Patent US5310694A successfully refreshed from Google Patents.
US5310694A
Expired / Lapsed
US
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Method for forming a transistor device with resistive coupling
Assignee: Texas Instruments Inc
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Filing: 1992-11-06
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Granted: 1994-05-10
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Expires: 2012-11-06
Abstract
Abstract A static memory cell comprises a first PMOS transistor including a drain 319, a channel 344, a source 317, and a lightly doped drain 360 and a first NMOS transistor including a source 323, a channel 346, and a drain 321. A first gate 334 insulatively overlies the channel 344 and the lightly doped drain region 360 of the first PMOS transistor as well as the channel 346 of the first NMOS transistor. The memory cell also includes a second PMOS transistor which in turn includes a source 327, a channel 362, a source 325, and a lightly doped drain 364 and a second NMOS transistor which includes a source 323, a channel 368, and a drain 329. A second gate 338 insulatively overlies the channel 362 and the lightly doped drain region 364 of the second PMOS transistor and the channel 368 of the second NMOS transistor. A first gated resistor is coupled between the drain 319 of the first PMOS transistor and the second gate 338 and a second gated resistor is coupled between the drain 327 of the second PMOS transistor and the first gate 334. Other systems and methods are also disclosed.
Inventors
- 👤 Theodore W. Houston
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:51
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; Y; Y10; Y10S; Y10S257/00; Y10S257/903
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
199 words
A method of forming a static memory cell comprising the steps of: forming a first PMOS transistor including a source, a channel, a drain, and a lightly doped drain; forming a first NMOS transistor including a source, a channel, and a drain; forming a first gate insulatively overlying said channel and said lightly doped drain region of said first PMOS transistor and said channel of said first NMOS transistor; forming a second PMOS transistor including a source, a channel, a drain, and a lightly doped drain; forming a second NMOS transistor including a source, a channel, and a drain; forming a second gate insulatively overlying said channel and said lightly doped drain region of said second PMOS transistor and said channel of said second NMOS transistor; forming a first gated resistor coupled between said drain of said first PMOS transistor and said second gate, wherein said first gated resistor comprises said drain of said first PMOS transistor, said lightly doped drain of said first PMOS transistor, and a more heavily p-type doped region which is coupled to said second gate; and forming a second gated resistor coupled between said drain of said second PMOS transistor and said first gate.
Claim 2
Independent Claim
199 words
A method of forming a static memory cell comprising the steps of: forming a first PMOS transistor including a source, a channel, a drain, and a lightly doped drain; forming a first NMOS transistor including a source, a channel, and a drain; forming a first gate insulatively overlying said channel and said lightly doped drain region of said first PMOS transistor and said channel of said first NMOS transistor; forming a second PMOS transistor including a source, a channel, a drain, and a lightly doped drain; forming a second NMOS transistor including a source, a channel, and a drain; forming a second gate insulatively overlying said channel and said lightly doped drain region of said second PMOS transistor and said channel of said second NMOS transistor; forming a first gated resistor coupled between said drain of said first PMOS transistor and said second gate, wherein said first gated resistor comprises said drain of said first PMOS transistor, said lightly doped drain of said first PMOS transistor, and a more heavily p-type doped region which is coupled to said second gate; and forming a second gated resistor coupled between said drain of said second PMOS transistor and said first gate.
Claim 3
Dependent Claim
42 words
The method of claim 1 and further comprising the steps of: forming a first PMOS pass transistor coupled to the drain of said first NMOS transistor; and forming a second PMOS pass transistor coupled to the drain of said second NMOS transistor.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein said first and second NMOS transistors are formed such that they share a common source region.
Claim 5
Dependent Claim
20 words
The method of claim 3 and further comprising the step of coupling said common source region to a ground potential.
Claim 6
Dependent Claim
33 words
The method of claim 1 wherein said second gated resistor comprises said lightly doped drain of said second PMOS transistor and a heavily p-type doped region which is coupled to said first gate.
Claim 7
Dependent Claim
37 words
The method of claim 1 and further comprising the steps of providing a power supply voltage, said power supply voltage coupled to said source of said first PMOS transistor and said source of said second PMOS transistor.
Claim 8
Dependent Claim
25 words
The method of claim 1 wherein said steps of forming a static memory cell comprise the steps of forming an array of substantially like cells.
Claim 9
Dependent Claim
15 words
The method of claim 1 wherein said cell is formed in silicon on insulator technology.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein said step of forming a PMOS transistor comprises forming a stacked transistor.
Claim 11
Dependent Claim
14 words
The method of claim 9 wherein said PMOS transistor is formed in recrystallized polysilicon.
Claim 12
Independent Claim
135 words
A method of forming a semiconductor transistor device comprising the steps of: forming a heavily doped source region and drain regions of a first conductivity type; forming a lightly doped channel region formed adjacent to said source region, said lightly doped channel region of a second conductivity type different than said first conductivity type; forming a lightly doped drain region of said first conductivity type, said lightly doped drain region formed between said drain region and said channel region and including an extended portion for making a resistive contact to another region; and forming a gated resistor between said drain region and said another region, wherein said gated resistor comprises said drain region, said lightly doped drain region, and a heavily doped region of said first conductivity type which is coupled to said another region.
Claim 13
Independent Claim
135 words
A method of forming a semiconductor transistor device comprising the steps of: forming a heavily doped source region and drain regions of a first conductivity type; forming a lightly doped channel region formed adjacent to said source region, said lightly doped channel region of a second conductivity type different than said first conductivity type; forming a lightly doped drain region of said first conductivity type, said lightly doped drain region formed between said drain region and said channel region and including an extended portion for making a resistive contact to another region; and forming a gated resistor between said drain region and said another region, wherein said gated resistor comprises said drain region, said lightly doped drain region, and a heavily doped region of said first conductivity type which is coupled to said another region.
Claim 14
Dependent Claim
15 words
The method of claim 11 wherein said first conductivity type comprises a p-type doped material.
Claim 15
Dependent Claim
34 words
The method of claim 12 and further comprising the steps of: coupling said drain region of said transistor to an NMOS transistor drain region; and coupling said lightly doped region to an inverter input.
Claim 16
Dependent Claim
12 words
The method of claim 13 wherein said inverter is a CMOS inverter.
Claim 17
Dependent Claim
14 words
The method of claim 11 wherein said transistor is formed on an insulating layer.
Claim 18
Dependent Claim
13 words
The method of claim 11 wherein said transistor is formed in recrystallized polysilicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-09 | 1997-11-08 | 1998-05-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-09 | 2001-11-08 | 2002-05-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-09 | 2005-11-08 | 2006-05-10 | $7700.00 | Window Closed / Lapsed |