Hydrogen reduction method for removing contaminants in a semiconductor ion implantation process

Claim 2

In semiconductor manufacture, an improved method of ion implantation, comprising: performing a hydrogen reduction in a process chamber maintained at a vacuum pressure by directing hydrogen gas at the substrate to a remove contaminants and oxide layers present on the substrate in order to prepare the substrate for ion implantation; maintaining the substrate under an inert vacuum environment to prevent additional contamination of the substrate; and ion implanting the substrate after the contaminants have been removed by the hydrogen reduction so that the formation of "knocks ons" is reduced.

Claim 3

The method as claimed in claim 1 and wherein the hydrogen reduction is performed using a hydrogen plasma.

Claim 4

The method as claimed in claim 2 and wherein the hydrogen plasma is generated using a radio frequency (rf) generator.

Claim 5

The method as claimed in claim 1 and wherein the hydrogen reduction is performed using a hydrogen gas heated to a temperature of over 200° C.

Claim 6

In semiconductor manufacture a method of ion implanting a substrate with ion dopants while preventing the formation of "knock ons", comprising: loading the substrate in a load lock chamber under a vacuum pressure; transporting the substrate to a hydrogen reduction chamber under a vacuum pressure; performing a hydrogen reduction within the hydrogen reduction chamber by directing a hydrogen gas at the substrate under a vacuum pressure to form volatile compounds to remove contaminants and oxide layers present on the substrate in order to prepare the substrate for ion implantation; maintaining the substrate under a vacuum environment to prevent additional contamination of the substrate; transporting the substrate under a vacuum pressure to a process chamber of an ion implanter; and ion implanting the substrate with selected dopants in the ion implant process chamber.

Claim 7

In semiconductor manufacture a method of ion implanting a substrate with ion dopants while preventing the formation of "knock ons", comprising: loading the substrate in a load lock chamber under a vacuum pressure; transporting the substrate to a hydrogen reduction chamber under a vacuum pressure; performing a hydrogen reduction within the hydrogen reduction chamber by directing a hydrogen gas at the substrate under a vacuum pressure to form volatile compounds to remove contaminants and oxide layers present on the substrate in order to prepare the substrate for ion implantation; maintaining the substrate under a vacuum environment to prevent additional contamination of the substrate; transporting the substrate under a vacuum pressure to a process chamber of an ion implanter; and ion implanting the substrate with selected dopants in the ion implant process chamber.

Claim 8

The method as claimed in claim 5 and wherein the hydrogen gas is heated to a temperature of over 200° C.

Claim 9

The method as claimed in claim 5 and wherein the hydrogen gas is a hydrogen plasma.

Claim 10

The method as claimed in claim 7 and wherein the hydrogen plasma is a low temperature, high-energy plasma generated using a radio frequency (rf) generator.

Claim 11

The method as claimed in claim 8 and wherein a hydrogen source for the hydrogen plasma is H 2 mixed with an inert carrier gas.

Claim 12

The method as claimed in claim 8 and wherein a hydrogen source for the hydrogen plasma is a gaseous hydrogen compound.

Claim 13

The method as claimed in claim 5 and wherein the hydrogen reduction chamber is a sputter etch chamber.

Claim 14

The method as claimed in claim 5 and wherein the hydrogen reduction step removes contaminants selected from the group consisting of carbon, carbon dioxide, oxygen, sulfur, phosphorus, boron, H 2 O, and native oxides.

Claim 15

The method as claimed in claim 5 and wherein the method is performed in a closed system with the load lock chamber, the hydrogen reduction chamber and the ion implant process chamber connected by sealed transport channels.

Claim 16

In semiconductor manufacture an improved method of ion implantation in which contaminants and thin oxide layers are removed from a semiconductor wafer and the formation of "knocks ons" in a crystal lattice of the wafer is prevented, said method comprising: loading a wafer into a vacuum load lock chamber; transporting the wafer under vacuum pressure to a hydrogen reduction chamber; generating a hydrogen plasma within the hydrogen reduction chamber under vacuum pressure and directing the hydrogen plasma at the wafer to form volatile hydrides and remove contaminants and oxide layers present on the wafer in order to prepare the wafer for ion implantation; maintaining the wafer under a vacuum environment to prevent additional contamination of the wafer; transporting the wafer under vacuum pressure to a process chamber of an ion implanter; and ion implanting the wafer with selected ion dopants.

Claim 17

In semiconductor manufacture an improved method of ion implantation in which contaminants and thin oxide layers are removed from a semiconductor wafer and the formation of "knocks ons" in a crystal lattice of the wafer is prevented, said method comprising: loading a wafer into a vacuum load lock chamber; transporting the wafer under vacuum pressure to a hydrogen reduction chamber; generating a hydrogen plasma within the hydrogen reduction chamber under vacuum pressure and directing the hydrogen plasma at the wafer to form volatile hydrides and remove contaminants and oxide layers present on the wafer in order to prepare the wafer for ion implantation; maintaining the wafer under a vacuum environment to prevent additional contamination of the wafer; transporting the wafer under vacuum pressure to a process chamber of an ion implanter; and ion implanting the wafer with selected ion dopants.

Claim 18

The method as claimed in claim 14 and wherein the hydrogen plasma is generated using a radio frequency (rf) generator and the wafer is held in the hydrogen reduction chamber on a grounded holder.

Claim 19

The method as claimed in claim 15 and wherein the method is carried out in a closed system having sealed transport chambers for transporting the wafer between the load lock chamber, the hydrogen reduction chamber and the ion implant process chamber.

Claim 20

The method as claimed in claim 16 and wherein a hydrogen source for the hydrogen plasma is H 2 combined with an inert carrier gas.

Claim 21

The method as claimed in claim 16 and wherein a hydrogen source for the hydrogen plasma is a hydrogen compound.

Claim 22

The method as claimed in claim 16 and wherein the hydrogen reduction removes contaminants selected from the group consisting of carbon, carbon dioxide, oxygen, sulfur, phosphorus, boron, H 2 O and native oxides.