Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
221 words
An electrostatic discharge (ESD) protection circuit comprising a bus diode-connected to at least one signal pad of an integrated circuit with an anode of a diode connected to the signal pad and a cathode of the diode connected to said bus, said bus also coupled to a positive-voltage power supply, a shunt element capable, when active, of delivering current from said bus to a ground plane of said integrated circuit, said shunt element activated by a trigger voltage applied thereto, triggering means responsive to a pad-to-ground voltage between said signal pad and said ground plane for providing said trigger voltage whenever said pad-to-ground voltage exceeds a threshold characteristic of an ESD event, said triggering means including a string of diode-connected field effect transistors (FETs) coupled between said signal pad and said ground plane with a node between two of said diode-connected FETs, a resistive-load inverter with a load resistor and an n-channel trigger FET connected in series between said bus and said ground plane, a gate of said trigger FET connected to said node of said string of diode-connected FETs, an output node of said resistive-load inverter being between said load resistor and said trigger FET, and a CMOS inverter with an input connected to said output node of said resistive-load inverter and with an output connected to said shunt element.
Claim 2
Dependent Claim
221 words
An electrostatic discharge (ESD) protection circuit comprising a bus diode-connected to at least one signal pad of an integrated circuit with an anode of a diode connected to the signal pad and a cathode of the diode connected to said bus, said bus also coupled to a positive-voltage power supply, a shunt element capable, when active, of delivering current from said bus to a ground plane of said integrated circuit, said shunt element activated by a trigger voltage applied thereto, triggering means responsive to a pad-to-ground voltage between said signal pad and said ground plane for providing said trigger voltage whenever said pad-to-ground voltage exceeds a threshold characteristic of an ESD event, said triggering means including a string of diode-connected field effect transistors (FETs) coupled between said signal pad and said ground plane with a node between two of said diode-connected FETs, a resistive-load inverter with a load resistor and an n-channel trigger FET connected in series between said bus and said ground plane, a gate of said trigger FET connected to said node of said string of diode-connected FETs, an output node of said resistive-load inverter being between said load resistor and said trigger FET, and a CMOS inverter with an input connected to said output node of said resistive-load inverter and with an output connected to said shunt element.
Claim 3
Dependent Claim
43 words
The circuit of claim 1 wherein said signal pad is diode-connected to said bus through a base-emitter junction of a pnp transistor with an emitter of said transistor connected to said signal pad and a base of said transistor connected to said bus.
Claim 4
Dependent Claim
15 words
The circuit of claim 2 wherein said bus is connected directly to said power supply.
Claim 5
Dependent Claim
35 words
The circuit of claim 2 wherein said bus is diode-connected to said power supply with an anode of a diode connected to the power supply and a cathode of the diode connected to said bus.
Claim 6
Dependent Claim
43 words
The circuit of claim 4 wherein said bus is diode-connected to said power supply through a base-emitter junction of another pnp transistor with an emitter of said transistor connected to said power supply and a base of said transistor connected to said bus.
Claim 7
Dependent Claim
92 words
The circuit of claim 2 wherein said string of diode-connected FETs is connected to a second bus and to ground, said second bus also being diode-connected to said signal pad through a base-emitter junction of another pnp transistor with an emitter of said transistor connected to said signal pad and a base of said transistor connected to said second bus, said second bus also being diode-connected to a power supply with an anode of a diode connected to said power supply and a cathode of the diode connected to said second bus.
Claim 8
Dependent Claim
46 words
The circuit of claim 6 wherein said second bus is diode-connected to said power supply through a base-emitter junction of a third pnp transistor with an emitter of said transistor connected to said power supply and a base of said transistor connected to said second bus.
Claim 9
Dependent Claim
25 words
The circuit of claim 1 wherein said triggering means further includes a boost capacitor connected between said bus and a second node of said string.
Claim 10
Dependent Claim
39 words
The circuit of claim 1 further comprising a feedback FET with a gate connected to said output of said CMOS inverter, a drain connected to said input of said CMOS inverter, and a source connected to said ground plane.