US5350934A
Expired / Lapsed
US
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Conductivity modulation type insulated gate field effect transistor
Assignee: Toshiba Corp
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Filing: 1993-03-04
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Granted: 1994-09-27
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Expires: 2013-03-04
Abstract
Abstract A conductivity modulation type field effect transistor comprises an n - type low concentration impurity layer of high resistance formed on an n + type silicon substrate, a first channel region of a given width formed on the low concentration impurity layer, a pair of p type gates oppositely formed with the first channel region therebetween, an n - type low concentration impurity layer formed on the first channel region including the p + gate, a p channel layer including two channel regions formed on the n - type low concentration impurity layer, and a pair of n + type sources formed on the second channel region with their center aligned with a center of the first gate means, in which, after the formation of the n + type source, a groove is formed at each side of a respective semiconductor device, first gate electrodes are provided on the bottom surface and side wall of the groove with a gate oxide film therebetween whereby the transistor has the blocking capability of achieving a normally OFF state.
Inventors
- 👤 Tadashi Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:24
CPC Classifications
H; H10; H10D; H10D12/00; H10D30/00; H10D30/60; H10D30/601; H10D30/64; H10D30/66; H10D30/668; H10D64/00; H10D64/60; H10D64/62; H10D30/611; H10D30/615
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
245 words
A conductivity modulation type insulated gate field effect transistor comprising: a semiconductor substrate of a first conductivity type; a first low concentration impurity layer of the first conductivity type formed on one major surface of the semiconductor substrate; a pair of first gates oppositely formed in the first low concentration impurity layer, with a first channel region of a given width therebetween, and having a high concentration impurity of a second conductivity type; a second low concentration impurity layer of the first conductivity type formed over the first channel region and first gates; a second channel region of the second conductivity type formed on the second low concentration impurity layer; a pair of sources oppositely formed in the second channel region with their center aligned with a center of the first gates, each of said sources being formed of a high concentration impurity layer of the first conductivity type; a pair of gate oxide films which are oppositely formed, said gate oxide films surrounding the sources, second channel region, and second low concentration impurity layer and partially sandwiching the first gates therebetween; a pair of second gate electrodes formed on the gate oxide films, respectively; a pair of first gate electrodes formed in ohmic contact with the first gates, respectively; a source electrode formed in ohmic contact with each of said sources and second channel region; and a drain electrode formed on the other major surface of the semiconductor substrate in an ohmic contact fashion.
Claim 2
Dependent Claim
245 words
A conductivity modulation type insulated gate field effect transistor comprising: a semiconductor substrate of a first conductivity type; a first low concentration impurity layer of the first conductivity type formed on one major surface of the semiconductor substrate; a pair of first gates oppositely formed in the first low concentration impurity layer, with a first channel region of a given width therebetween, and having a high concentration impurity of a second conductivity type; a second low concentration impurity layer of the first conductivity type formed over the first channel region and first gates; a second channel region of the second conductivity type formed on the second low concentration impurity layer; a pair of sources oppositely formed in the second channel region with their center aligned with a center of the first gates, each of said sources being formed of a high concentration impurity layer of the first conductivity type; a pair of gate oxide films which are oppositely formed, said gate oxide films surrounding the sources, second channel region, and second low concentration impurity layer and partially sandwiching the first gates therebetween; a pair of second gate electrodes formed on the gate oxide films, respectively; a pair of first gate electrodes formed in ohmic contact with the first gates, respectively; a source electrode formed in ohmic contact with each of said sources and second channel region; and a drain electrode formed on the other major surface of the semiconductor substrate in an ohmic contact fashion.
Claim 3
Dependent Claim
246 words
A conductivity modulation type insulated gate field effect transistor comprising: a semiconductor substrate of a first conductivity type; first low concentration impurity layer of the first conductivity type formed on one major surface of the semiconductor substrate; a pair of first gates oppositely formed in the first low concentration impurity layer, with a first channel region of a given width therebetween, and having a high concentration impurity of a second conductivity type; a pair of first gate electrodes formed in ohmic contact with the first gates, respectively; a second low concentration impurity layer of the first conductivity type formed over the first channel region and first gates; a second channel region of the second conductivity type formed on the second low concentration impurity layer; a pair of sources oppositely formed in the second channel region with their center aligned with a center of the first gates, each of said sources being formed of a high concentration impurity layer of the first conductivity type; a pair of gate oxide films which are oppositely formed, said gate oxide films surrounding a projected stacked layer structure which is formed of each of said sources, second channel region and second low concentration impurity layer; a pair of second gate electrodes formed on the gate oxide films, respectively; a source electrode formed in ohmic contact with the sources and second channel region; and a drain electrode formed on the other major surface of the semiconductor substrate in an ohmic contact fashion.
Claim 4
Dependent Claim
246 words
A conductivity modulation type insulated gate field effect transistor comprising: a semiconductor substrate of a first conductivity type; first low concentration impurity layer of the first conductivity type formed on one major surface of the semiconductor substrate; a pair of first gates oppositely formed in the first low concentration impurity layer, with a first channel region of a given width therebetween, and having a high concentration impurity of a second conductivity type; a pair of first gate electrodes formed in ohmic contact with the first gates, respectively; a second low concentration impurity layer of the first conductivity type formed over the first channel region and first gates; a second channel region of the second conductivity type formed on the second low concentration impurity layer; a pair of sources oppositely formed in the second channel region with their center aligned with a center of the first gates, each of said sources being formed of a high concentration impurity layer of the first conductivity type; a pair of gate oxide films which are oppositely formed, said gate oxide films surrounding a projected stacked layer structure which is formed of each of said sources, second channel region and second low concentration impurity layer; a pair of second gate electrodes formed on the gate oxide films, respectively; a source electrode formed in ohmic contact with the sources and second channel region; and a drain electrode formed on the other major surface of the semiconductor substrate in an ohmic contact fashion.
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