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US5316977A
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Method of manufacturing a semiconductor device comprising metal silicide
Assignee: Toshiba Corp
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Filing: 1992-07-16
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Granted: 1994-05-31
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Expires: 2012-07-16
Abstract
Abstract According to this invention, a method of manufacturing a semiconductor device includes the steps of forming an impurity diffusion layer of a second conductivity type on a semiconductor substrate of a first conductivity type, forming a transitition layer containing a constituent element of the semiconductor substrate on the impurity diffusion layer, and doping an impurity of the second conductivity type in the metal compound layer by annealing in a reducing atmosphere. A semiconductor device includes a semiconductor substrate of a first conductivity type, an impurity diffusion layer of a second conductivity type formed in the semiconductor substrate of the first conductivity type, and a conductive metal compound layer formed on the impurity diffusion layer, wherein the conductive metal compound layer consists of at least a transition metal, a semiconductor element, and an impurity element of the second conductivity type which is an impurity element of the second conductivity type, and the impurity element of the second conductivity in the conductive metal compound layer is uniformly distributed.
Inventors
- 👤 Iwao Kunishima
- 👤 Kyoichi Suguro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:43
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/60; H10D64/62; Y; Y10; Y10S; Y10S148/00; Y10S148/019; Y10S148/147
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
115 words
A method of manufacturing a semiconductor device comprising the steps of: forming an impurity diffusion layer of a second conductivity type on a semiconductor substrate of a first conductivity type, forming a Ti compound layer containing a constituent element of said semiconductor substrate on said impurity diffusion layer, and doping an impurity of the second conductivity type in said Ti compound layer by annealing in a reducing atmosphere containing a B 2 H 6 gas and an H 2 gas; further comprising a second annealing step in an oxidizing atmosphere containing a B 2 H 6 gas performed after annealing in an atmosphere containing a B 2 H 6 gas and an H 2 gas.
Claim 2
Independent Claim
115 words
A method of manufacturing a semiconductor device comprising the steps of: forming an impurity diffusion layer of a second conductivity type on a semiconductor substrate of a first conductivity type, forming a Ti compound layer containing a constituent element of said semiconductor substrate on said impurity diffusion layer, and doping an impurity of the second conductivity type in said Ti compound layer by annealing in a reducing atmosphere containing a B 2 H 6 gas and an H 2 gas; further comprising a second annealing step in an oxidizing atmosphere containing a B 2 H 6 gas performed after annealing in an atmosphere containing a B 2 H 6 gas and an H 2 gas.
Claim 3
Dependent Claim
28 words
A method according to claim 1, wherein the step of doping the impurity of the second conductivity type in said Ti compound layer is performed by vapor-phase diffusion.
Claim 4
Dependent Claim
28 words
A method according to claim 1, wherein the step of doping the impurity of the second conductivity type in said Ti compound layer is performed by solid-phase diffusion.
Claim 5
Dependent Claim
44 words
A method according to claim 3, wherein the solid-phase diffusion is performed by forming a thin film containing the impurity of the second conductivity type on said Ti compound layer and diffusion the impurity of the second conductivity type in said Ti compound layer.
Claim 6
Dependent Claim
41 words
A method according to claim 3, wherein the solid-phase diffusion is performed by diffusing the impurity of the second conductivity type in said Ti compound layer while the impurity of the second conductivity type is deposited on said Ti compound layer.
Claim 7
Dependent Claim
34 words
A method according to claim 1, wherein doping of the impurity element of the second conductivity type is performed to uniformly dope the impurity of the second conductivity type in said Ti compound layer.
Claim 8
Dependent Claim
31 words
The method of claim 1, further comprising a third annealing step in a nitrogen atmosphere, performed after said second annealing step in an oxidizing atmosphere containing B 2 H 6 .
Claim 9
Independent Claim
112 words
A method of manufacturing a semiconductor device, comprising the steps of forming an impurity diffusion layer of a second conductivity type on a semiconductor substrate of a first conductivity type, forming a thin film consisting of a transition metal on said impurity diffusion layer, and annealing said semiconductor substrate having said thin film thereon in an atmosphere containing an impurity element of the second conductivity type to cause the transition metal to react with a semiconductor constituent element of said semiconductor substrate and to dope the impurity element of the second conductivity type in a transition metal compound layer formed by the reaction between the transition metal and the semiconductor constituent element.
Claim 10
Independent Claim
112 words
A method of manufacturing a semiconductor device, comprising the steps of forming an impurity diffusion layer of a second conductivity type on a semiconductor substrate of a first conductivity type, forming a thin film consisting of a transition metal on said impurity diffusion layer, and annealing said semiconductor substrate having said thin film thereon in an atmosphere containing an impurity element of the second conductivity type to cause the transition metal to react with a semiconductor constituent element of said semiconductor substrate and to dope the impurity element of the second conductivity type in a transition metal compound layer formed by the reaction between the transition metal and the semiconductor constituent element.
Claim 11
Dependent Claim
51 words
A method according to claim 8, wherein a gas mixture consisting of a gas containing the impurity of the second conductivity type and a gas for suppressing decomposition of the gas containing the impurity of the second conductivity is included said atmosphere containing the impurity element of the second conductivity type.
Claim 12
Dependent Claim
21 words
A method according to claim 9, wherein the gas mixture consists of B 2 H 6 gas and H 2 gas.
Claim 13
Dependent Claim
35 words
A method according to claim 8, wherein doping of the impurity element of the second conductivity type is performed to uniformly dope the impurity of the second conductivity type in said transition metal compound layer.
Claim 14
Dependent Claim
28 words
A method according to claim 8, wherein the transition metal is at least one member selected from the group consisting of Ti, V, W. Mo, Ta, and Co.
Claim 15
Dependent Claim
22 words
A method according to claim 8, wherein B is used as the impurity element, and Ti is used as the transition metal.
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