Patent US3686748A successfully refreshed from Google Patents.
US3686748A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for providng thermal contact and electrical isolation of integrated circuits
Assignee: Individual
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Filing: 1970-04-13
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Granted: 1972-08-29
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Expires: 1990-04-13
Abstract
Abstract A method and apparatus for providing electrical isolation between integrated circuits and a common high thermal conduction path to a heat sink are described. The method comprises providing an insulating film over the surface of a semiconductor wafer containing integrated circuits, forming a layer of high thermal conductivity material over the insulating film, selectively removing portions of the high thermal conductivity layer and the insulating film in regions between individual integrated circuits, selectively removing the semiconductor material from between integrated circuit elements and providing a low thermal resistance path between the high thermal conductivity layer and a suitable heat sink.
Inventors
- 👤 William E Engeler
- 👤 Dale M Brown
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 07:15
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/10; H10P; H10P95/00; H10W10/00; H10W10/01; H10W10/021; H10W10/20; H10W40/20; H10W40/25; H10W40/258; H10W70/00; H10W70/60; H10W70/611; H10W72/00; H10W72/30; H10P72/00; H10P72/70; H10P72/74; H10P72/7426; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
98 words
A method for providing electrical isolation between integrated circuit elements formed on one surface of a semiconductor substrate while providing a common thermal conductivity path to a heat sink, said method comprising: depositing an insulating film over said one surface of said substrate including said integrated circuit elements; forming a layer of a thermally conducting material over said insulating film; removing selected portions of the semiconductor substrate material from between integrated circuit elements to provide electrical isolation therebetween and to expose electrical leads for contacting said circuit elements; and bonding said thermally conducting material to said heat sink.
Claim 2
Independent Claim
98 words
A method for providing electrical isolation between integrated circuit elements formed on one surface of a semiconductor substrate while providing a common thermal conductivity path to a heat sink, said method comprising: depositing an insulating film over said one surface of said substrate including said integrated circuit elements; forming a layer of a thermally conducting material over said insulating film; removing selected portions of the semiconductor substrate material from between integrated circuit elements to provide electrical isolation therebetween and to expose electrical leads for contacting said circuit elements; and bonding said thermally conducting material to said heat sink.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein said insulating film has a thickness in the range of 2,000 to 5,000 Angstroms.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein said high thermal conductivity material is metallic.
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein said high thermal conductivity material is selected from the group consisting of molybdenum, tungsten and alloys of molybdenum and tungsten.
Claim 6
Dependent Claim
19 words
The method of claim 1 wherein said selected portions of said semiconductor substrate are removed by photolithographic etching thereof.
Claim 7
Dependent Claim
28 words
The method of claim 1 wherein said insulatIng film is selected from the group consisting of silicon nitride, silicon dioxide and combinations of silicon nitride and silicon dioxide.
Claim 8
Dependent Claim
28 words
The method of claim 1 wherein the step of removing selected portions of the semiconductor substrate is followed by encapsulating the integrated circuit elements with a protective coating.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-08-29 | 1976-02-28 | 1976-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-08-29 | 1980-02-28 | 1980-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-08-29 | 1984-02-28 | 1984-08-29 | $7700.00 | Window Closed / Lapsed |