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US3686748A Expired / Lapsed US ⏱️ 0.0 years remaining

Method and apparatus for providng thermal contact and electrical isolation of integrated circuits

Assignee: Individual
•
Filing: 1970-04-13
•
Granted: 1972-08-29
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Expires: 1990-04-13
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Abstract

Abstract A method and apparatus for providing electrical isolation between integrated circuits and a common high thermal conduction path to a heat sink are described. The method comprises providing an insulating film over the surface of a semiconductor wafer containing integrated circuits, forming a layer of high thermal conductivity material over the insulating film, selectively removing portions of the high thermal conductivity layer and the insulating film in regions between individual integrated circuits, selectively removing the semiconductor material from between integrated circuit elements and providing a low thermal resistance path between the high thermal conductivity layer and a suitable heat sink.

Inventors

  • 👤 William E Engeler
  • 👤 Dale M Brown

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 05:20
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/10; H10P; H10P95/00; H10W10/00; H10W10/01; H10W10/021; H10W10/20; H10W40/20; H10W40/25; H10W40/258; H10W70/00; H10W70/60; H10W70/611; H10W72/00; H10W72/30; H10P72/00; H10P72/70; H10P72/74; H10P72/7426; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 98 words
A method for providing electrical isolation between integrated circuit elements formed on one surface of a semiconductor substrate while providing a common thermal conductivity path to a heat sink, said method comprising: depositing an insulating film over said one surface of said substrate including said integrated circuit elements; forming a layer of a thermally conducting material over said insulating film; removing selected portions of the semiconductor substrate material from between integrated circuit elements to provide electrical isolation therebetween and to expose electrical leads for contacting said circuit elements; and bonding said thermally conducting material to said heat sink.
Claim 2
Independent Claim 98 words
A method for providing electrical isolation between integrated circuit elements formed on one surface of a semiconductor substrate while providing a common thermal conductivity path to a heat sink, said method comprising: depositing an insulating film over said one surface of said substrate including said integrated circuit elements; forming a layer of a thermally conducting material over said insulating film; removing selected portions of the semiconductor substrate material from between integrated circuit elements to provide electrical isolation therebetween and to expose electrical leads for contacting said circuit elements; and bonding said thermally conducting material to said heat sink.
Claim 3
Dependent Claim 20 words
The method of claim 1 wherein said insulating film has a thickness in the range of 2,000 to 5,000 Angstroms.
Claim 4
Dependent Claim 13 words
The method of claim 1 wherein said high thermal conductivity material is metallic.
Claim 5
Dependent Claim 26 words
The method of claim 1 wherein said high thermal conductivity material is selected from the group consisting of molybdenum, tungsten and alloys of molybdenum and tungsten.
Claim 6
Dependent Claim 19 words
The method of claim 1 wherein said selected portions of said semiconductor substrate are removed by photolithographic etching thereof.
Claim 7
Dependent Claim 28 words
The method of claim 1 wherein said insulatIng film is selected from the group consisting of silicon nitride, silicon dioxide and combinations of silicon nitride and silicon dioxide.
Claim 8
Dependent Claim 28 words
The method of claim 1 wherein the step of removing selected portions of the semiconductor substrate is followed by encapsulating the integrated circuit elements with a protective coating.

References Cited (Backward Citations)

US3228104A Cited
US3366793A Cited
US3414968A Cited
US3343255A Cited
US3453722A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1975-08-29 1976-02-28 1976-08-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1979-08-29 1980-02-28 1980-08-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1983-08-29 1984-02-28 1984-08-29 $7700.00 Window Closed / Lapsed

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