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US5293301A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device and lead frame used therein

Assignee: Shinko Electric Industries Co Ltd
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Filing: 1991-11-27
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Granted: 1994-03-08
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Expires: 2011-11-27
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Abstract

Abstract A lead frame to be used for a semiconductor device, comprising: a heat sink having a peripheral area and a central projected land on which a semiconductor chip is to be mounted. The heat sink has a relatively good heat radiating characteristic. A plurality of inner leads are provided, each having an inner end superimposed on the peripheral area of the heat sink by an insulating material. A semiconductor chip has a chip surface on which a junction pattern is arranged, and is mounted on the projected land of the heat sink by an insulating adhesive so that the chip surface faces the projected land. TAB leads are provided for electrically connecting the semiconductor chip to the inner leads, and a sealing resin hermetically seals at least the semiconductor chip.

Inventors

  • 👤 Masato Tanaka
  • 👤 Katsuya Fukase
  • 👤 Mitsuharu Shimizu
  • 👤 Toshiyuki Murakami

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 07:37
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/421; H10W70/435; H10W40/00; H10W40/70; H10W40/77; H10W40/778; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/541; H10W72/547; H10W72/551; H10W72/552; H10W72/701; H10W74/00; H10W90/00; H10W90/701; H10W90/751; H10W90/756

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 135 words
A semiconductor device comprising: a lead frame comprising, a first heat sink having a peripheral area and a central projected land, said first heat sink having a relatively good heat radiating characteristic, and a plurality of inner leads, each having an inner end superimposed on said peripheral area of the first heat sink by an electrically insulating material; a semiconductor chip having a chip surface on which a junction pattern is arranged, said semiconductor chip mounted on said central projected land of the first heat sink by an electrically insulating adhesive so that said chip surface faces said projected land; TAB leads for electrically connecting said junction pattern of said semiconductor chip to said inner leads; and a sealing resin hermetically sealing semiconductor chip, said first heat sink, said TAB leads and said inner leads.
Claim 2
Dependent Claim 135 words
A semiconductor device comprising: a lead frame comprising, a first heat sink having a peripheral area and a central projected land, said first heat sink having a relatively good heat radiating characteristic, and a plurality of inner leads, each having an inner end superimposed on said peripheral area of the first heat sink by an electrically insulating material; a semiconductor chip having a chip surface on which a junction pattern is arranged, said semiconductor chip mounted on said central projected land of the first heat sink by an electrically insulating adhesive so that said chip surface faces said projected land; TAB leads for electrically connecting said junction pattern of said semiconductor chip to said inner leads; and a sealing resin hermetically sealing semiconductor chip, said first heat sink, said TAB leads and said inner leads.
Claim 3
Dependent Claim 44 words
A semiconductor device as set forth in claim 1, wherein said heat sink is made of a material selected from the group consisting of Mo, AlN, SiC, Cu-W, Cu and Al having a coefficient of thermal expansion similar to that of said semiconductor chip.
Claim 4
Dependent Claim 61 words
A semiconductor device as set forth in claim 1, wherein said semiconductor chip has a second surface opposite to said chip surface, and said semiconductor device further comprises: a second heat sink having a relatively good heat radiating characteristic, said second heat sink being attached to said second surface of the semiconductor chip by an electrically insulating or electrically conductive adhesive.
Claim 5
Dependent Claim 36 words
A semiconductor device as set forth in claim 3, wherein said first and second heat sinks are made of the same material and selected from the group consisting of Mo, AlN, SiC, Cu-W, Cu and Al.

References Cited (Backward Citations)

JPS532077A Cited
EP0025612A1 Cited
JPS5812341A Cited
US4689110A Cited
US4700273A Cited
US5055914A Cited
US5065281A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-03-07 1997-09-06 1998-03-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-03-07 2001-09-06 2002-03-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-03-07 2005-09-06 2006-03-08 $7700.00 Window Closed / Lapsed

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