Patent US5314847A successfully refreshed from Google Patents.
US5314847A
Expired / Lapsed
US
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Semiconductor substrate surface processing method using combustion flame
Assignee: Toshiba Corp
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Filing: 1991-02-20
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Granted: 1994-05-24
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Expires: 2011-02-20
Abstract
Abstract In order to provide the processing required to prevent a semiconductor substrate from becoming contaminated or damaged, without heating it in a kiln, a combustion flame of a gas that is a mixture of hydrogen and oxygen is applied to the surface of the semiconductor substrate, so that only the substrate surface is heated. Oxidizing or reducing processing can be provided by varying the ratio of hydrogen to oxygen. A device that enables this processing method comprises a first conduit (6) for guiding hydrogen; a second conduit (7) for guiding oxygen; a flame generation means (5) for combusting the hydrogen and the oxygen in a mixed state to generate a downward-pointing flame over a range wider than the diameter of a semiconductor substrate (1) that is being processed; a flow regulation means (8) and (9) provided midway in each of the first tube and the second tube, for regulating the fluid passing through each of the first tube and the second tube; and a conveyor means (2), (3), and (14) for conveying the semiconductor substrate that is being processed, provided below the flame generation means.
Inventors
- 👤 Tohru Watanabe
- 👤 Katsuya Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10D; H10D99/00; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P14/6322; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P72/00; H10P72/04; H10P72/0431; H10P72/0434; H10P95/00; H10P95/08; H10P95/90; H10P14/20; H10P14/34; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/38; H10P14/3802
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
40 words
A semiconductor substrate surface processing method characterized in that a combustion flame formed of a gas that is a mixture of hydrogen and oxygen is applied to a semiconductor substrate surface, and that only said substrate surface is heated thereby.
Claim 2
Dependent Claim
40 words
A semiconductor substrate surface processing method characterized in that a combustion flame formed of a gas that is a mixture of hydrogen and oxygen is applied to a semiconductor substrate surface, and that only said substrate surface is heated thereby.
Claim 3
Dependent Claim
26 words
A semiconductor substrate surface processing method in accordance with claim 1, wherein the ratio by volume of said hydrogen with respect to said oxygen is 2:1.
Claim 4
Dependent Claim
45 words
A semiconductor substrate surface processing method in accordance with claim 1, wherein said combustion flame has a reducing effect created by increasing the hydrogen in the ratio by volume of said hydrogen with respect to said oxygen, to increase said ratio to more than 2:1.
Claim 5
Dependent Claim
45 words
A semiconductor substrate surface processing method in accordance with claim 1, wherein said combustion flame has an oxidizing effect created by increasing the oxygen in the ratio by volume of said hydrogen with respect to said oxygen, to reduce said ratio to less than 2:1.
Claim 6
Dependent Claim
27 words
A semiconductor substrate surface processing method in accordance with claim 1, wherein said combustion flame has a linear shape longer than the diameter of said semiconductor substrate.
Claim 7
Dependent Claim
28 words
A semiconductor substrate surface processing method in accordance with claim 1, wherein the density of a low-density film deposited on said substrate surface is increased by said heating.
Claim 8
Dependent Claim
26 words
A semiconductor substrate surface processing method in accordance with claim 1, wherein an interface reaction between two substances in close contact is promoted by said heating.
Claim 9
Dependent Claim
25 words
A semiconductor substrate surface processing method in accordance with claim 1, wherein a semiconductor substrate region implanted with an impurity is activated by said heating.
Claim 10
Dependent Claim
28 words
A semiconductor substrate surface processing method in accordance with claim 1, wherein a semiconductor substrate surface is oxidized by said heating, using a flame with an oxidizing effect.
Claim 11
Dependent Claim
32 words
A semiconductor substrate surface processing method in accordance with claim 1, wherein a resist formed on a semiconductor substrate surface, or a residue of such a resist, is ashed by said heating.
Claim 12
Dependent Claim
51 words
A semiconductor substrate surface processing method in accordance with claim 1, wherein said heating is used locally to form a single-crystal seed in a polycrystalline or amorphous layer formed on a semiconductor substrate surface, and the heating range is then increased to expand the single-crystal region over the entire substrate surface.
Claim 13
Dependent Claim
26 words
A semiconductor substrate surface processing method in accordance with claim 1, wherein a layer formed on semiconductor substrate surface is melted and flattened by said heating.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-23 | 1997-11-22 | 1998-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-23 | 2001-11-22 | 2002-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-23 | 2005-11-22 | 2006-05-24 | $7700.00 | Window Closed / Lapsed |