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Patent US5294833A successfully refreshed from Google Patents.
US5294833A
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Integrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
Assignee: North Carolina State University
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Filing: 1992-08-21
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Granted: 1994-03-15
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Expires: 2012-08-21
Abstract
Abstract An ohmic contact to a p-type zinc selenide (ZnSe) layer in a Group II-VI semiconductor device, includes a zinc telluride selenide (ZnTe x Se 1-x ) layer on the zinc selenide layer, a mercury selenide (HgSe) layer on the zinc telluride selenide layer and a conductor (such as metal) layer on the mercury selenide layer. The zinc telluride selenide and mercury selenide layers between the p-type zinc selenide and the conductor layer provide an ohmic contact by eliminating the band offset between the wide bandgap zinc selenide and the conductor. Step graded, linear graded, and parabolic graded layers of zinc telluride selenide may be provided. An integrated heterostructure is formed by epitaxially depositing the ohmic contact on the Group II-VI device. A removable overcoat layer may be formed on the Group II-VI device to allow room temperature atmospheric pressure transfer of the device from a zinc based deposition chamber to a mercury based deposition chamber, for deposition of the ohmic contact. A large area emitter may be formed by limiting the thickness of the mercury selenide layer so that optical radiation passes therethrough. A high efficiency optical emitter may be provided by using zinc telluride selenide or zinc sulfur telluride selenide to form an isoelectronic trap which produces broad and intense light output in the blue/green region.
Inventors
- 👤 Jan F. Schetzina
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 15:20
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H10D; H10D64/00; H10D64/01; H10D64/011; H10H20/01; H10H20/011; H10H20/012; H10H20/81; H10H20/822; H10H20/823; H01S5/02; H01S5/0206; H01S5/0215; H01S5/10; H01S5/18; H01S5/183; H01S5/30; H01S5/305; H01S5/3095; H01S5/32; H01S5/3211; H01S5/3215; H01S5/327; H01S5/34; H01S5/347; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S438/00; Y10S438/936
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
81 words
An ohmic contact for a semiconductor device formed of Group II-VI compound semiconductor materials and including a layer of at least one of p-type zinc selenide (ZnSe) and an alloy thereof, said ohmic contact comprising: a zinc telluride selenide (ZnTe x Se 1-x ) layer on said layer of at least one of p-type ZnSe and an alloy thereof, where 0<x<1; a mercury selenide (HgSe) layer on said ZnTe x Se 1-x layer; and a conductor layer on said HgSe layer.
Claim 2
Dependent Claim
81 words
An ohmic contact for a semiconductor device formed of Group II-VI compound semiconductor materials and including a layer of at least one of p-type zinc selenide (ZnSe) and an alloy thereof, said ohmic contact comprising: a zinc telluride selenide (ZnTe x Se 1-x ) layer on said layer of at least one of p-type ZnSe and an alloy thereof, where 0<x<1; a mercury selenide (HgSe) layer on said ZnTe x Se 1-x layer; and a conductor layer on said HgSe layer.
Claim 3
Dependent Claim
27 words
The ohmic contact of claim 1 wherein x is constant in said ZnTe x Se 1-x layer to provide a step graded ZnTe x Se 1-x layer.
Claim 4
Dependent Claim
33 words
The ohmic contact of claim 1 wherein x decreases across said ZnTe x Se 1-x layer, from said ZnSe layer to said HgSe layer, to provide a graded ZnTe x Se 1-x layer.
Claim 5
Dependent Claim
35 words
The ohmic contact of claim 3 wherein x decreases linearly across said ZnTe x Se 1-x layer, from said ZnSe layer to said HgSe layer, to provide a linear graded ZnTe x Se 1-x layer.
Claim 6
Dependent Claim
35 words
The ohmic contact of claim 3 wherein x decreases nonlinearly across said ZnTe x Se 1-x layer, from said ZnSe layer to said HgSe layer, to provide a nonlinear graded ZnTe x Se 1-x layer.
Claim 7
Dependent Claim
35 words
The ohmic contact of claim 5 wherein x decreases parabolically across said ZnTe x Se 1-x layer, from said ZnSe layer to said HgSe layer, to provide a parabolic graded ZnTe x Se 1-x layer.
