US5328873A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming deposited film by use of alkyl aluminum hydride
Assignee: Canon Inc
•
Filing: 1992-06-23
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Granted: 1994-07-12
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Expires: 2012-06-23
Abstract
Abstract A process for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al.
Inventors
- 👤 Nobuo Mikoshiba
- 👤 Kazuo Tsubouchi
- 👤 Kazuya Masu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 01:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C23C16/20; Y; Y10; Y10S; Y10S438/00; Y10S438/937
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
57 words
A process for deposition comprising: providing a silicon substrate having a crystal orientation of (100) plane in a space for film formation; introducing a gas of an alkyl aluminum hydride and hydrogen gas into the space for film formation; and forming monocrystalline aluminum having a crystal orientation of (111) plane on the substrate surface of (100) plane.
Claim 2
Dependent Claim
57 words
A process for deposition comprising: providing a silicon substrate having a crystal orientation of (100) plane in a space for film formation; introducing a gas of an alkyl aluminum hydride and hydrogen gas into the space for film formation; and forming monocrystalline aluminum having a crystal orientation of (111) plane on the substrate surface of (100) plane.
Claim 3
Dependent Claim
25 words
The process according to claim 1, wherein the alkyl aluminum hydride is selected from the group consisting of monomethyl aluminum hydride and dimethyl aluminum hydride.
Claim 4
Dependent Claim
28 words
The process according to claim 1, wherein a face of the crystal orientation of (100) plane is a portion exposed through an insulating layer on the silicon substrate.
Claim 5
Dependent Claim
21 words
The process according to claim 1 including the step of employing the monocrystalline aluminum as an electrode for a semiconductor device.
Claim 6
Dependent Claim
57 words
A process for deposition comprising: providing a silicon substrate having a crystal orientation of (111) plane in a space for film formation; introducing a gas of an alkyl aluminum hydride and hydrogen gas into the space for film formation; and forming monocrystalline aluminum having a crystal orientation of (100) plane on the substrate surface of (111) plane.
Claim 7
Dependent Claim
57 words
A process for deposition comprising: providing a silicon substrate having a crystal orientation of (111) plane in a space for film formation; introducing a gas of an alkyl aluminum hydride and hydrogen gas into the space for film formation; and forming monocrystalline aluminum having a crystal orientation of (100) plane on the substrate surface of (111) plane.
Claim 8
Dependent Claim
25 words
The process according to claim 5, wherein the alkyl aluminum hydride is selected from the group consisting of monomethyl aluminum hydride and dimethyl aluminum hydride.
Claim 9
Dependent Claim
28 words
The process according to claim 5, wherein a face of the crystal orientation of (111) plane is a portion exposed through an insulating layer on the silicon substrate.
Claim 10
Dependent Claim
21 words
The process according to claim 5 including the step of employing the monocrystalline aluminum as an electrode for a semiconductor device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-11 | 1998-01-10 | 1998-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-11 | 2002-01-10 | 2002-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-11 | 2006-01-10 | 2006-07-12 | $7700.00 | Window Closed / Lapsed |