Forming method of high melting-point metallic film

Abstract

Abstract PURPOSE:To improve adhesive properties between a foundation substrate and a high melting-point metallic film by applying heat treatment at a temperature higher than a temperature, where the high melting-point metallic film is formed, immediately after a process in which the high melting-point metallic film is shaped through a chemical vapor growth method. CONSTITUTION:An n<+> type diffusion layer 4 is formed by implanting the ions of As, etc., to a p-type silicon substrate 1, and an silicon dioxide film 3 is shaped onto the whole surface of the substrate as an insulating film. The SiO2 film 3 is etched, and a contact hole 5 for connecting an electrode to the n<+> type diffusion layer 4 is formed. A tungsten film 9 is deposited onto the diffusion layer 4 exposed by forming the contact hole 5 through a selective vapor growth method at that time to bury the inside of the contact hole 5. The semiconductor substrate is heated at 500 deg.C in a reaction furnace during a time when the surface temperature of the semiconductor substrate is not lowered to a temperature lower than 300 deg.C in this case, and thermally treated in nitrogen gas. Accordingly, the substrate is thermally treated at a temperature higher than a temperature used when a high melting-point metallic film is buried into the contact hole, thus improving the adhesive properties of the high melting-point metallic film.

Inventors

• 👤 Iwao Kunishima
• 👤 Hitoshi Ito

Bibliographic Details