EP0475606A2
Expired / Lapsed
EP
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Doping of IIB-VIA semiconductors during molecular beam epitaxy
Assignee: University of Florida
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Filing: 1991-08-20
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Granted: —
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Expires: 2011-08-20
Abstract
Abstract A method and apparatus for enhanced doping of IIB-VIA semiconductors through the use of a free-radical source (30) is described. The process involves the simultaneous production of beams of free-radicals together with group IIB molecules or atoms and group VIA molecules or atoms in a standard molecular beam epitaxy crystal growth system (10). These beams react on a substrate (14) producing single crystal films of doped IIB-VIA semiconductors such as ZnSe:N, for example. The improved doping characteristics result from the high reactivity of radicals produced by the free-radical source (30) with the surface of the growing crystal.
Inventors
- 👤 Robert M. Park
- 👤 James M. Depuydt
- 👤 Hwa Cheng
- 👤 Michael H. Haase
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 16:56
CPC Classifications
H; H10; H10P; H10P10/00; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10H20/8232; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/46; C30B29/48; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3231; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3431; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/30; H01S5/305; H01S5/3054; H01S5/3059; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
52 words
A method of doping IIB-VIA semiconductors comprising the steps of: injecting a group IIB source into a molecular beam epitaxy chamber; injecting a group VIA source into the molecular beam epitaxy chamber; injecting free-radicals into the molecular beam epitaxy chamber from a source; and growing a IIB-VIA semiconductor layer, doped with free-radicals.
Claim 2
Dependent Claim
13 words
The method of claim 1 wherein injecting free-radicals comprises injecting group VA free-radicals.
Claim 3
Dependent Claim
15 words
The method of claim 1 including depositing subsequent layers to form a light emitting diode.
Claim 4
Dependent Claim
79 words
An electromagnetic radiation transducer comprising: a first contact; a p-type ZnSe layer having N D /N A less than or equal to about 0.8, the p-type ZnSe layer electrically connected to the first contact wherein the p-type ZnSe layer is doped with group VA free-radicals; an n-type layer deposited upon the p-type ZnSe layer, wherein the n-type layer interfaces with the p-type ZnSe layer and forms a pn junction; and a second contact electrically connected to the n-type layer.
Claim 5
Dependent Claim
22 words
The electromagnetic radiation transducer of claim 10 wherein the p-type ZnSe layer has a net acceptor concentration of greater than about 5x10¹⁵cm⁻³.
Claim 6
Independent Claim
67 words
A method of producing an electromagnetic radiation transducer comprising: placing an n-type substrate in a molecular beam epitaxy growth chamber; growing an n-type semiconductor layer upon the n-type substrate; growing a IIB-VIA semiconductor layer upon the n-type semiconductor layer; and doping the IIB-VIA semiconductor layer p-type during the step of growing the IIB-VIA semiconductor layer by injecting a free-radical source into the molecular beam epitaxy growth chamber.
Claim 7
Dependent Claim
13 words
The method of claim 15 wherein injecting free-radicals comprises injecting group VA free-radicals.
Claim 8
Independent Claim
68 words
A method of producing an electromagnetic radiation emitting transducer comprising: placing a p-type substrate in a molecular beam epitaxy growth chamber; growing a IIB-VIA semiconductor layer upon the p-type substrate; doping the IIB-VIA semiconductor layer p-type during the step of growing the IIB-VIA semiconductor layer by injecting a free-radical source into the molecular beam epitaxy growth chamber; and growing an n-type semiconductor layer upon the IIB-VIA semiconductor layer.
Claim 9
Dependent Claim
13 words
The method of claim 21 wherein injecting free-radicals comprises injecting group VA free-radicals.
Claim 10
Independent Claim
53 words
A method of producing p-type ZnSe comprising: injecting a Zn source in a molecular beam epitaxy growth chamber; injecting a Se source into the molecular beam epitaxy growth chamber; injecting a free-radical source in the molecular beam epitaxy growth chamber; and growing a p-type ZnSe layer in the molecular beam epitaxy growth chamber.
References Cited (Backward Citations)
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