Patent US5326426A successfully refreshed from Google Patents.
US5326426A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Undercut membrane mask for high energy photon patterning
Assignee: International Business Machines Corp
•
Filing: 1991-11-14
•
Granted: 1994-07-05
•
Expires: 2011-11-14
Abstract
Abstract A mask for use with high energy radiation sources in precision projection processing by excimer lasers, for example, is described. The mask comprises a suitable substrate, such as silicon, upon which a multilayer dielectric stack is formed which acts as a reflective coating for the impinging excimer laser radiation, minimizing energy absorption by the mask substrate. The mask transparent areas are defined by the through-holes in the mask. The through-holes are formed with a conically undercut edge profile to define a thin object plane for the mask and minimize scattering of the radiation from the through-hole sidewalls. A method for fabricating the mask is also described.
Inventors
- 👤 Andrew C. Tam
- 👤 Gerhard E. Wolbold
- 👤 Werner Zapka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 18:50
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/20; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24273; Y10T428/24322
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
93 words
A mask for use with high energy radiation sources comprising: a substrate; at least one dielectric layer formed on a first surface of said substrate to produce a layered structure having a thickness of a first dimension; and at least one aperture in said layered structure, said aperture extending through said substrate, said aperture having a generally conically undercut edge profile with substantially vertical sidewalls of a second dimension adjacent to said first surface, said second dimension being substantially less than said first dimension for providing a thin object plane for said mask.
Claim 2
Dependent Claim
93 words
A mask for use with high energy radiation sources comprising: a substrate; at least one dielectric layer formed on a first surface of said substrate to produce a layered structure having a thickness of a first dimension; and at least one aperture in said layered structure, said aperture extending through said substrate, said aperture having a generally conically undercut edge profile with substantially vertical sidewalls of a second dimension adjacent to said first surface, said second dimension being substantially less than said first dimension for providing a thin object plane for said mask.
Claim 3
Dependent Claim
27 words
A mask as in claim 1 wherein said vertical sidewalls extend through said dielectric layer and said first surface to a first predetermined depth in said substrate.
Claim 4
Dependent Claim
42 words
A mask as in claim 2 wherein said substrate includes a doped layer at said first surface, said doped layer having a higher concentration of dopant impurities to said first predetermined depth in said substrate than the substrate beneath said doped layer.
Claim 5
Dependent Claim
21 words
A mask as in claim 3 wherein said second dimension is in the range of approximately between 3 and 4 micrometers.
Claim 6
Dependent Claim
80 words
A mask as in claim 1 having at least one tub-shaped recess formed in a second side of said substrate opposite said first surface for forming a membrane of said substrate material in the area of said recess, a plurality of said apertures forming a desired pattern extending through said membrane into said recess, each said aperture having said generally conically undercut edge profile, said membrane having a predetermined thickness, said second dimension being substantially less than said predetermined thickness.
Claim 7
Dependent Claim
41 words
A mask as in claim 5 wherein said substrate includes a doped layer at said first surface, said doped layer having a higher concentration of dopant impurities than the substrate beneath said doped layer, said dielectric layer overlying said doped layer.
Claim 8
Dependent Claim
65 words
A mask as in claim 6 wherein each said aperture conically undercut edge profile comprises said vertical side walls of said second dimension extending through said dielectric layer and said doped layer, said doped layer being undercut a predetermined amount forming a thin lip for said aperture at said first surface and generally outwardly sloping sidewalls extending from said undercut doped layer to said recess.
Claim 9
Dependent Claim
39 words
A mask as in claim 7 wherein said predetermined thickness of said membrane is in the range of approximately between 35 and 40 micrometers and said second dimension is in the range of approximately between 3 and 4 micrometers.
Claim 10
Dependent Claim
20 words
A mask as in claim 7 wherein said substrate material comprises a crystalline silicon wafer having a (100) crystallographic orientation.
Claim 11
Dependent Claim
22 words
A mask as in claim 9 wherein the plane of said sloping sidewalls parallels the (111) crystallographic plane of said silicon substrate.
Claim 12
Dependent Claim
12 words
A mask as in claim 9 wherein said dopant impurity comprises boron.
Claim 13
Dependent Claim
14 words
A mask as in claim 1 wherein said substrate comprises a crystalline semiconductor wafer.
Claim 14
Dependent Claim
55 words
A mask as in claim 1 wherein said dielectric layer comprises a pair of dielectric materials, said layer comprising a coating of a first material and a coating of a second material overlying said first material, the index of refraction of said second material being higher than the index of refraction of said first material.
Claim 15
Dependent Claim
19 words
A mask as in claim 13 wherein said dielectric layer comprises a plurality of pairs of said dielectric materials.
