Surface planarizing methods for integrated circuit devices

Claim 1

In a method of planarizing a side surface of a partially completed integrated circuit device including the steps of coating the side surface with a spin-on glass material, subjecting the glass coating to a final curing process, and back etching the glass coating, the improvement wherein said step of back etching the glass coating is performed prior to said step of subjecting the glass coating to a final curing process.

Claim 8

A method of manufacturing an integrated circuit device comprising, in the sequence set forth below, the steps of: providing an integrated circuit device substructure having a side surface with a spaced apart series of depressed first sections, and a series of second sections disposed over insulation-encapsulated first electrically conductive portions of the substructure; depositing on said side surface a spin-on glass coating which covers said first and second sections of said side surface; hot plate baking the glass coating; nitrogen furnace curing the glass coating; back etching the glass coating to remove the portions thereof previously deposited on said second sections of said side surface; oxygen plasma curing the remaining glass coating portions; depositing a first insulative coating on said side surface after said oxygen plasma curing step; positioning on said first insulative coating electrically conductive circuitry which extends, at predetermined locations, through said first insulative coating and said second sections of said side surface into operative contact with said insulation-encapsulated first electrically conductive portions of the substructure; and covering said electrically conductive circuitry with a second insulative coating.

Claim 9

A method of manufacturing an integrated circuit device comprising, in the sequence set forth below, the steps of: providing an integrated circuit device substructure having a side surface with a spaced apart series of depressed first sections, and a series of second sections disposed over insulation-encapsulated first electrically conductive portions of the substructure; depositing on said side surface a spin-on glass coating which covers said first and second sections of said side surface; hot plate baking the glass coating; nitrogen furnace curing the glass coating; back etching the glass coating to remove the portions thereof previously deposited on said second sections of said side surface; oxygen plasma curing the remaining glass coating portions; depositing a first insulative coating on said side surface after said oxygen plasma curing step; positioning on said first insulative coating electrically conductive circuitry which extends, at predetermined locations, through said first insulative coating and said second sections of said side surface into operative contact with said insulation-encapsulated first electrically conductive portions of the substructure; and covering said electrically conductive circuitry with a second insulative coating.