US3769688A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making an electrically-insulating seal between a metal body and a semiconductor device
Assignee: RCA Corp
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Filing: 1972-04-21
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Granted: 1973-11-06
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Expires: 1992-04-21
Abstract
Abstract A metal body is sealed to a semiconductor device by producing an insulator layer on a surface of the device, producing a semiconductor layer on the insulator layer, and bonding a surface of the body to the semiconductor layer. Preferably, an oxide layer is grown on the device surface, and a silicon layer is deposited on the oxide layer.
Inventors
- 👤 S Kessler
- 👤 R Keller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:43
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
99 words
A method of making an electrically insulating seal between a solderable-metal body and a silicon semiconductor device, comprising the steps of: a. producing an oxide layer on a surface of the device; b. producing a silicon layer on the oxide layer; c. producing a transition layer on the silicon layer, the transition layer being made of a material selected from the group consisting of palladium and platinum; d. producing a layer of tungsten on the transition layer; e. producing a layer of nickel on the tungsten layer; and f. soldering a surface of the body to the nickel layer.
References Cited (Backward Citations)
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US3231421A
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US3551997A
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US3632436A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-11-05 | 1977-05-07 | 1977-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-11-05 | 1981-05-07 | 1981-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-11-05 | 1985-05-07 | 1985-11-06 | $7700.00 | Window Closed / Lapsed |