Claim 8
Dependent Claim
41 words
The ohmic contact of claim 6 wherein a first half of said ZnTe x Se 1-x layer adjacent said ZnSe is p-type, and a second half of said ZnTe x Se 1-x layer adjacent said HgSe layer is of neutral conductivity.
Claim 9
Dependent Claim
20 words
The ohmic contact of claim 1 wherein at least a portion of said ZnTe x Se 1-x layer is p-type.
Claim 10
Dependent Claim
28 words
The ohmic contact of claim 8 wherein said ZnTe x Se 1-x layer is p-type adjacent said ZnSe layer, and is of neutral conductivity adjacent said HgSe layer.
Claim 11
Dependent Claim
16 words
The ohmic contact of claim 1 wherein said zinc telluride selenide layer is p-type modulation doped.
Claim 12
Dependent Claim
23 words
The ohmic contact of claim 1 wherein said ZnTe x Se 1-x layer includes a thin layer of ZnTe adjacent said HgSe layer.
Claim 13
Dependent Claim
85 words
A semiconductor device formed of Group II-VI compound semiconductor materials comprising: an optical emission heterostructure formed of Group II-VI compound semiconductor materials, and including a layer of at least one of p-type zinc selenide (ZnSe) and an alloy thereof; a zinc telluride selenide (ZnTe x Se 1-x ) layer on said layer of at least one of p-type ZnSe and an alloy thereof, where 0<x<1; a mercury selenide (HgSe) layer on said ZnTe x Se 1-x layer; and a conductor layer on said HgSe layer.
Claim 14
Dependent Claim
85 words
A semiconductor device formed of Group II-VI compound semiconductor materials comprising: an optical emission heterostructure formed of Group II-VI compound semiconductor materials, and including a layer of at least one of p-type zinc selenide (ZnSe) and an alloy thereof; a zinc telluride selenide (ZnTe x Se 1-x ) layer on said layer of at least one of p-type ZnSe and an alloy thereof, where 0<x<1; a mercury selenide (HgSe) layer on said ZnTe x Se 1-x layer; and a conductor layer on said HgSe layer.
Claim 15
Dependent Claim
27 words
The semiconductor device of claim 12 wherein x is constant in said ZnTe x Se 1-x layer to provide a step graded ZnTe x Se 1-x layer.
Claim 16
Dependent Claim
33 words
The semiconductor device of claim 12 wherein x decreases across said ZnTe x Se 1-x layer, from said ZnSe layer to said HgSe layer, to provide a graded ZnTe x Se 1-x layer.
Claim 17
Dependent Claim
35 words
The semiconductor device of claim 14 wherein x decreases linearly across said ZnTe x Se 1-x layer, from said ZnSe layer to said HgSe layer, to provide a linear graded ZnTe x Se 1-x layer.
Claim 18
Dependent Claim
35 words
The semiconductor device of claim 14 wherein x decreases nonlinearly across said ZnTe x Se 1-x layer, from said ZnSe layer to said HgSe layer, to provide a nonlinear graded ZnTe x Se 1-x layer.
Claim 19
Dependent Claim
35 words
The semiconductor device of claim 16 wherein x decreases parabolically across said ZnTe x Se 1-x layer, from said ZnSe layer to said HgSe layer, to provide a parabolic graded ZnTe x Se 1-x layer.
Claim 20
Dependent Claim
42 words
The semiconductor device of claim 17 wherein a first half of said ZnTe x Se 1-x layer adjacent said ZnSe layer is p-type, and a second half of said ZnTe x Se 1-x layer adjacent said HgSe layer is of neutral conductivity.
Claim 21
Dependent Claim
20 words
The semiconductor device of claim 12 wherein at least a portion of said ZnTe x Se 1-x layer is p-type.
Claim 22
Dependent Claim
28 words
The semiconductor device of claim 19 wherein said ZnTe x Se 1-x layer is p-type adjacent said ZnSe layer, and is of neutral conductivity adjacent said HgSe layer.
Claim 23
Dependent Claim
16 words
The semiconductor device of claim 12 wherein said zinc mercury selenide layer is p-type modulation doped.
