US5328549A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing sheets of crystalline material and devices made therefrom
Assignee: Massachusetts Institute of Technology
•
Filing: 1992-03-03
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Granted: 1994-07-12
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Expires: 2012-03-03
Abstract
Abstract A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
Inventors
- 👤 Carl O. Bozler
- 👤 John C. C. Fan
- 👤 Robert W. McClelland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:03
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; C; C30; C30B; C30B25/00; C30B25/02; C30B25/04; C30B29/00; C30B29/60; C30B33/00; H10F19/00; H10F19/40; H10F71/00; H10F71/121; H10F71/127; H10F71/128; H10F71/134; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/2926; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; H10P14/3414; H10P14/3418; H10P14/3421; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H01; H01S; H01S5/00; H01S5/02; H01S5/0206; H01S5/0207; H01S5/0217; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S117/00; Y10S117/915; Y10S438/00; Y10S438/98
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
185 words
A method of producing a sheet of crystalline material by growth on a substrate through apertures in a growth mask on the substrate comprising the combination of steps of: selecting a thickness for the sheet of single crystal material to be grown; forming the crystal growth mask on a crystallization substrate to produce parallel slits in the mask which establish unmasked areas of the substrate, the orientation of the parallel slits with respect to the crystal orientation of the crystallization substrate being correlated with the thickness and chosen to provide a selected ratio of lateral-to-vertical growth rates during deposition of crystalline material; depositing crystalline material on the substrate areas exposed at the slits under conditions which enable lateral growth of crystalline material over the mask; continuing lateral overgrowth of the single crystal material over the mask until a sheet of the crystalline material has been formed; fabricating an electronic device in the single crystal sheet; bonding the single crystal sheet with the electronic device to a second substrate with an adhesive; and removing the single crystal sheet with the electronic device from the crystallization substrate.
Claim 2
Independent Claim
185 words
A method of producing a sheet of crystalline material by growth on a substrate through apertures in a growth mask on the substrate comprising the combination of steps of: selecting a thickness for the sheet of single crystal material to be grown; forming the crystal growth mask on a crystallization substrate to produce parallel slits in the mask which establish unmasked areas of the substrate, the orientation of the parallel slits with respect to the crystal orientation of the crystallization substrate being correlated with the thickness and chosen to provide a selected ratio of lateral-to-vertical growth rates during deposition of crystalline material; depositing crystalline material on the substrate areas exposed at the slits under conditions which enable lateral growth of crystalline material over the mask; continuing lateral overgrowth of the single crystal material over the mask until a sheet of the crystalline material has been formed; fabricating an electronic device in the single crystal sheet; bonding the single crystal sheet with the electronic device to a second substrate with an adhesive; and removing the single crystal sheet with the electronic device from the crystallization substrate.
Claim 3
Dependent Claim
27 words
A method according to claim 1 wherein the parallel slits in the crystal growth mask are designed to produce sheets of crystalline material having a smooth surface.
Claim 4
Dependent Claim
28 words
A method according to claim 2 wherein the substrate is oriented to provide a natural cleavage plane between its surface and the sheet of crystalline material formed thereon.
Claim 5
Dependent Claim
26 words
A method according to claim 1 comprising forming a crystal growth mask having significantly more adhesion to the crystallization substrate than to the crystalline sheet produced.
Claim 6
Dependent Claim
13 words
A method according to claim 1 wherein the crystal growth mask comprises carbon.
Claim 7
Dependent Claim
32 words
A method according to claim 5 wherein the growth mask comprises a carbon film formed by applying a layer of carbon-containing material to the crystallization substrate and thereafter carbonizing the carbon-containing material.
Claim 8
Dependent Claim
14 words
A method according to claim 1 wherein the crystal growth mask comprises silicon nitride.
Claim 9
Dependent Claim
15 words
A method according to claim 1 wherein the crystal growth mask comprises a powdery film.
Claim 10
Dependent Claim
12 words
A method of claim 1 wherein the crystalline material comprises gallium arsenide.
Claim 11
Dependent Claim
18 words
A method according to claim 9 wherein the crystal growth mask comprises a carbon film or silicon nitride.
Claim 12
Dependent Claim
21 words
A method according to claim 2 wherein the parallel slits of the growth mask are oriented 60° from the (110) direction.
Claim 13
Dependent Claim
12 words
A method according to claim 1 wherein the crystalline material comprises silicon.
Claim 14
Dependent Claim
18 words
A method according to claim 12 wherein the crystal growth mask comprises a carbon film or silicon nitride.
Claim 15
Dependent Claim
20 words
A method according to claim 13 wherein the silicon crystallization substrate has a masked surface oriented in the (111) plane.
Claim 16
Dependent Claim
31 words
A method according to claim 1 wherein the crystal growth mask is formed after scalloping the crystallization substrate and the mask employed covers the scalloped surface except for the peaks thereof.
Claim 17
Dependent Claim
50 words
A method according to claim 1 wherein the crystal growth mask is formed by adding finely divided fused silica to a photo-resist, applying the silica-resist mixture to the crystallization substrate, and thereafter baking the silica-resist mixture to burn away the resist to leave a mask comprising the fused silica powder.
Claim 18
Dependent Claim
32 words
A method according to claim 1 wherein the crystalline material is deposited in the presence of selected impurity dopants to form layers of different conductivity type in the sheet of crystalline material.
Claim 19
Dependent Claim
41 words
A method according to claim 1 wherein plural sheets of crystalline material are formed and are bonded together by an electrically insulating or electrically conducting layer to form a device in which the sheets are electrically decoupled or electrically connected, respectively.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-11 | 1998-01-10 | 1998-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-11 | 2002-01-10 | 2002-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-11 | 2006-01-10 | 2006-07-12 | $7700.00 | Window Closed / Lapsed |