US5334277A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same
Assignee: Nichia Corp
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Filing: 1991-10-22
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Granted: 1994-08-02
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Expires: 2011-10-22
Abstract
Abstract A method of growing in vapor phase a semiconductor crystal layer supplies a reaction gas to a portion above the surface of a heated substrate so as to be parallel or obliquely to the substrate, and uses a transparent blow tube widened toward its blow port like a funnel to blow a pressing gas, which is inert with respect to the reaction gas, toward the substrate, thereby bringing the reaction gas into contact with the surface of the substrate.
Inventors
- 👤 Shuji Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:38
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B29/00; C30B29/10; C30B29/40; C30B29/403; C30B29/406; C30B29/42
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
91 words
A method of vapor-growing a gallium nitride group semiconductor crystal layer using a metal organic chemical vapor deposition method, comprising the steps of: heating the substrate; supplying a reaction gas to a surface of the heated substrate so as to be parallel or obliquely to said substrate; blowing a pressing gas by using a blow tube widened toward a blow port, substantially in a vertical direction toward said substrate to bring said reaction gas into contact with the surface of said substrate; each of said step being performed under atmospheric pressure.
Claim 2
Independent Claim
91 words
A method of vapor-growing a gallium nitride group semiconductor crystal layer using a metal organic chemical vapor deposition method, comprising the steps of: heating the substrate; supplying a reaction gas to a surface of the heated substrate so as to be parallel or obliquely to said substrate; blowing a pressing gas by using a blow tube widened toward a blow port, substantially in a vertical direction toward said substrate to bring said reaction gas into contact with the surface of said substrate; each of said step being performed under atmospheric pressure.
Claim 3
Dependent Claim
22 words
A method according to claim 1, wherein a gas velocity of said pressing gas on the substrate is 0.02 to 0.5 m/s.
Claim 4
Dependent Claim
28 words
A method according to claim 1, wherein the gallium nitride group compound is represented by the general formula Ga 1-x-y Al x In y N, wherein 0≦x≦1, 0≦y≦1.
Claim 5
Dependent Claim
38 words
A method according to claim 1, wherein said blow tube has a funnel-like portion and is widened toward said blow port by an angle of not more than 20° with respect to an axis of said blow tube.
Claim 6
Dependent Claim
37 words
A method according to claim 1, wherein said blow tube has a funnel-like portion and is funnel-shaped and is widened by an angle of not more than 10° with respect to an axis of said blow tube.
Claim 7
Dependent Claim
30 words
A method according to claim 1 wherein said reaction gas is selected from the group consisting of trimethylgallium (TMG), trimethylaluminum (TMA), diethylzinc (DEZ), trimethylindium (TMI) and ammonia (NH 3 ).
Claim 8
Dependent Claim
30 words
A method according to claim 1, wherein said pressing gas is selected from the group consisting of H 2 , N 2 , NH 3 , He, Ne, and Ar.
Claim 9
Dependent Claim
19 words
A method according to claim 1, wherein the substrate is heated to a temperature of 1000° C. or more.
Claim 10
Independent Claim
81 words
A method of vapor-growing a gallium nitride group compound semiconductor crystal layer using metal organic chemical vapor deposition method, comprising the steps of: heating the substrate; supplying a reaction gas to a surface of the heated substrate so as to be parallel or obliquely to said substrate; blowing a pressing gas substantially in a vertical direction toward said substrate to bring said reaction gas into contact with the surface of said substrate; each of said step being performed under atmospheric pressure.
Claim 11
Independent Claim
81 words
A method of vapor-growing a gallium nitride group compound semiconductor crystal layer using metal organic chemical vapor deposition method, comprising the steps of: heating the substrate; supplying a reaction gas to a surface of the heated substrate so as to be parallel or obliquely to said substrate; blowing a pressing gas substantially in a vertical direction toward said substrate to bring said reaction gas into contact with the surface of said substrate; each of said step being performed under atmospheric pressure.
Claim 12
Dependent Claim
18 words
A method according to claim 9, wherein said gas is blown by a blow tube having an opening.
Claim 13
Dependent Claim
15 words
A method according to claim 9, wherein said semiconductor is a gallium nitride group compound.
Claim 14
Dependent Claim
22 words
A method according to claim 9, wherein a gas velocity of the pressing gas on said substrate is 0.02 to 0.5 m/s.
Claim 15
Dependent Claim
27 words
A method according to claim 10, wherein the gallium nitride group compound is represented by the general Ga 1-x-y Al x In y N, wherein 0≦x≦1, 0≦y≦1.
Claim 16
Dependent Claim
30 words
A method according to claim 9, wherein said reaction gas is selected from the group consisting of trimethylgallium (TMG), trimethylaluminum (TMA), diethylzinc (DEZ), trimethylindium (TMI), and ammonia (NH 3 ).
Claim 17
Dependent Claim
25 words
A method according to claim 14, wherein said blow tube is transparent, and vapor-growth of a semiconductor crystal film is observed through said blow tube.
Claim 18
Dependent Claim
20 words
A method according to claim 15, further comprising the step of radiating light on said substrate through said blow tube.
Claim 19
Dependent Claim
30 words
A method according to claim 9, wherein said pressing gas is selected from the group consisting of H 2 , N 2 , NH 3 , He, Ne, and Ar.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-08-01 | 1998-01-31 | 1998-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-01 | 2002-01-31 | 2002-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-01 | 2006-01-31 | 2006-08-02 | $7700.00 | Window Closed / Lapsed |