Patent US5356515A successfully refreshed from Google Patents.
US5356515A
Expired / Lapsed
US
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Dry etching method
Assignee: Toshiba Corp
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Filing: 1992-12-10
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Granted: 1994-10-18
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Expires: 2012-12-10
Abstract
Abstract A dry etching method which includes supplying a workpiece having an oxide portion or a nitride portion into a processing vessel, keeping said workpiece at temperatures not higher than 0 DEG C. within said processing vessel, supplying an etching gas including a first gas containing a halogen element and a second gas containing carbon having an oxidation number of less than 4 and oxygen to a region in the vicinity of the workpiece while keeping the temperature the workpiece at a level not higher than 0 DEG C., and forming a plasma of said etching gas for etching the oxide portion or the nitride portion of the workpiece with said plasma.
Inventors
- 👤 Yoshifumi Tahara
- 👤 Yoshihisa Hirano
- 👤 Masahiro Ogasawara
- 👤 Isahiro Hasegawa
- 👤 Keiji Horioka
- 👤 Takaya Matsushita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:18
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
152 words
A dry etching method, comprising the steps of: placing a workpiece having an oxide portion or a nitride portion and structurally having a central portion and a peripheral portion about the central portion in a processing vessel; keeping said workpiece at a temperature not higher than 0° C. within the processing vessel; supplying an etching gas including a first gas containing a halogen element and a second gas containing carbon having an oxidation number of less than 4 and oxygen to a region in the vicinity of the workpiece while keeping the temperature of the workpiece at a level not higher than 0° C.; and forming a plasma of said etching gas for etching the oxide portion or the nitride portion of the workpiece with the plasma, wherein the amount of the second gas supplied to the peripheral portion of the workpiece is larger than the amount supplied to the central portion.
Claim 2
Dependent Claim
152 words
A dry etching method, comprising the steps of: placing a workpiece having an oxide portion or a nitride portion and structurally having a central portion and a peripheral portion about the central portion in a processing vessel; keeping said workpiece at a temperature not higher than 0° C. within the processing vessel; supplying an etching gas including a first gas containing a halogen element and a second gas containing carbon having an oxidation number of less than 4 and oxygen to a region in the vicinity of the workpiece while keeping the temperature of the workpiece at a level not higher than 0° C.; and forming a plasma of said etching gas for etching the oxide portion or the nitride portion of the workpiece with the plasma, wherein the amount of the second gas supplied to the peripheral portion of the workpiece is larger than the amount supplied to the central portion.
Claim 3
Dependent Claim
16 words
The dry etching method according to claim 1, wherein said second gas contains carbon monoxide (CO).
Claim 4
Dependent Claim
34 words
The dry etching method according to claim 1, wherein said second gas is constituted of at least one compound selected from the group consisting of HCOOH, HCHO, CH 3 COOH and CH 3 OH.
Claim 5
Dependent Claim
16 words
The dry etching method according to claim 1, wherein said first gas contains a fluorine-containing compound.
Claim 6
Dependent Claim
18 words
The dry etching method according to claim 4, wherein said first gas contains at least one fluorocarbon compound.
Claim 7
Dependent Claim
16 words
The dry etching method according to claim 5, wherein said first gas is CHF 3 .
Claim 8
Dependent Claim
16 words
The dry etching method according to claim 6, wherein said second gas contains carbon monoxide (CO).
Claim 9
Dependent Claim
27 words
The dry etching method according to claim 7, wherein the amount of the CO gas supplied is greater than the amount of the CHF 3 gas supplied.
Claim 10
Dependent Claim
21 words
The dry etching method according to claim 1, wherein said etching method is conducted by the formation of a magnetron discharge.
Claim 11
Dependent Claim
26 words
The dry etching method according to claim 1, wherein said etching step is conducted by forming a plasma between a pair of electrodes arranged in parallel.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-10-17 | 1998-04-18 | 1998-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-17 | 2002-04-18 | 2002-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-17 | 2006-04-18 | 2006-10-18 | $7700.00 | Window Closed / Lapsed |