US4465529A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconductor device
Assignee: Mitsubishi Electric Corp
•
Filing: 1982-06-04
•
Granted: 1984-08-14
•
Expires: 2002-06-04
Abstract
Abstract A method for producing an impurity containing semiconductor substrate includes depositing an impurity on selected portions of the substrate by placing a charge on the substrate and converting a gaseous impurity containing atmosphere into a plasma. The impurity may then be diffused into the substrate to a controlled and shallow depth by employing a laser or the like to selectively irradiate the impurity.
Inventors
- 👤 Hideaki Arima
- 👤 Tadashi Nishimura
- 👤 Masahiro Yoneda
- 👤 Takaaki Fukumoto
- 👤 Yoshihiro Hirata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:25
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/17; H10P32/171; C; C30; C30B; C30B31/00; C30B31/06; C30B31/18; C30B31/185; H10P32/12; H10P32/14; H10P32/1408; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
89 words
A method for producing a conductive layer of a semiconductor device, comprising; exposing at least a portion of the surface of a semiconductor substrate, introducing a gas atmosphere including an impurity about said substrate and converting said atmosphere to a plasma state, producing a change in the potential of the semiconductor substrate by irradiating said semiconductor in a beam or shower of electrons, and forming an impurity layer on said exposed surface of the semiconductor substrate, by electrostatically attracting said impurity in the plasma state to said exposed surface.
Claim 2
Independent Claim
89 words
A method for producing a conductive layer of a semiconductor device, comprising; exposing at least a portion of the surface of a semiconductor substrate, introducing a gas atmosphere including an impurity about said substrate and converting said atmosphere to a plasma state, producing a change in the potential of the semiconductor substrate by irradiating said semiconductor in a beam or shower of electrons, and forming an impurity layer on said exposed surface of the semiconductor substrate, by electrostatically attracting said impurity in the plasma state to said exposed surface.
Claim 3
Dependent Claim
26 words
A method for producing a conductive layer according to claim 1, including diffusing said impurity layer into the semiconductor substrate by means of a heat treatment.
Claim 4
Dependent Claim
29 words
A method for producing a conductive layer according to claim 2, wherein said heat treatment is performed by irradiating selected portions of said impurity layer with an energy beam.
Claim 5
Dependent Claim
34 words
A method for producing a conductive layer according to claim 3, wherein said irradiation proceeds simultaneously with the electrostatic attraction of said impurity to said exposed portions of the surface of the semiconductor substrate.
Claim 6
Independent Claim
34 words
A method for producing a conductive layer according to claims 1, 2, 3 or 4, wherein said impurity includes at least one element selected from the group consisting of phosphorus, arsenic, boron and antimony.
Claim 7
Dependent Claim
32 words
A method for producing a conductive layer according to claim 3, wherein said irradiation proceeds after the attraction of said impurity to said exposed portions of the surface of the semiconductor substrate.
Claim 8
Dependent Claim
29 words
A method for producing a conductive layer according to claim 1, wherein said gas atmosphere containing said impurity in the plasma state includes a carrier gas for facilitating discharge.
Claim 9
Dependent Claim
28 words
A method for producing a conductive layer according to claim 1, wherein said change in potential is produced on the semiconductor substrate by means of self potential formation.
Claim 10
Independent Claim
126 words
A method for producing a conductive layer of a semiconductor device, comprising; exposing at least a portion of the surface of a semiconductor substrate, introducing a gas atmosphere including an impurity about said substrate and converting said atmosphere to a plasma state, producing a change in the potential of the semiconductor substrate by subjecting the same to irradiation in an electron beam or shower, and forming an impurity layer on the exposed surface of the semiconductor substrate by electrostatically attracting said impurity in the plasma state to said exposed surface due to said change in potential thereof, and subsequently diffusing said impurity layer into the semiconductor substrate by means of a heat treatment performed by irradiating selected portions of said impurity layer with an energy beam.
Claim 11
Independent Claim
126 words
A method for producing a conductive layer of a semiconductor device, comprising; exposing at least a portion of the surface of a semiconductor substrate, introducing a gas atmosphere including an impurity about said substrate and converting said atmosphere to a plasma state, producing a change in the potential of the semiconductor substrate by subjecting the same to irradiation in an electron beam or shower, and forming an impurity layer on the exposed surface of the semiconductor substrate by electrostatically attracting said impurity in the plasma state to said exposed surface due to said change in potential thereof, and subsequently diffusing said impurity layer into the semiconductor substrate by means of a heat treatment performed by irradiating selected portions of said impurity layer with an energy beam.
References Cited (Backward Citations)
US3576685A
Cited
US3718502A
Cited
JPS568816A
Cited
US4351674A
Cited
US4340617A
Cited
US4364778A
Cited
US4342631A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-14 | 1988-02-13 | 1988-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-14 | 1992-02-13 | 1992-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-14 | 1996-02-13 | 1996-08-14 | $7700.00 | Window Closed / Lapsed |