EP0452950A2
Expired / Lapsed
EP
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Semiconductor device using whiskers and manufacturing method of the same
Assignee: Hitachi Ltd
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Filing: 1991-04-19
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Granted: —
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Expires: 2011-04-19
Abstract
Abstract A field effect transistor and a ballistic transistor using semiconductor whiskers (1) each having a desired diameter and formed at a desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed. <IMAGE>
Inventors
- 👤 Masamitsu Yazawa
- 👤 Kenji Hiruma
- 👤 Toshio Katsuyama
- 👤 Nobutaka Futigami
- 👤 Hidetoshi Matsumoto
- 👤 Hiroshi Kakibayashi
- 👤 Masanari Koguchi
- 👤 Gerard P. Morgan
- 👤 Kensuke Ogawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 02:57
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/117; H10D62/118; B; B82; B82Y; B82Y10/00; B82Y20/00; C; C30; C30B; C30B25/00; C30B25/005; C30B29/00; C30B29/10; C30B29/40; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/341; H10D30/00; H10D30/01; H10D30/012; H10D30/014; H10D30/015; H10D30/021; H10D30/202; H10D30/40; H10D30/43; H10D48/00; H10D48/01; H10D48/031; H10D48/032; H10D62/119; H10D62/121; H10D62/122; H10D62/80; H10D62/81; H10D62/812; H10D62/813; H10D8/00; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3422; H10P14/3424; H10P14/3436; H01S5/10; H01S5/1042; H10D62/85; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/817; H10H20/818; H10H29/00; H10H29/10
Claims Analysis
Total Claims: 52
Claim 1
Independent Claim
50 words
A semiconductor device, comprising: a semiconductor substrate (11) of one conductive type; and semiconductor whisker channels (1) which are grown epitaxially on said substrate (7) each having a diameter of 0.1 µm and less; wherein both ends of said whisker channels (1) are connected electrically to ohmic electrodes (3, 5).
Claim 2
Dependent Claim
20 words
A semiconductor device according to Claim 1, wherein said whisker channels (1) form a channel of a field effect transistor.
Claim 3
Dependent Claim
57 words
A semiconductor device according to Claim 2, wherein said whisker channels (1) are buried with an insulator layer (6A), a gate film (2) and an insulator layer (6B) in this order so as to surround the circumference of said whisker channels (1), and the conductive type of said substrate (11) and whisker channels (1) is an n-type.
Claim 4
Dependent Claim
35 words
A semiconductor device according to Claim 3, wherein said substrate is composed of a semi-insulating substrate (7) with an n-type GaAs layer (4) formed thereon, and said whisker channels (1) are composed of n-type InAs.
Claim 5
Dependent Claim
69 words
A semiconductor device according to Claim 2, wherein said whisker channels (1) are buried with an n-type compound semiconductor layer, a gate film and an n-type compound semiconductor layer in this order, said n-type compound semiconductor has an electron affinity smaller than that of the compound semiconductor of said whisker channels (1), the conductive type of said substrate (11) is an n-type, and said whisker channels (1) are undoped.
Claim 6
Dependent Claim
27 words
A semiconductor device according to Claims 3 to 5, wherein said gate film (2) and said whisker channels (1) are joined with each other through Schottky junction.
Claim 7
Dependent Claim
20 words
A semiconductor device according to claims 2 to 6, wherein said whisker channels (1) grow prependicularly to said substrate surface.
Claim 8
Dependent Claim
80 words
A semiconductor device according to Claim 1, wherein said whisker channels (1) form a channel of a ballistic transistor, the length thereof is 400 nm and shorter, a Schottky gate film (2) is formed on said semiconductor substrate (11) of one conductive type so as to surround said channel, the film thickness of said gate film (2) corresponds to the length of said channel, and said semiconductor substrate (11) of one conductive type is composed of an n-type compound semiconductor.
Claim 9
Dependent Claim
114 words
A semiconductor device according to Claim 1, wherein an undoped compound semiconductor layer (21) is formed between said whisker channels (1) and said semiconductor substrate (22) of one conductive type, a channel of a ballistic transistor is formed with said undoped compound semiconductor layer (21) and said whisker channels (1), the length of the channel has the lenght of 400 nm and less, a Schottky gate film (2) is formed on said undoped compound semiconductor layer (21) so as to surround said channel, the film thickness of said gate film (2) corresponds to the length of said channel, and the conductive type of said semiconductor substrate (22) of one conductive type is an n-type.
