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US5300824A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit with improved on-chip power supply control
Assignee: Texas Instruments Inc
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Filing: 1993-02-26
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Granted: 1994-04-05
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Expires: 2013-02-26
Abstract
Abstract An on-chip power supply regulation system for a VLSI circuit such as a dynamic RAM is disclosed. The system includes a high power supply voltage detection circuit and a power supply clamp circuit, where a clamped voltage generated by the clamp circuit biases the functional circuitry when the high power supply voltage detection circuit detects an overvoltage condition. The bias voltage applied to the functional circuitry in the normal operating condition can be a regulated voltage generated from the power supply voltage. Further included in the disclosed circuit is a burn-in voltage generation circuit and a burn-in voltage detection circuit, which can apply an accelerated voltage which depends upon the applied power supply voltage, when the power supply voltage is higher than during normal operation but lower than in the overvoltage condition enabling the clamp operation. A multiplexer connects the regulated voltage, the clamped voltage, or the accelerated voltage, to the circuit depending upon the level of the external power supply voltage. In this way, the offset between the accelerated voltage and the external power supply voltage can be optimized independently from the power supply voltage at which the accelerated voltage is enabled.
Inventors
- 👤 Narasimhan Iyengar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:45
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/14; G11C29/00; G11C29/02; G11C29/021; G11C29/028; G11C29/04; G11C29/50; G11C5/147; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C2029/5004
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
112 words
A memory device, comprising: an array of memory cells formed on a semiconductor substrate; periphery circuits formed on the semiconductor substrate, connected to the array of memory cells; a main driver formed on the semiconductor substrate, to provide voltage to the array of memory cells and to the periphery circuits when they are active; a standby driver formed on the semiconductor substrate, to provide voltage to the array of memory cells and to the periphery circuits when they are inactive; and a voltage generator system formed on the semiconductor substrate to provide a plurality of different voltages that may power the main driver and the standby driver depending upon various operating conditions.
Claim 2
Dependent Claim
112 words
A memory device, comprising: an array of memory cells formed on a semiconductor substrate; periphery circuits formed on the semiconductor substrate, connected to the array of memory cells; a main driver formed on the semiconductor substrate, to provide voltage to the array of memory cells and to the periphery circuits when they are active; a standby driver formed on the semiconductor substrate, to provide voltage to the array of memory cells and to the periphery circuits when they are inactive; and a voltage generator system formed on the semiconductor substrate to provide a plurality of different voltages that may power the main driver and the standby driver depending upon various operating conditions.
Claim 3
Dependent Claim
85 words
The memory device of claim 1 wherein the voltage generator system includes: a burn-in voltage generator system to provide a burn-in voltage during burn-in operating condition; a regulated voltage generator system to provide a regulated voltage during normal operating condition; and a multiplexer connected to the burn-in voltage generator system, the regulated voltage generator system, the main driver, and the standby driver to connect either the burn-in voltage or the regulated voltage to the main driver and the standby driver depending upon the operating condition.
Claim 4
Dependent Claim
92 words
The memory device of claim 2 wherein the voltage generator system receives power from a voltage source external to the semiconductor substrate and further includes: a clamp voltage generator system to provide a clamped voltage during a stress operating condition occurring when the power from the external voltage source exceeds a predetermined value; and wherein the multiplexer is further connected to clamp voltage generator system to connect either the burn-in voltage or the regulated voltage or the clamped voltage to the main driver and the standby driver depending upon the operating condition.
Claim 5
Dependent Claim
79 words
The memory device of claim 3 further including: a substrate bias voltage generator system formed on the semiconductor substrate to provide a substrate bias voltage to the array of memory cells and to the periphery circuits and connected to the main driver and the standby driver to disable the main driver and the standby driver so that the array of memory cells and the periphery circuits are powered down in the event of loss of the substrate bias voltage.
Claim 6
Dependent Claim
82 words
An on chip system to generate voltages for a device formed on a semiconductor chip, comprising: a first generator to produce a regulated voltage; a second generator to produce a burn-in voltage; a third generator to produce a substrate bias voltage; a multiplexer connected to the first and second generators to supply the regulated voltage or the burn-in voltage to the device; and wherein the first, second, and third generators and the multiplexer are formed on the semiconductor chip with the device.
Claim 7
Dependent Claim
82 words
An on chip system to generate voltages for a device formed on a semiconductor chip, comprising: a first generator to produce a regulated voltage; a second generator to produce a burn-in voltage; a third generator to produce a substrate bias voltage; a multiplexer connected to the first and second generators to supply the regulated voltage or the burn-in voltage to the device; and wherein the first, second, and third generators and the multiplexer are formed on the semiconductor chip with the device.
Claim 8
Dependent Claim
28 words
The system of claim 5 wherein the regulated voltage has a value of about 3 volts and the substrate bias voltage has a value of about -2 volts.
Claim 9
Dependent Claim
42 words
The system of claim 6 further comprising: a fourth generator to produce a clamped voltage, connected to the multiplexer; and wherein the burn-in voltage has a value of about 7 volts and the clamped voltage has a value of about 7 volts.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-04 | 1997-10-04 | 1998-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-04 | 2001-10-04 | 2002-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-04 | 2005-10-04 | 2006-04-05 | $7700.00 | Window Closed / Lapsed |