Abstract Silicon solar cells may be made from either "P" type substrates with "N" type dopants to form the geometries or with "N" type substrates and "P" type dopants forming the junction. This invention relates to the dopant species employed, the improved method of application and junction formation, formation of insitu anti-reflective coatings, and improved metallization processing for silicon solar cells. The invention does not affect preparation of the silicon substrate prior to diffusion steps, and is applicable both to planar solar cells and to vertical-multijunction cells. This invention discloses an alternate process of junction formation using arsenic as dopant. The process is uniquely different in the fact that it simplifies the number of process steps by using the doped oxide for junction formation, metallization mask and as an anti-reflection surface layer.
A process for the fabrication of a solar cell comprising the steps of: (a) applying a silicon oxide-forming, arsenic-comprising, dopant source composition to a monocrystalline silicon body of p-type conductivity, said dopant source comprising a solution of an arsenic-doped reaction product obtained by refluxing tetraethylorthosilicate with acetic anhydride or acetic acid; (b) heating the resulting composite to a diffusion temperature for a time sufficient to diffuse said arsenic dopant into the silicon body, thereby forming a p-n junction, (c) selectively patterning the remaining doped silicon oxide source layer to provide apertures therein for metallization of the diffused region; (d) depositing and patterning a metal film on said patterned dopant source layer, whereby said dopant source layer is retained as an anti-reflection coating.
Claim 2
Dependent Claim
122 words
A process for the fabrication of a solar cell comprising the steps of: (a) applying a silicon oxide-forming, arsenic-comprising, dopant source composition to a monocrystalline silicon body of p-type conductivity, said dopant source comprising a solution of an arsenic-doped reaction product obtained by refluxing tetraethylorthosilicate with acetic anhydride or acetic acid; (b) heating the resulting composite to a diffusion temperature for a time sufficient to diffuse said arsenic dopant into the silicon body, thereby forming a p-n junction, (c) selectively patterning the remaining doped silicon oxide source layer to provide apertures therein for metallization of the diffused region; (d) depositing and patterning a metal film on said patterned dopant source layer, whereby said dopant source layer is retained as an anti-reflection coating.