Patent US5332910A successfully refreshed from Google Patents.
US5332910A
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Semiconductor optical device with nanowhiskers
Assignee: Opnext Japan Inc
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Filing: 1993-11-30
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Granted: 1994-07-26
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Expires: 2013-11-30
Abstract
Abstract A semiconductor light-emitting device includes a plurality of semiconductor rods, each of which has a pn junction. The semiconductor rods are formed on a semiconductor substrate such that the plurality of semiconductor rods are arranged at a distance substantially equal to an integer multiple of the wavelength of light emitted from the semiconductor rod. With such devices, various novel optical devices such as a micro-cavity laser of which the threshold current is extremely small and a coherent light-emitting device having no threshold value can be realized.
Inventors
- 👤 Keiichi Haraguchi
- 👤 Kenji Hiruma
- 👤 Kensuke Ogawa
- 👤 Toshio Katsuyama
- 👤 Ken Yamaguchi
- 👤 Toshiyuki Usagawa
- 👤 Masamits Yazawa
- 👤 Toshiaki Masuhara
- 👤 Gerard P. Morgan
- 👤 Hiroshi Kakibayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:03
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/819; H10H20/821; B; B82; B82Y; B82Y20/00; G; G02; G02B; G02B6/00; G02B6/24; G02B6/42; G02B6/4201; G02B6/4202; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H01S5/1228; H01S5/18; H01S5/183; H01S5/40; H01S5/4025; H01S5/4031; H10H20/01; H10H20/011; H10H20/013; H01S3/00; H01S3/05; H01S3/06; H01S3/063; H01S3/067; H01S3/06708; H01S5/0014; H01S5/0028; H01S5/02; H01S5/0206; H01S5/0217; H01S5/04; H01S5/042; H01S5/0425; H01S5/04252; H01S5/04253; H01S5/04254; H01S5/04256; H01S5/06; H01S5/0607; H01S5/0608; H01S5/1042; H01S5/11; H01S5/20; H01S5/22; H01S5/223; H01S5/30; H01S5/32; H01S5/3202; H01S5/34; H01S5/341; H01S5/3412; H01S5/4006; H01S5/4056; H01S5/42; H01S5/423; H01S5/50; H01S5/5045
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
122 words
A semiconductor optical device comprising: a semiconductor substrate; a plurality of semiconductor nanowhiskers each having a pn junction, formed on a main surface of said semiconductor substrate in the direction substantially perpendicular to said main surface, said plurality of semiconductor nanowhiskers each having a first conductivity type region and a second conductivity type region; a first electrode electrically connected with said first conductivity type regions of said semiconductor nanowhiskers; and a second electrode electrically connected with said second conductivity type regions of said semiconductor nanowhiskers; wherein at least a portion of said plurality of semiconductor nanowhiskers are arranged at substantially equal distances; and wherein desired semiconductor nanowhiskers can be selectively operated by selectively applying power or potential to the desired semiconductor nanowhiskers,
Claim 2
Dependent Claim
122 words
A semiconductor optical device comprising: a semiconductor substrate; a plurality of semiconductor nanowhiskers each having a pn junction, formed on a main surface of said semiconductor substrate in the direction substantially perpendicular to said main surface, said plurality of semiconductor nanowhiskers each having a first conductivity type region and a second conductivity type region; a first electrode electrically connected with said first conductivity type regions of said semiconductor nanowhiskers; and a second electrode electrically connected with said second conductivity type regions of said semiconductor nanowhiskers; wherein at least a portion of said plurality of semiconductor nanowhiskers are arranged at substantially equal distances; and wherein desired semiconductor nanowhiskers can be selectively operated by selectively applying power or potential to the desired semiconductor nanowhiskers,
Claim 3
Dependent Claim
43 words
A semiconductor optical device according to claim 1, wherein a portion of said plurality of semiconductor nanowhiskers are arranged at a first distance and the remainder of said semiconductor nanowhiskers are arranged at a second distance which is different from the first distance.
Claim 4
Dependent Claim
26 words
A semiconductor optical device according to claim 1, wherein said semiconductor nanowhiskers are single-crystalline nanowhiskers grown on the surface of said semiconductor substrate by epitaxial growth.
