second major surface of said pellet; a semiconductor element provided in said pellet and having a current path, said first pellet electrode being connected to one end of said current path, said second pellet electrode being connected to another end of said current path; a first electrode post which is provided in said package so as to be located above said first pellet electrode, and to which pressure is applied; a second electrode post which is provided in said package so as to be located above said second pellet electrode, and to which pressure is applied; an electrode plate arranged between said first pellet electrode and said first electrode post; a soft-metal plate arranged between said first pellet electrode and said electrode plate, and having a ragged surface; and a protecting layer provided on said ragged surface of said soft-metal plate, for protecting said ragged surface from oxidization.
Claim 3
Dependent Claim
38 words
The press-contact type semiconductor device according to claim 1, wherein said soft-metal plate has projections provided on said ragged surface and having a maximum height of 0.5 μm to 1.0 μm when a reference length is 0.25 mm.
Claim 4
Dependent Claim
17 words
The press-contact type semiconductor device according to claim 1, wherein said soft-metal plate is made of copper.
Claim 5
Dependent Claim
22 words
The press-contact type semiconductor device according to claim 1, wherein said first pellet electrode on said mesa portion is made of aluminum.
Claim 6
Dependent Claim
16 words
The press-contact type semiconductor device according to claim 1, wherein said semiconductor element comprises a thyristor.
Claim 7
Dependent Claim
17 words
The press-contact type semiconductor device according to claim 1, wherein said semiconductor element comprises a bipolar transistor.
Claim 8
Dependent Claim
18 words
The press-contact type semiconductor device according to claim 1, wherein said semiconductor element comprises an insulated-gate bipolar transistor.
Claim 9
Dependent Claim
26 words
The press-contact type semiconductor device according to claim 1, further comprising: a further electrode plate arranged between said second pellet electrode and said second electrode post.
Claim 10
Dependent Claim
38 words
The press-contact type semiconductor device according to claim 8, wherein said soft-metal plate has projections provided on said ragged surface and having a maximum height of 0.5 μm to 1.0 μm when a reference length is 0.25 mm.
Claim 11
Dependent Claim
17 words
The press-contact type semiconductor device according to claim 8, wherein said soft-metal plate is made of copper.
Claim 12
Dependent Claim
22 words
The press-contact type semiconductor device according to claim 8, wherein said first pellet electrode on said mesa portion is made of aluminum.
Claim 13
Dependent Claim
26 words
The press-contact type semiconductor device according to claim 8, wherein said electrode plate is made of molybdenum, and said further electrode plate is made of molybdenum.
Claim 14
Dependent Claim
17 words
The press-contact type semiconductor device according to claim 1, wherein said protecting layer is made of gold.
Claim 15
Dependent Claim
17 words
The press-contact type semiconductor device according to claim 1, wherein said electrode plate is made of molybdenum.
References Cited (Backward Citations)
US3893153A
Cited
DE2556469A1
Cited
JPS5495183A
Cited
JPS5578535A
Cited
EP0021025A1
Cited
US4918514A
Cited
US4881118A
Cited
EP0347561A2
Cited
US4937653A
Cited
US4958215A
Cited
EP0365007A2
Cited
US4996586A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-31 | 1998-05-02 | 1998-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-31 | 2002-05-02 | 2002-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-31 | 2006-05-02 | 2006-11-01 | $7700.00 | Window Closed / Lapsed |