US5075742A
Expired / Lapsed
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Semiconductor structure for optoelectronic components with inclusions
Assignee: France Telecom R&D SA
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Filing: 1991-01-10
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Granted: 1991-12-24
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Expires: 2011-01-10
Abstract
Abstract The object of the invention is to reduce the influence of dislocations on the functioning of structures for optoelectronic component, such as laser, made from semiconductor materials. Accordingly, one of the lasers of such a structure comprises three-dimensional inclusions in a semiconductor material with a thinner forbidden band than the forbidden band of the layer material. The inclusions are e.g. distributed over several planes of the active layer of a laser, and may be in InAs introduced into a layer in GaAs.
Inventors
- 👤 Jean-Michel Gerard
- 👤 Claude Weisbuch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:14
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; B; B82; B82Y; B82Y20/00; H01S5/10; H01S5/32; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; H01S5/02; H01S5/0206; H01S5/021; H01S5/3403; H01S5/343; H01S5/34313; H01S5/3432; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
51 words
A structure having plural layers in semiconductor material, one of said layers comprising plural substantially parallel sub-layers deposited successively during growth of said one layer, each of said sub-layers having three-dimensional inclusions in a semiconductor material and a narrower forbidden band gap than a forbidden band gap of said one layer.
Claim 2
Dependent Claim
51 words
A structure having plural layers in semiconductor material, one of said layers comprising plural substantially parallel sub-layers deposited successively during growth of said one layer, each of said sub-layers having three-dimensional inclusions in a semiconductor material and a narrower forbidden band gap than a forbidden band gap of said one layer.
Claim 3
Dependent Claim
23 words
The structure claimed in claim 1, wherein the size of each of said inclusions is in the neighborhood of 50 nm 3 .
Claim 4
Dependent Claim
20 words
The structure claimed in claim 1, wherein said layer comprising said inclusions is an active layer of an optoelectronic component.
Claim 5
Dependent Claim
12 words
The structure claimed in claim 1, wherein said inclusions comprise indium arsenide.
Claim 6
Dependent Claim
23 words
The structure claimed in claim 1, wherein said layer comprising said inclusions comprises one of the following semiconductor materials: InGaAs, GaAs, GaInAsP, InGaAlAs.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-23 | 1995-06-24 | 1995-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-23 | 1999-06-24 | 1999-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-23 | 2003-06-24 | 2003-12-24 | $7700.00 | Window Closed / Lapsed |