Claim 5
Dependent Claim
27 words
A semiconductor optical device according to claim 3, wherein diameters of said semiconductor nanowhiskers periodically change according to the position along the length of said semiconductor nanowhiskers.
Claim 6
Dependent Claim
36 words
A semiconductor optical device according to claim 1, wherein the distance between said semiconductor nanowhiskers adjoining each other is equal to an integral multiple of one-half of a wavelength of light emitted from said semiconductor nanowhiskers.
Claim 7
Dependent Claim
38 words
A semiconductor optical device according to claim 5, wherein the distance between said semiconductor nanowhiskers adjoining each other is substantially different from the wavelength of second light emitted in the direction different from the direction of said light.
Claim 8
Dependent Claim
25 words
A semiconductor optical device according to claim 1, wherein an i-type region is sandwiched between the p-type regions and n-type regions of said semiconductor nanowhiskers.
Claim 9
Dependent Claim
24 words
A semiconductor optical device according to claim 1, wherein said semiconductor nanowhiskers are formed of the same material as that of said semiconductor substrate.
Claim 10
Dependent Claim
13 words
A semiconductor optical device according to claim 8, wherein said material is GaAs.
Claim 11
Dependent Claim
21 words
A semiconductor optical device according to claim 1, wherein said semiconductor substrate and said semiconductor nanowhiskers are formed of different materials.
Claim 12
Dependent Claim
22 words
A semiconductor optical device according to claim 10, wherein said semiconductor substrate is formed of GaAs and said semiconductor nanowhiskers include GaAlAs.
Claim 13
Dependent Claim
15 words
A semiconductor optical device according to claim 11, wherein said semiconductor nanowhiskers further include InGaAs.
Claim 14
Dependent Claim
22 words
A semiconductor optical device according to claim 10, wherein said semiconductor substrate is formed of InP and said semiconductor nanowhiskers include InGaAs.
Claim 15
Dependent Claim
24 words
A semiconductor optical device according to claim 1, wherein diameters of said semiconductor nanowhiskers on said semiconductor substrate are not larger than 1,000 nm.
Claim 16
Dependent Claim
22 words
A semiconductor optical device according to claim 1, wherein the crystalline orientation of said semiconductor nanowhiskers in a longitudinal direction is (111).
Claim 17
Dependent Claim
24 words
A semiconductor optical device according to claim 5, wherein said plurality of semiconductor nanowhiskers are arranged one-dimensionally on the surface of said semiconductor substrate.
Claim 18
Dependent Claim
24 words
A semiconductor optical device according to claim 5, wherein said plurality of semiconductor nanowhiskers are arranged two-dimensionally on the surface of said semiconductor substrate.
Claim 19
Dependent Claim
28 words
A semiconductor optical device according to claim 17, wherein said plurality of semiconductor nanowhiskers are arranged in a regular polygon configuration on the surface of said semiconductor substrate.
Claim 20
Dependent Claim
22 words
A semiconductor optical device according to claim 1, wherein said first electrode is formed on a rear surface of said semiconductor substrate.
Claim 21
Dependent Claim
22 words
A semiconductor optical device according to claim 1, wherein said first electrode is formed on said main surface of said semiconductor substrate.
Claim 22
Dependent Claim
22 words
A semiconductor optical device according to claim 1, wherein said second electrode is connected with upper edge portions of said semiconductor nanowhiskers.
Claim 23
Dependent Claim
22 words
A semiconductor optical device according to claim 21, wherein an insulating film is disposed between said semiconductor substrate and said second electrode.
Claim 24
Dependent Claim
33 words
A semiconductor optical device according to claim 1, wherein a plurality of line-shaped second electrodes are connected with said second conductivity type regions of desired portions of a plurality of said semiconductor nanowhiskers.
Claim 25
Dependent Claim
51 words
A semiconductor optical device according to claim 23, wherein a plurality of line-shaped first electrodes are disposed substantially perpendicular with respect to said first electrode on the main surface of said semiconductor substrate in contact with said first conductivity type regions of desired portions of a plurality of said semiconductor nanowhiskers.
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