US4706870A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Controlled chemical reduction of surface film
Assignee: NXP USA Inc
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Filing: 1986-10-23
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Granted: 1987-11-17
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Expires: 2006-10-23
Abstract
Abstract A process is disclosed for applying an electrical contact to the surface of a semiconductor device. A layer of metal selected from metals such as nickel, silver, copper, or alloys of these metals contacts a selected surface region of the device. A metallic contact is then soldered or otherwise joined to the layer of metal. To facilitate the joining, any native oxide present on the surface of the metal layer is first reduced by the low energy implantation of hydrogen ions into the metal surface.
Inventors
- 👤 Ronald N. Legge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:29
CPC Classifications
H; H10; H10W; H10W99/00; C; C23; C23G; C23G5/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
72 words
A process for applying an electrical contact to the surface of a semiconductor device which comprises the steps of: forming a layer of metal contacting said surface, said metal selected from metals having an easily reducible oxide; implanting ions consisting solely of hydrogen ions into said layer of metal to reduce any oxides formed thereon without substantially heating said layer of metal; and soldering a metallic contact to said layer of metal.
Claim 2
Dependent Claim
72 words
A process for applying an electrical contact to the surface of a semiconductor device which comprises the steps of: forming a layer of metal contacting said surface, said metal selected from metals having an easily reducible oxide; implanting ions consisting solely of hydrogen ions into said layer of metal to reduce any oxides formed thereon without substantially heating said layer of metal; and soldering a metallic contact to said layer of metal.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein said metal is selected from the group consisting of nickel, copper, silver, and alloys thereof.
Claim 4
Dependent Claim
20 words
The process of claim 1 wherein said hydrogen ions are implanted at a voltage of less than about 5 Kv.
Claim 5
Dependent Claim
17 words
The process of claim 1 wherein more than 10 17 hydrogen ions per square centimeter are implanted.
Claim 6
Dependent Claim
21 words
The process of claim 2 wherein said metal comprises nickel and said step of soldering comprises use of a lead-tin solder.
Claim 7
Dependent Claim
16 words
The process of claim 5 wherein said step of soldering comprises soldering in an inert ambient.
Claim 8
Dependent Claim
93 words
A process for fabricating a photovoltaic cell which comprises the steps of: providing a semiconductor substrate of a first conductivity type and having a surface; forming at said surface a region of opposite conductivity type to form a PN junction; selectively forming contact metallization contacting portions of said region; forming a nickel film overlying said contact metallization; implanting ions consisting solely of hydrogen ions into a surface layer of said nickel film at a current and energy to avoid heating of said nickel film; and soldering a metal electrode to said nickel film.
Claim 9
Dependent Claim
93 words
A process for fabricating a photovoltaic cell which comprises the steps of: providing a semiconductor substrate of a first conductivity type and having a surface; forming at said surface a region of opposite conductivity type to form a PN junction; selectively forming contact metallization contacting portions of said region; forming a nickel film overlying said contact metallization; implanting ions consisting solely of hydrogen ions into a surface layer of said nickel film at a current and energy to avoid heating of said nickel film; and soldering a metal electrode to said nickel film.
Claim 10
Dependent Claim
13 words
The process of claim 7 wherein said contact metallization comprises a metal silicide.
Claim 11
Dependent Claim
12 words
The process of claim 8 wherein said metal silicide comprises platinum silicide.
Claim 12
Dependent Claim
12 words
The process of claim 8 wherein said metal silicide comprises palladium silicide.
References Cited (Backward Citations)
US3182118A
Cited
US3665590A
Cited
SU424681A1
Cited
US3769688A
Cited
US4245768A
Cited
US4305200A
Cited
US4343830A
Cited
US4379218A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-16 | 1991-05-18 | 1991-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-16 | 1995-05-18 | 1995-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-16 | 1999-05-18 | 1999-11-17 | $7700.00 | Window Closed / Lapsed |