Claim 24
Dependent Claim
23 words
The semiconductor device of claim 12 wherein said ZnTe x Se 1-x layer includes a thin layer of ZnTe adjacent said HgSe layer.
Claim 25
Dependent Claim
147 words
A semiconductor device formed of Group II-VI compound semiconductor materials comprising: an optical emission heterostructure formed of Group II-VI compound semiconductor materials, and including a layer of at least one of p-type zinc selenide (ZnSe) and an alloy thereof; at least one of a zinc mercury selenide (Zn x Hg 1-x Se) layer and a zinc telluride selenide (ZnTe x Se 1-x ) layer on said layer of at least one of p-type ZnSe and an alloy thereof, where 0<x<1; a mercury selenide (HgSe) layer on said at least one of a Zn x Hg 1-x Se and a ZnTe x Se 1-x layer, said contact to said at least one of a Zn x Hg 1-x Se and a ZnTe x Se 1-x layer, and being sufficiently thin to pass optical emissions from said optical emission heterostructure therethrough; and a conductor layer on said HgSe layer.
Claim 26
Dependent Claim
147 words
A semiconductor device formed of Group II-VI compound semiconductor materials comprising: an optical emission heterostructure formed of Group II-VI compound semiconductor materials, and including a layer of at least one of p-type zinc selenide (ZnSe) and an alloy thereof; at least one of a zinc mercury selenide (Zn x Hg 1-x Se) layer and a zinc telluride selenide (ZnTe x Se 1-x ) layer on said layer of at least one of p-type ZnSe and an alloy thereof, where 0<x<1; a mercury selenide (HgSe) layer on said at least one of a Zn x Hg 1-x Se and a ZnTe x Se 1-x layer, said contact to said at least one of a Zn x Hg 1-x Se and a ZnTe x Se 1-x layer, and being sufficiently thin to pass optical emissions from said optical emission heterostructure therethrough; and a conductor layer on said HgSe layer.
Claim 27
Dependent Claim
17 words
The semiconductor device of claim 23 when said HgSe layer is less than about 100 Å thick.
Claim 28
Dependent Claim
15 words
The semiconductor device of claim 23 wherein said conductor layer is a transparent conductor layer.
Claim 29
Dependent Claim
14 words
The semiconductor device of claim 25 wherein said conductor layer is indium tin oxide.
Claim 30
Dependent Claim
107 words
A semiconductor device formed of Group II-VI compound semiconductor materials, comprising: an optical emission heterostructure formed of Group II-VI compound semiconductor materials, and including a layer of at least one of p-type zinc selenide (ZnSe) and an alloy thereof; a mercury selenide (HgSe) layer on said layer of at least one of p-type ZnSe and an alloy thereof, said HgSe layer being sufficiently thick to provide an ohmic contact to said layer of at least one of p-type zinc selenide layer and an alloy thereof and being sufficiently thin to pass optical emissions from said optical emission heterostructure therethrough; and a conductor layer on said HgSe layer.
Claim 31
Dependent Claim
107 words
A semiconductor device formed of Group II-VI compound semiconductor materials, comprising: an optical emission heterostructure formed of Group II-VI compound semiconductor materials, and including a layer of at least one of p-type zinc selenide (ZnSe) and an alloy thereof; a mercury selenide (HgSe) layer on said layer of at least one of p-type ZnSe and an alloy thereof, said HgSe layer being sufficiently thick to provide an ohmic contact to said layer of at least one of p-type zinc selenide layer and an alloy thereof and being sufficiently thin to pass optical emissions from said optical emission heterostructure therethrough; and a conductor layer on said HgSe layer.
Claim 32
Dependent Claim
17 words
The semiconductor device of claim 27 when said HgSe layer is less than about 100 Å thick.
Claim 33
Dependent Claim
15 words
The semiconductor device of claim 27 wherein said conductor layer is a transparent conductor layer.
Claim 34
Dependent Claim
14 words
The semiconductor device of claim 29 wherein said conductor layer is indium tin oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-14 | 1997-09-13 | 1998-03-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-14 | 2001-09-13 | 2002-03-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-14 | 2005-09-13 | 2006-03-15 | $7700.00 | Window Closed / Lapsed |