Method for growing a high-melting-point metal film

Claim 3

The method as claimed in claim 1, wherein said first and second ion-implanted layers are dopants formed by impurities selected from the group comprised of silicon, arsenic, boron, or phosphorous.

Claim 4

The method as claimed in claim 1, further comprised of forming an imperfect layer of about 200-500 Å on a surface of said second ion-implanted layer during said step for forming said second ion-implanted layer in said first ion-implanted layer.

Claim 5

The method as claimed in claim 1, wherein said high-melting-point metal fluoride gas and said silane gas is mixed with a mixing ratio of about three to two, and said step of growing said film of high-melting-point metal further comprises the step of: reacting said high-melting-point metal fluoride gas with said silane gas for 45 to 90 seconds at a temperature between 280° C. and 300° C. to grow said film of high-melting-point metal to an initial thickness of about 1,500-3,000 Å; and subjecting said silicon substrate to the heat treatment for 2 minutes at the temperature of about 450° C.; repeating, alternately, the step of reacting said high-melting-point metal fluoride gas with said silane gas, and the step of subjecting said silicon substrate to the heat treatment, until said film of high-metal-point metal is grown to said given thickness.

Claim 6

The method as claimed in claim 1, wherein said step for subjecting said silicon substrate to a heat treatment is continued for about 2 minutes at a temperature of about 450° C.

Claim 9

The method as claimed in claim 6, wherein said given impurity of the ion implantation is of silicon, arsenic, boron, or phosphorous.

Claim 10

The method as claimed in claim 6, comprised of forming an imperfect layer of about 200-500 Å on a surface of said second ion-implanted layer in said step of forming said second ion-implanted layer on said surface of said first ion-implanted layer.

Claim 11

The method as claimed in claim 6, wherein said high-melting-point metal fluoride gas is tungsten fluoride, and said film of high-melting-point metal is tungsten.

Claim 12

The method as claimed in claim 6, further comprised of alternately repeating said step of pyrolyzing the mixture of said high-melting-point metal fluoride gas and said silane gas and said step of subjecting said silicon substrate to a heat treatment until said film of high-melting-point metal is grown to said selected thickness.

Claim 13

The method as claimed in claim 1, wherein said step of growing said film of high-melting-point metal comprises the step of: reacting said high-melting-point metal fluoride gas with said silane gas for a first time period at a first temperature to grow said film of high-melting-point metal to a first thickness; and subjecting said silicon substrate to the heat treatment for a second time period at a second temperature; repeating the step of reacting said high-melting-point metal fluoride gas with said silane gas, and the step of subjecting said silicon substrate to the heat treatment, successively to increase the thickness of said film of high-melting-point metal until said film of high-metal-point metal is grown to said given thickness.

Claim 14

The method as claimed in claim 11, wherein said first time period is about 45-90 seconds, said first temperature is between 280° C. and 300° C., said second time period is about minutes and said second temperature is about 450° C.

Claim 17

The method as claimed in claim 13, wherein said high-melting-point metal fluoride gas is tungsten fluoride, and said high-melting-point metal film is tungsten.

Claim 18

The method as claimed in claim 13, further comprised of forming an imperfection layer of about 200-500 Å on the surface of said second ion-implanted region, within said contact holed, after said second ion-implanted region is formed within said first ion-implanted region.

Claim 19

The method as claimed in claim 13, further comprised of repeating the chemical deposition of said high-melting-point metal fluoride gas and said silane gas, and the annealing of said substrate until said high-melting-point metal film is grown to said selected thickness.

Claim 20

The method as claimed in claim 13, wherein said step of growing said high-melting-point metal film comprises the step of: depositing said high-melting-point metal fluoride gas and said silane gas for a first time period at a first temperature to grow said high-melting-point metal film to an initial thickness; and annealing said substrate for a second time period at a second temperature; repeating the step of depositing said high-melting-point metal fluoride gas and said silane gas, and the step of annealing said substrate, successively to increase the thickness of said high- melting-point metal film until said high-metal-point metal film is grown to said selected thickness.

Claim 21

The method as claimed in claim 17, wherein said first time period is about 45-90 seconds, said first temperature is between 280° C. and 300° C., said second time period is about 2 minutes and said second temperature is about 450° C.

Claim 22

The method as claimed in claim 13, wherein said impurities are selected from the group comprised of silicon, arsenic, boron, or phosphorous.

Claim 23

A semiconductor device having a high-melting-point metal film formed on a surface of at least one contact hole formed on a substrate, said semiconductor device being prepared by a process comprising the steps of: forming first and second ion-implanted regions within the contact hole, beneath the surface of said substrate by successively implanting impurities of a conductivity type into the surface of said substrate exposed by said contact hole, said second ion-implanted region being formed within said first ion-implanted region and positioned directly beneath the surface of said substrate exposed by said contact hold; contacting the surface of said second ion-implanted region with a high-melting-point metal fluoride gas to form a high-melting-point metal film on the surface of said second ion-implanted region, within said contact hole; depositing said high-melting-point metal fluoride gas and silane gas to grow said high-melting-point metal film, within said contact hole, to a selected thickness; annealing said substrate; and repeating the step of depositing said high-melting-point metal fluoride gas and said silane gas, and the step of annealing said substrate, successively to increase the thickness of said high-melting point metal film until said high-metal-point metal film is grown to said selected thickness.

Claim 24

A semiconductor device having a high-melting-point metal film formed on a surface of at least one contact hole formed on a substrate, said semiconductor device being prepared by a process comprising the steps of: forming first and second ion-implanted regions within the contact hole, beneath the surface of said substrate by successively implanting impurities of a conductivity type into the surface of said substrate exposed by said contact hole, said second ion-implanted region being formed within said first ion-implanted region and positioned directly beneath the surface of said substrate exposed by said contact hold; contacting the surface of said second ion-implanted region with a high-melting-point metal fluoride gas to form a high-melting-point metal film on the surface of said second ion-implanted region, within said contact hole; depositing said high-melting-point metal fluoride gas and silane gas to grow said high-melting-point metal film, within said contact hole, to a selected thickness; annealing said substrate; and repeating the step of depositing said high-melting-point metal fluoride gas and said silane gas, and the step of annealing said substrate, successively to increase the thickness of said high-melting point metal film until said high-metal-point metal film is grown to said selected thickness.

Claim 25

The semiconductor device as claimed in claim 20, wherein said high-melting-point metal fluoride gas is tungsten fluoride, and said high-melting-point metal film is tungsten.

Claim 26

The semiconductor device as claimed in claim 20, said process further comprised of forming an imperfection layer of about 200--500 Å on the surface of said second ion-implanted region, within said contact hole, after said second ion-implanted region is formed within said first ion-implanted region.

Claim 27

The semiconductor device as claimed in claim 20, wherein said high-metal-point metal film is grown to said selected thickness by initially depositing said high-melting-point metal fluoride gas and said silane gas for 45-90 seconds at a temperature between 280° C and 300° C. to grow said high-melting-point metal film to an initial thickness of about 1,500-3,000 Å, and annealing said substrate for about 2 minutes at a temperature of about 450° C., and repeating, alternatively, the step of depositing said high-melting-point metal fluoride gas and said silane gas, and the step of annealing said substrate, until said high-metal-point metal film is grown to said selected thickness.

Claim 28

The semiconductor device as claimed in claim 20, wherein said impurities are selected from the group comprised of silicon, arsenic, boron, or phosphorous.