Abstract A MOS type field effect transistor includes a columnar insulation layer (22) formed in a concave portion of semiconductor layer (23) that is formed on a main surface of a semiconductor substrate (21). One source drain region (15) is formed annularly in the main surface of the substrate (21) and outwardly from an outer circumferential surface of the semiconductor layer (23), and is connected to one end of a channel (24) of the semiconductor layer (23). A second source drain region (16) is formed on an upper end of the semiconductor layer (23), and is connected to the other end of the channel (24). A cylindrical gate electrode (28) is formed to surround the outer circumferential surface of the semiconductor layer (23). Insulation layer (22) within semiconductor layer (23) constitutes a vertical SOI device.
A manufacturing method of a MOS field effect transistor comprising: etching a semiconductor substrate of a fist conductivity type to form a trench on the surface of said semiconductor substrate; forming an insulating layer on said semiconductor substrate for filling said trench; etching said semiconductor substrate to form a cylindrical semiconductor mesa portion of first conductivity type containing said trench and a first semiconductor surface extending laterally outwardly from the circumferential bottom of said mesa portion; forming on said first semiconductor surface a first source-drain area of a second conductivity type extending annularly from said circumferential bottom; forming on the top of said mesa portion a second drain/source area of the second conductivity type; forming a gate insulating film on the vertical circumferential wall of said mesa portion and a gate electrode on said insulating film.
Claim 2
Dependent Claim
136 words
A manufacturing method of a MOS field effect transistor comprising: etching a semiconductor substrate of a fist conductivity type to form a trench on the surface of said semiconductor substrate; forming an insulating layer on said semiconductor substrate for filling said trench; etching said semiconductor substrate to form a cylindrical semiconductor mesa portion of first conductivity type containing said trench and a first semiconductor surface extending laterally outwardly from the circumferential bottom of said mesa portion; forming on said first semiconductor surface a first source-drain area of a second conductivity type extending annularly from said circumferential bottom; forming on the top of said mesa portion a second drain/source area of the second conductivity type; forming a gate insulating film on the vertical circumferential wall of said mesa portion and a gate electrode on said insulating film.