Claim 10
Dependent Claim
50 words
A semiconductor device according to Claim 8 or 9, wherein said whisker channels (1) are buried with an insulator layer at the top and the bottom of said gate film, and the whisker channels (1) projecting from the upper insulator layer are buried with a highly doped n-type semiconductor layer.
Claim 11
Dependent Claim
20 words
A semiconductor device according to Claims 8 to 10, wherein said whisker channels (1) grow perpendicularly to said substrate surface.
Claim 12
Dependent Claim
14 words
A semiconductor device, comprising a semiconductor whisker (1) acting as a semiconductor quantum wire.
Claim 13
Dependent Claim
52 words
A semiconductor device according to Claim 12, wherein said semiconductor quantum wire is formed by surrounding around the circumference of said semiconductor whiskers (1) with air or a medium having a refractive index equivalent to that of air, and the diameter of each semiconductor whisker (1) is at 0.1 µm and less.
Claim 14
Dependent Claim
21 words
A semiconductor device according to Claim 12 or 13, wherein said semiconductor quantum wire has a junction between different conductive types.
Claim 15
Dependent Claim
40 words
A semiconductor device according to Claim 12 or 13, wherein said semiconductor quantum wire crystal has a hetero junction (dissimilar junction) of semiconductors included in III - V group compound semiconductors, II - VI group compound semiconductors and element semiconductors.
Claim 16
Dependent Claim
21 words
A semiconductor device according to Claim 15, wherein said semiconductor quantum wire and a transistor are formed on the same substrate.
Claim 17
Dependent Claim
24 words
A semiconductor device, comprising grooves (82) formed on a substrate surface, and semiconductor whiskers (1) formed on the substrate surface except said grooves (82).
Claim 18
Dependent Claim
46 words
A semiconductor device having a substrate and semiconductor whiskers (1) extending from said semiconductor surface, wherein a growth direction of said semiconductor whiskers (1) is in accord with the direction (111) of atomic dangling bond extending from elements forming the substrate surface outside of the substrate.
Claim 19
Dependent Claim
43 words
A semiconductor device, comprising a substrate and a semiconductor whisker (1) formed through a mask composed of at least two layers having at least one opening portion provided on said substrate on the substrate surface exposed in the opening region of the mask.
Claim 20
Dependent Claim
34 words
A semiconductor device according to Claim 19, wherein said semiconductor whisker (1) is in contact with the substrate surface at one end thereof and is apart from the substrate surface at another end thereof.
Claim 21
Dependent Claim
25 words
A semiconductor device according to Claim 19, wherein one line and more of said semiconductor whiskers are formed in an opening portion of a mask.
Claim 22
Dependent Claim
51 words
A semiconductor device according to Claim 19, wherein in a mask opening portion in which said semiconductor whisker is formed, a first mask layer closest to the substrate is composed of an insulator and at least one layer among mask layers except said first mask layer is composed of a metal.
Claim 23
Dependent Claim
48 words
A semiconductor device according to Claim 19, wherein the wire tip of said semiconductor whisker acts as an electron emitting electrode, and the layer composed of a metal among mask layers acts as a control electrode for controlling the number of electrons emitted from said electron emitting electrode.
Claim 24
Dependent Claim
47 words
A semiconductor device consisting of a semiconductor device set forth in Claim 23 and a substrate on which a fluorescent material is adhered, wherein light emission is obtained from the substrate on which the fluorescent material is adhered by means of electrons emitted from the semiconductor device.
Claim 25
Dependent Claim
21 words
A semiconductor device according to Claim 23, wherein said semiconductor device is an electron beam source of a vacuum microelectronic device.
Claim 26
Dependent Claim
27 words
A semiconductor device, comprising an optical element in which light is emitted by applying an electric current to whisker crystals which have grown on a semiconductor substrate.
Claim 27
Dependent Claim
20 words
A semiconductor device according to Claim 26, wherein at least one electric element is formed further on said semiconductor substrate.
Claim 28
Dependent Claim
25 words
A semiconductor device, wherein a diameter of a whisker crystal is at 0.1 µm and less in the optical element set forth in Claim 26.
Claim 29
Dependent Claim
24 words
A semiconductor device according to Claim 26, wherein an electric property varies along a longitudinal direction of the whisker crystal in an optical element.
Claim 30
Dependent Claim
30 words
A semiconductor device accoridng to Claim 29, wherein an electric property is varied from an n-type to a p-type or from a p-type to an n-type in an optical element.
Claim 31
Dependent Claim
40 words
A semiconductor device according to Claim 29, wherein an electric property is varied from an n-type to an i-type and then to a p-type or from a p-type to an i-type and then to an n-type in an optical element.
