Patent US5336356A successfully refreshed from Google Patents.
US5336356A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for treating the surface of a semiconductor substrate
Assignee: Renesas Electronics Corp
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Filing: 1992-07-17
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Granted: 1994-08-09
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Expires: 2012-07-17
Abstract
Abstract In an apparatus for treating the surface of a semiconductor substrate, hydrogen fluoride is dissolved in a nonaqueous solvent, ionizing anhydrous hydrogen fluoride, and the solution is vaporized. The vapor of the solution is introduced onto the surface of the semiconductor in a reaction chamber to treat this surface. The semiconductor substrate can be subjected to treatments, such as cleaning and etching, without producing reactions products on the surface.
Inventors
- 👤 Cozy Ban
- 👤 Toshiaki Ohmori
- 👤 Takaaki Fukumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 06:35
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12; H10P70/125
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
241 words
An apparatus for treating a surface of a semiconductor substrate comprising: means for supplying hydrogen fluoride gas; means for supplying a vapor of a nonaqueous solvent; a gas mixing device for mixing the hydrogen fluoride gas with the vapor of the nonaqueous solvent to form a hydrogen fluoride solution vapor; a reaction chamber for containing a semiconductor substrate and to which the hydrogen fluoride solution vapor is supplied from said gas mixing device; means for supplying a carrier gas for carrying the hydrogen fluoride gas and the vapor of the nonaqueous solvent to said gas mixing device and for carrying the hydrogen fluoride solution vapor from said gas mixing device to said reaction chamber; measurement means for measuring the pressure, temperature, and concentration of the hydrogen fluoride solution vapor in said reaction chamber; means for measuring the thickness of a film on a surface of a semiconductor substrate disposed in said reaction chamber; means for adjustably exhausting gas from said reaction chamber; and system control means for controlling the quantity of the hydrogen fluoride gas supplied to said gas mixing device, the quantity of the vapor of the nonaqueous solvent supplied to said gas mixing device, the quantity of the carrier gas supplied, and the quantity of gas exhausted by said means for adjustably exhausting in response to pressure, temperature, and concentration measured by said measurement means and the thickness of the film measured by said means for measuring the thickness.
Claim 2
Independent Claim
241 words
An apparatus for treating a surface of a semiconductor substrate comprising: means for supplying hydrogen fluoride gas; means for supplying a vapor of a nonaqueous solvent; a gas mixing device for mixing the hydrogen fluoride gas with the vapor of the nonaqueous solvent to form a hydrogen fluoride solution vapor; a reaction chamber for containing a semiconductor substrate and to which the hydrogen fluoride solution vapor is supplied from said gas mixing device; means for supplying a carrier gas for carrying the hydrogen fluoride gas and the vapor of the nonaqueous solvent to said gas mixing device and for carrying the hydrogen fluoride solution vapor from said gas mixing device to said reaction chamber; measurement means for measuring the pressure, temperature, and concentration of the hydrogen fluoride solution vapor in said reaction chamber; means for measuring the thickness of a film on a surface of a semiconductor substrate disposed in said reaction chamber; means for adjustably exhausting gas from said reaction chamber; and system control means for controlling the quantity of the hydrogen fluoride gas supplied to said gas mixing device, the quantity of the vapor of the nonaqueous solvent supplied to said gas mixing device, the quantity of the carrier gas supplied, and the quantity of gas exhausted by said means for adjustably exhausting in response to pressure, temperature, and concentration measured by said measurement means and the thickness of the film measured by said means for measuring the thickness.
Claim 3
Dependent Claim
28 words
An apparatus as claimed in claim 1 wherein said control means stops the supply of the hydrogen fluoride solution vapor when the film thickness reaches a prescribed thickness.
Claim 4
Dependent Claim
40 words
An apparatus as claimed in claim 1 wherein the means for measuring the thickness comprises an ellipsometer mounted on said reaction chamber for monitoring the film thickness as the hydrogen fluoride solution vapor is being supplied to said reaction chamber.
Claim 5
Independent Claim
145 words
An apparatus for treating a surface of a semiconductor substrate comprising: means for supplying hydrogen fluoride solution vapor; a reaction chamber for containing a semiconductor substrate; means for supplying a carrier gas for carrying a vapor of the hydrogen fluoride solution to said reaction chamber; measurement means for measuring the pressure, temperature, and concentration of the hydrogen fluoride solution vapor in said reaction chamber; means for measuring the thickness of a film on a surface of a semiconductor substrate disposed in said reaction chamber; means for adjustably exhausting gas from said reaction chamber; and system control means for controlling the quantity of the hydrogen fluoride solution vapor supplied, the quantity of the carrier gas supplied, and the quantity of gas exhausted in response to pressure, temperature, and concentration measured by said measurement means and the thickness of the film measured by said means for measuring.
Claim 6
Independent Claim
145 words
An apparatus for treating a surface of a semiconductor substrate comprising: means for supplying hydrogen fluoride solution vapor; a reaction chamber for containing a semiconductor substrate; means for supplying a carrier gas for carrying a vapor of the hydrogen fluoride solution to said reaction chamber; measurement means for measuring the pressure, temperature, and concentration of the hydrogen fluoride solution vapor in said reaction chamber; means for measuring the thickness of a film on a surface of a semiconductor substrate disposed in said reaction chamber; means for adjustably exhausting gas from said reaction chamber; and system control means for controlling the quantity of the hydrogen fluoride solution vapor supplied, the quantity of the carrier gas supplied, and the quantity of gas exhausted in response to pressure, temperature, and concentration measured by said measurement means and the thickness of the film measured by said means for measuring.
References Cited (Backward Citations)
US4749440A
Cited
US5100495A
Cited
US5022961A
Cited
US5022961B1
Cited
US5173152A
Cited
US5167761A
Cited
US5112437A
Cited
US5089441A
Cited
US5089084A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-08 | 1998-02-07 | 1998-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-08 | 2002-02-07 | 2002-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-08 | 2006-02-07 | 2006-08-09 | $7700.00 | Window Closed / Lapsed |