Claim 16
Dependent Claim
42 words
A mask as in claim 13 wherein said first material is selected from the group consisting of silicon dioxide and magnesium fluoride, and said second material is selected from the group consisting of hafnium oxide, scandium oxide, aluminum oxide and thallium fluoride.
Claim 17
Independent Claim
217 words
A method for fabricating a mask for use with high energy radiation sources comprising the steps of: forming at a first surface of a planar substrate a doped layer, said doped layer having a higher concentration of dopant impurities to a first predetermined depth than the substrate beneath said doped layer; forming a first masking layer on said first surface and a second masking layer on a second surface opposite said first surface of said substrate, said first masking layer defining a desired mask pattern; forming at least one aperture through said second masking layer exposing selected portions of said second surface and etching said selected portions to form at least one recess in said substrate to a second predetermined depth, the substrate material remaining between said recess and said first surface forming a membrane; etching said membrane through said first masking layer to form a plurality of apertures in said desired mask pattern, said apertures extending through said membrane into said recess; anisotropic etching said membrane undercutting said heavily doped layer and forming outwardly sloping aperture sidewalls extending from said undercut layer to said recess defining a generally conical undercut edge profile for said apertures through said membrane; removing said first and second masking layers; and applying at least one dielectric layer to said first surface.
Claim 18
Independent Claim
217 words
A method for fabricating a mask for use with high energy radiation sources comprising the steps of: forming at a first surface of a planar substrate a doped layer, said doped layer having a higher concentration of dopant impurities to a first predetermined depth than the substrate beneath said doped layer; forming a first masking layer on said first surface and a second masking layer on a second surface opposite said first surface of said substrate, said first masking layer defining a desired mask pattern; forming at least one aperture through said second masking layer exposing selected portions of said second surface and etching said selected portions to form at least one recess in said substrate to a second predetermined depth, the substrate material remaining between said recess and said first surface forming a membrane; etching said membrane through said first masking layer to form a plurality of apertures in said desired mask pattern, said apertures extending through said membrane into said recess; anisotropic etching said membrane undercutting said heavily doped layer and forming outwardly sloping aperture sidewalls extending from said undercut layer to said recess defining a generally conical undercut edge profile for said apertures through said membrane; removing said first and second masking layers; and applying at least one dielectric layer to said first surface.
Claim 19
Dependent Claim
32 words
The method of claim 16 wherein the step of forming a doped layer at said first surface includes the step of forming a doped layer at said second surface of said substrate.
Claim 20
Dependent Claim
11 words
The method of claim 16 wherein said substrate comprises crystalline silicon.
Claim 21
Dependent Claim
11 words
The method of claim 18 wherein said dopant material comprises boron.
Claim 22
Dependent Claim
28 words
The method of claim 17 including the additional step of forming a doped layer on the surfaces defining said recess at the completion of said anisotropic etching step.
Claim 23
Dependent Claim
16 words
The method of claim 16 wherein each said masking layer comprises a layer of silicon dioxide.
Claim 24
Dependent Claim
27 words
The method of claim 21 wherein said step of forming each masking layer of silicon dioxide comprises depositing a layer of silicon dioxide by chemical vapor deposition.
Claim 25
Dependent Claim
34 words
The method of claim 18 wherein the step of etching said membrane through said first masking layer comprises anisotropic reactive ion etching to form said plurality of apertures, said apertures having vertical side walls.
Claim 26
Dependent Claim
22 words
The method of claim 18 wherein the step of anisotropic etching of said membrane comprises anisotropic wet etching in an alkaline solution.
Claim 27
Dependent Claim
16 words
The method of claim 24 wherein said alkaline solution comprises a 10-molar solution of potassium hydroxide.
Claim 28
Dependent Claim
24 words
The method of claim 24 wherein the plane of said sloping aperture sidewalls is parallel to the (111) crystallographic plane of said silicon substrate.
Claim 29
Dependent Claim
55 words
A method as in claim 16 wherein said dielectric layer comprises a pair of dielectric materials, said layer comprising a coating of a first material and a coating of a second material overlying said first material, the index of refraction of said second material being higher than the index of refraction of said first material.
Claim 30
Dependent Claim
21 words
A method as in claim 27 wherein said dielectric layer comprises a plurality of layers of said pairs of dielectric materials.
Claim 31
Dependent Claim
42 words
A method as in claim 27 wherein said first material is selected from the group consisting of silicon dioxide and magnesium fluoride, and said second material is selected from the group consisting of hafnium oxide, scandium oxide, aluminum oxide and thallium fluoride.