Claim 32
Dependent Claim
39 words
A semiconductor device according to Claim 26, wherein a medium around a whisker is different from a material quality of the whisker and electronegativity is smaller than that of the material quality of the whisker in an optical element.
Claim 33
Dependent Claim
22 words
A semiconductor device according to Claim 26, wherein a medium around a whisker is composed of an insulator in an optical element.
Claim 34
Dependent Claim
25 words
A semiconductor device according to Claim 26, wherein a semiconductor substrate on which said whisker is made to grow is composed of GaAs or InP.
Claim 35
Dependent Claim
32 words
A semiconductor device according to Claim 34, wherein a plane orientation of a semiconductor substrate on which a whisker is made to grow is either (110) or (111) in an optical element.
Claim 36
Dependent Claim
29 words
A semiconductor device according to Claim 35, wherein shift of the plane orientation of a substrate is at 5° and less in the plane orientation of the semiconductor substrate.
Claim 37
Dependent Claim
11 words
A semiconductor whisker having a diameter at 0.1 µm and less.
Claim 38
Dependent Claim
33 words
A semiconductor device according to Claim 37, wherein said semiconductor whisker is composed of at least one of III - V group compound semiconductors, II - VI group compound semiconductors and element semiconductors.
Claim 39
Dependent Claim
34 words
A semiconductor device according to Claim 38, wherein said III - V group compound semiconductor is at least one selected from a group composed of GaAs, AℓGaAs, InP, InGaAs, InAℓAs, InGaP, GaSb and InSb.
Claim 40
Dependent Claim
32 words
A semiconductor device according to Claim 38, wherein said II - VI group compound semiconductor is at least one selected from a group composed of HgTe, ZnSe, ZnS, ZnTe, CdTe and PbHgTe.
Claim 41
Dependent Claim
26 words
A semiconductor device according to Claim 38, wherein said element semiconductor is composed of at least one selected from a group composed of Ce and Si.
Claim 42
Dependent Claim
37 words
A manufacturing method of a semiconductor device, comprising at least: a process of forming a mask having an opening portion on a substrate; and a process of having a semiconductor whisker (1) grow in said opening region.
Claim 43
Dependent Claim
30 words
A manufacturing method of a semiconductor device according to Claim 42, wherein said semiconductor whisker (1) is formed by vapor phase chemical deposition utilizing thermal decomposition of an organometallic compound.
Claim 44
Dependent Claim
34 words
A manufacturing method of a semiconductor device according to Claim 42, wherein said semiconductor whisker (1) is formed by utilizing surface decomposition reaction of an organometallic compound on a substrate surface in a vacuum.
Claim 45
Dependent Claim
56 words
A manufacturing method of a semiconductor device according to Claim 42, wherein an organometallic compound or a hydride of at least one element selected from a group composed of Ga, As, Aℓ, In, P, Sb, Hg, Te, Pb, Ge and Si is used as a raw material in the formation of said semiconductor quantum wire crystal.
Claim 46
Dependent Claim
53 words
A growth method of a semiconductor whisker, comprising: a process of forming a damage layer on a substrate by implanting ions into a predetermined region on the substrate; and a process of exposing said substrate to a raw material gas so as to have a semiconductor whisker (1) grow from said damage layer.
Claim 47
Dependent Claim
26 words
A growth method of a semiconductor whisker (1) according to Claim 46, wherein the temperature of said substrate is within a range of 350 to 480°C.
Claim 48
Dependent Claim
47 words
A growth method of a semiconductor whisker, comprising: a process of adhering ions in a predetermined region of a substrate; and a process of exposing said substrate to a raw material gas so as to have a semiconductor whisker (1) grow from said portion adhered with ions.
Claim 49
Dependent Claim
22 words
A growth method of a semiconductor whisker according to Claim 48, wherein said ions are ions of a low melting point metal.
Claim 50
Dependent Claim
25 words
A growth method of a semiconductor whisker according to Claim 49, wherein the temperature of said substrate is within a range of 350 to 480°C.
Claim 51
Dependent Claim
50 words
A growth method of a semiconductor whisker, comprising: a process of cutting a substrate and making only a non-cut surface to be an arsenic surface; and a process of exposing said substrate to a raw material gas so as to have semiconductor whiskers (384) grow from said non-cut surface (383).
Claim 52
Dependent Claim
25 words
A growth method of a semiconductor whisker according to Claim 51, wherein the temperature of said substrate is within a range of 350 to 480°C.
References Cited (Backward Citations)
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