EP0174249A1
Expired / Lapsed
EP
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A dry etching method for a chromium or chromium oxide film
Assignee: Fujitsu Ltd
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Filing: 1985-08-23
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Granted: —
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Expires: 2005-08-23
Abstract
Abstract The dry etching rate of a Cr film has been increased by adding ethyl or methyl alcohol vapor to an etchant gas containing a halide of a hydrocarbon such as CCl 4 and oxygen gas. The dry etching rate increase is attributed to the reduction reaction of a dry etching product, CrO 2 Cl 2 , into chemically stable CrCl 3 , the reduction reaction suppresses deposition of Cr generated by the decomposition of chemically unstable CrO 2 Cl 2 .
Inventors
- 👤 Eiichi Hoshino
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 04:33
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; C; C23; C23F; C23F4/00; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
43 words
A dry etching method for a chromium (Cr) or Cr-oxide film, characterized in that it comprises a step of subjecting a Cr or Cr-oxide film to a plasma of a gas mixture containing respective vapors of a halide of hydrocarbon and an alcohol.
Claim 2
Dependent Claim
43 words
A dry etching method for a chromium (Cr) or Cr-oxide film, characterized in that it comprises a step of subjecting a Cr or Cr-oxide film to a plasma of a gas mixture containing respective vapors of a halide of hydrocarbon and an alcohol.
Claim 3
Dependent Claim
18 words
A dry etching method as set forth in claim 1, characterized in that said halide is a chloride.
Claim 4
Dependent Claim
18 words
A dry etching method as set forth in claim 1, characterized in that said halide is a fluoride.
Claim 5
Dependent Claim
37 words
A dry etching method as set forth in claim 2, characterized in that said chloride is selected from a group consisting of CCl 4 , C 2 Cl 4 and C 2 H 2 Cl 2 .
Claim 6
Dependent Claim
25 words
A dry etching method as set forth in claim 3, characterized in that said fluoride is selected from a group consisting of CF 4 .
Claim 7
Dependent Claim
32 words
A dry etching method as set forth in claim 1, characterized in that said alcohol is selected from a group consisting of CH 3 0H and C 2 H 5 0 H.
Claim 8
Dependent Claim
38 words
A dry etching method as set forth in claim 1, characterized in that said halide vapor and said alcohol vapor are introduced into a chamber (1) and in that said plasma is generated therein through individual inlets (4,5).
Claim 9
Dependent Claim
25 words
A dry etching method as set forth in claim 1, characterized in that said Cr or Cr-oxide film is selectively masked with a resist layer.
Claim 10
Dependent Claim
19 words
A dry etching method as set forth in claim 1, characterized in that said gas mixture includes oxygen gas.
References Cited (Backward Citations)
US3951709A
Cited
US4445966A
Cited
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