Patent EP0236099A2 successfully refreshed from Google Patents.
US4155781A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing solar cells, utilizing single-crystal whisker growth
Assignee: Siemens AG
•
Filing: 1978-04-06
•
Granted: 1979-05-22
•
Expires: 1998-04-06
Abstract
Abstract A solar cell with semiconductor body consisting of single crystal semiconductor whiskers which are grown on a substrate surface permitting relatively inexpensive manufacture and high efficiency of the solar cell is disclosed.
Inventors
- 👤 Heinrich Diepers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 10:26
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/04; C30B11/08; C30B11/12; H; H10; H10F; H10F71/00; H10F77/00; H10F77/10; H10F77/14; H10F77/147; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/279; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; H10P14/3451; H10P14/3452; H10P14/3462; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
111 words
A method for manufacturing solar cells comprising growing semiconductor whiskers on a substrate, comprising: (a) providing a substrate which favors growth or germination of whiskers; (b) depositing a plurality of localized areas of an agent in which the semiconductor material is soluble; (c) growing whiskers of said semiconductor material by means of the Vapor Liquid Solid (VLS) method at said areas; (d) doping the whiskers with one of a p or n doping material; and (e) subsequently thereto doping the surface region of said whiskers up to a depth which approximately corresponds to the diffusion length of the charge carriers pairs with the other of a P or n doping material.
Claim 2
Independent Claim
111 words
A method for manufacturing solar cells comprising growing semiconductor whiskers on a substrate, comprising: (a) providing a substrate which favors growth or germination of whiskers; (b) depositing a plurality of localized areas of an agent in which the semiconductor material is soluble; (c) growing whiskers of said semiconductor material by means of the Vapor Liquid Solid (VLS) method at said areas; (d) doping the whiskers with one of a p or n doping material; and (e) subsequently thereto doping the surface region of said whiskers up to a depth which approximately corresponds to the diffusion length of the charge carriers pairs with the other of a P or n doping material.
Claim 3
Dependent Claim
50 words
The method according to claim 1, wherein said semiconductor whiskers are of a material selected from the group consisting of a III-V compound and a ternary alloy with the partners of a III-V compound, wherein the first partner of said material is used as an agent in growing said whiskers.
Claim 4
Dependent Claim
30 words
The method according to claim 1, and further including the step of applying electrically conducting layers on the surfaces of the semiconductor whiskers by sputtering, vapor deposition or ion plating.
References Cited (Backward Citations)
US3020412A
Cited
US3150999A
Cited
US3201665A
Cited
US3278337A
Cited
US3346414A
Cited
US3581151A
Cited
US3969746A
Cited
US3984256A
Cited
US3985579A
Cited
US4101351A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-05-21 | 1982-11-20 | 1983-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-05-21 | 1986-11-20 | 1987-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-05-21 | 1990-11-20 | 1991-05-22 | $7700.00 | Window Closed / Lapsed |