Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
177 words
A semiconductor device comprising: a ceramic substrate having a wiring pattern layer formed on a top surface thereof; at least one semiconductor element mounted on said ceramic substrate with a top face thereof facing downward and electrically connected to said wiring pattern layer; a metal cap having at least one through-hole corresponding to an external size of said semiconductor element and an end portion thereof soldered to the top surface of said ceramic substrate, so that a top surface of said metal cap and a bottom surface of said semiconductor element fitted into said through-hole form a flat plane, said metal cap through-hole having a peripheral edge being in contact with at least a portion of a periphery of said semiconductor element; and a heatsink member including a plate portion soldered to said flat plane of said metal cap and said semiconductor element by using a solder plate having a size corresponding to that of said plate portion and set between said flat plane and said plate portion to complete a hermetic sealing of said semiconductor element.
Claim 2
Dependent Claim
177 words
A semiconductor device comprising: a ceramic substrate having a wiring pattern layer formed on a top surface thereof; at least one semiconductor element mounted on said ceramic substrate with a top face thereof facing downward and electrically connected to said wiring pattern layer; a metal cap having at least one through-hole corresponding to an external size of said semiconductor element and an end portion thereof soldered to the top surface of said ceramic substrate, so that a top surface of said metal cap and a bottom surface of said semiconductor element fitted into said through-hole form a flat plane, said metal cap through-hole having a peripheral edge being in contact with at least a portion of a periphery of said semiconductor element; and a heatsink member including a plate portion soldered to said flat plane of said metal cap and said semiconductor element by using a solder plate having a size corresponding to that of said plate portion and set between said flat plane and said plate portion to complete a hermetic sealing of said semiconductor element.
Claim 3
Dependent Claim
36 words
A semiconductor device according to claim 1, wherein said ceramic substrate is made of a material selected from a group consisting of alumina (Al 2 O 3 ), aluminum nitride (AlN), silicon carbide (SiC) and mullite.
Claim 4
Dependent Claim
16 words
A semiconductor device according to claim 1, wherein said ceramic substrate is for a pin-grid package.
Claim 5
Dependent Claim
23 words
A semiconductor device according to claim 2, wherein said wiring pattern layer has a single layer structure formed on said alumina ceramic substrate.
Claim 6
Dependent Claim
35 words
A semiconductor device according to claim 3, wherein said wiring pattern layer has a multilayer structure of conductive layers and insulating layers laminated one on the other and formed on said aluminum nitride ceramic substrate.
Claim 7
Dependent Claim
27 words
A semiconductor device according to claim 1, wherein said semiconductor element has a plurality of bump electrodes, and microleads connected to the plurality of bump electrodes, respectively.
Claim 8
Dependent Claim
27 words
A semiconductor device according to claim 1, wherein said metal cap is made of an alloy selected from a group consisting of Fe-Ni-Co alloy and Fe-Ni alloy.
Claim 9
Dependent Claim
19 words
A semiconductor device according to claim 1, wherein the end portion of said metal cap has a flange shape.
Claim 10
Dependent Claim
27 words
A semiconductor device according to claim 1, wherein the end portion of said metal cap is a portion perpendicular to said top surface of said ceramic substrate.
Claim 11
Dependent Claim
50 words
A semiconductor device according to claim 1, wherein said heatsink member consists of a plate made of a material selected from a group consisting of aluminum nitride ceramic, silicon carbide ceramic, Cu-W alloy, Cu-Mo alloy, AlSi alloy, Cu, Al, and Mo, and is coated with a metal layer for soldering.
Claim 12
Dependent Claim
63 words
A semiconductor device according to claim 1, wherein said heatsink member consists of a plate portion made of a material selected from a group consisting of aluminum nitride ceramic, silicon carbide ceramic, Cu-W alloy, Cu-Mo alloy, AlSi alloy, Cu, Al, and Mo, and is coated with a metal layer for soldering, and a heat dissipation fin portion is fixed to said plate portion.
Claim 13
Dependent Claim
26 words
A semiconductor device according to claim 11, wherein said fin portion is made of a metal selected from a group consisting of Al, AlSi and Cu.
Claim 14
Dependent Claim
15 words
A semiconductor device according to claim 11, wherein said fin portion includes concentric disk portions.
Claim 15
Dependent Claim
15 words
A semiconductor device according to claim 11, wherein said fin portion is a comb-sectioned plate.
Claim 16
Dependent Claim
21 words
A semiconductor device according to claim 11, wherein said fin portion is fixed to said plate portion with a bonding resin.
Claim 17
Dependent Claim
20 words
A semiconductor device according to claim 11, wherein said fin portion is fixed to said plate portion with a solder.
Claim 18
Dependent Claim
22 words
A semiconductor device according to claim 11, wherein said fin portion is fixed to said plate portion by a friction welding method.
Claim 19
Dependent Claim
47 words
A semiconductor device according to claim 12, wherein said heatsink plate portion is made of Al-Si, Cu or Al, and an additional plate made of Cu-W or Cu-Mo and having the same size as that of said heatsink plate portion is placed under said heatsink plate portion.
Claim 20
Dependent Claim
54 words
A semiconductor device according to claim 1, wherein a plurality of semiconductor elements are mounted on said ceramic substrate, said metal cap having through-holes corresponding to the semiconductor elements, respectively, so that the top surface of said metal cap and bottom surfaces of said semiconductor elements fitting into said through-holes form a flat plane.