Claim 32
Independent Claim
150 words
A method of laser processing a target substrate comprising the steps of: generating a high energy radiation beam; locating a transmission mask defining a desired processing pattern in front of said target substrate, said high energy radiation beam incident on said transmission mask, said mask comprising: a substrate; at least one dielectric layer formed on a first surface of said substrate to produce a layered structure having a thickness of a first dimension, said high energy radiation beam incident on said dielectric layer; and at least one aperture in said layered structure, said aperture extending through said substrate and said dielectric layer, said aperture having a generally conically undercut edge profile with substantially vertical sidewalls of a second dimension adjacent to said first surface said second dimension being substantially less than said first dimension; and imaging the radiation transmitted through said mask exiting said undercut aperture onto said target substrate.
Claim 33
Independent Claim
150 words
A method of laser processing a target substrate comprising the steps of: generating a high energy radiation beam; locating a transmission mask defining a desired processing pattern in front of said target substrate, said high energy radiation beam incident on said transmission mask, said mask comprising: a substrate; at least one dielectric layer formed on a first surface of said substrate to produce a layered structure having a thickness of a first dimension, said high energy radiation beam incident on said dielectric layer; and at least one aperture in said layered structure, said aperture extending through said substrate and said dielectric layer, said aperture having a generally conically undercut edge profile with substantially vertical sidewalls of a second dimension adjacent to said first surface said second dimension being substantially less than said first dimension; and imaging the radiation transmitted through said mask exiting said undercut aperture onto said target substrate.
Claim 34
Dependent Claim
61 words
A mask for use in laser processing of target materials comprising: a substrate; a reflective coating including at least one layer of dielectric material having a high reflectivity formed on a top surface of said substrate to produce a layered structure having a predetermined thickness; and at least one aperture in said layered structure, said aperture extending through said layered structure.
Claim 35
Dependent Claim
61 words
A mask for use in laser processing of target materials comprising: a substrate; a reflective coating including at least one layer of dielectric material having a high reflectivity formed on a top surface of said substrate to produce a layered structure having a predetermined thickness; and at least one aperture in said layered structure, said aperture extending through said layered structure.
Claim 36
Dependent Claim
101 words
A mask for use in laser processing of target materials comprising: a substrate; at least one dielectric layer formed on a top surface of said substrate to produce a layered structure having a predetermined thickness; and at least one tub-shaped recess formed in a bottom surface of said substrate opposite said top surface for forming a membrane of said layered structure in the area of said recess, said membrane being of said predetermined thickness, a plurality of apertures formed in said membrane defining a desired pattern therein and extending through said membrane into said recess, each aperture having generally vertical sidewalls.
Claim 37
Dependent Claim
101 words
A mask for use in laser processing of target materials comprising: a substrate; at least one dielectric layer formed on a top surface of said substrate to produce a layered structure having a predetermined thickness; and at least one tub-shaped recess formed in a bottom surface of said substrate opposite said top surface for forming a membrane of said layered structure in the area of said recess, said membrane being of said predetermined thickness, a plurality of apertures formed in said membrane defining a desired pattern therein and extending through said membrane into said recess, each aperture having generally vertical sidewalls.
Claim 38
Dependent Claim
41 words
A mask as in claim 32 wherein said substrate includes a doped layer at said top surface, said doped layer having a higher concentration of dopant impurities than the substrate beneath said doped layer, said dielectric layer overlying said doped layer.
Claim 39
Dependent Claim
13 words
A mask as in claim 33 wherein said membrane includes said doped layer.
Claim 40
Dependent Claim
22 words
A mask as in claim 34 wherein said membrane has a thickness in the range of approximately between 3 and 4 micrometers.
Claim 41
Dependent Claim
60 words
A mask as in claim 32 wherein said dielectric layer comprises a pair of dielectric materials, said layer comprising a coating of a first material formed on said top surface and a coating of a second material overlying said first material, the index of refraction of said second material being higher than the index of refraction of said first material.
Claim 42
Dependent Claim
19 words
A mask as in claim 36 wherein said dielectric layer comprises a plurality of pairs of said dielectric materials.
Claim 43
Dependent Claim
74 words
A mask as in claim 31 wherein said layer of dielectric material comprises a pair of layers of dielectric material, said pair of layers comprising a layer of a first dielectric material and a layer of a second dielectric material, said layer of second dielectric material overlying said layer of first dielectric material, the index of refraction of said second dielectric material being higher than the index of refraction of said first dielectric material.
Claim 44
Dependent Claim
24 words
A mask as in claim 38 wherein said reflective coating comprises a plurality of pairs of said layers of first and second dielectric materials.
References Cited (Backward Citations)
US4256532A
Cited
US4417946A
Cited
US4419182A
Cited
US4478677A
Cited
US4490211A
Cited
US4490210A
Cited
US4923772A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-04 | 1998-01-03 | 1998-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-04 | 2002-01-03 | 2002-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-04 | 2006-01-03 | 2006-07-05 | $7700.00 | Window Closed / Lapsed |