US3915766A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Composition for use in forming a doped oxide film
Assignee: Texas Instruments Inc
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Filing: 1974-03-06
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Granted: 1975-10-28
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Expires: 1994-03-06
Abstract
Abstract A doped silicon oxide-forming film is produced on a semiconductor wafer by coating the wafer with a solution prepared by the reaction of tetraethylorthosilicate with acetic anhydride in the presence of a suitable solvent. A suitable dopant species is also contained in the solution. Upon heating the wafer to diffusion temperature, a doped oxide film is formed, and the dopant diffuses from the doped oxide film into the semiconductor.
Inventors
- 👤 Gordon P Pollack
- 👤 John G Fish
- 👤 Samuel R Shortes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:36
CPC Classifications
H; H10; H10P; H10P95/00; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P32/18; H10P32/19; H10W; H10W74/00; H10W74/40; H10W74/47; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S148/00; Y10S148/03; Y10S148/043; Y10S148/118; Y10S148/151
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
129 words
A METHOD FOR THE SOLID STATE DIFFUSION OF CONDUCTIVITY TYPE-DETERMINING IMPURITIES IN SEMICONDUCTOR COMPRISING THE STEPS OF APPLYING A DOPED OXIDE-FORMING SOLUTION TO SAID SEMICONDUCTOR, SAID SOLUTION COMPRISING A. A REACTION PRODUCT OF TERTRAETHYLORTHOSILICATE PLUS ACETIC ACID OR ACETIC ANHYDRIDE, THE MOLAR RATIO OF ACETIC ANHYDRIDE OR ACETIC ACID TO TETRAETHYLORTHOSILICATE BEING FROM ABOUT 1, 5 TO 1 UP TO 3, TO 1, B. A SUITABLE DOPANT FOR SOLID STATE DIFFUSION INTO A SEMICONDUCTOR, IN SUFFICIENT PROPORTION TO PROVIDE A RATIO OF SILCON ATOMS TO DOPANT ATOMS OF ABOUT 1, 5 TO 1 UP TO ABOUT 6 TO 1, AND 50 TO 85 PERCENT BY WEIGHT OF AN SOLVENT CAPABLES OF MAINTAINING SAID PRODUCT AND SAID DOPANT IN SOLUTION, AND THEN HEATING THE COATED SEMICONDUCTOR TO A DIFFUSION TEMPERATURE.
Claim 2
Independent Claim
129 words
A METHOD FOR THE SOLID STATE DIFFUSION OF CONDUCTIVITY TYPE-DETERMINING IMPURITIES IN SEMICONDUCTOR COMPRISING THE STEPS OF APPLYING A DOPED OXIDE-FORMING SOLUTION TO SAID SEMICONDUCTOR, SAID SOLUTION COMPRISING A. A REACTION PRODUCT OF TERTRAETHYLORTHOSILICATE PLUS ACETIC ACID OR ACETIC ANHYDRIDE, THE MOLAR RATIO OF ACETIC ANHYDRIDE OR ACETIC ACID TO TETRAETHYLORTHOSILICATE BEING FROM ABOUT 1, 5 TO 1 UP TO 3, TO 1, B. A SUITABLE DOPANT FOR SOLID STATE DIFFUSION INTO A SEMICONDUCTOR, IN SUFFICIENT PROPORTION TO PROVIDE A RATIO OF SILCON ATOMS TO DOPANT ATOMS OF ABOUT 1, 5 TO 1 UP TO ABOUT 6 TO 1, AND 50 TO 85 PERCENT BY WEIGHT OF AN SOLVENT CAPABLES OF MAINTAINING SAID PRODUCT AND SAID DOPANT IN SOLUTION, AND THEN HEATING THE COATED SEMICONDUCTOR TO A DIFFUSION TEMPERATURE.
Claim 3
Dependent Claim
11 words
A method as in claim 1 wherein said solvent is ethanol.
Claim 4
Dependent Claim
13 words
A method as in claim 2 wherein said reaction product comprises diethoxysilicon diacetate.
Claim 5
Dependent Claim
12 words
A method as in claim 3 wherein said dopant comprises boron oxide.
Claim 6
Dependent Claim
19 words
A method as in claim 3 wherein said dopant comprises a compound of boron, phosphorus, arsenic, gold or zinc.
References Cited (Backward Citations)
US3615943A
Cited
US3660156A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-10-27 | 1979-04-28 | 1979-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-10-27 | 1983-04-28 | 1983-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-10-27 | 1987-04-28 | 1987-10-28 | $7700.00 | Window Closed / Lapsed |