Circuit for measuring current in a power MOS transistor

Claim 2

A circuit for measuring current in a power MOS transistor, comprising: second and third transistors in series with each other, being of the same type and same technology as, but having a smaller surface than, the power transistor and arranged in parallel with said power transistor, said series transistors having their gates connected to the gate of the power transistor, and means for measuring current in said third transistor, said third transistor being connected to the same reference potential as the source of the power transistor, wherein each said MOS transistor comprises a plurality of identical cells, said power MOS transistor having a different number of cells than said second and third transistors.

Claim 3

A circuit for measuring current in a power MOS transistor, comprising: second and third transistors in series with each other, being of the same type and same technology as, but having a smaller surface than the power transistor and arranged in parallel with said power transistor, said series transistors having their gates connected to the gate of the power transistor; and means for measuring current in said third transistor, said third transistor being connected to the same reference potential as the source of the power transistor, wherein the drain of the third MOS transistor is connected to the non-inverting input of an operational amplifier, the inverting input of which is connected to the drain of the fourth MOS transistor, whose gate is connected to the gate of the third MOS transistor, the output of the operational amplifier being connected to the gate of a fifth transistor connected in series with the fourth transistor across the terminals of a supply source, the lower terminal of the fourth transistor being connected to the reference voltage.

Claim 4

A circuit for measuring current in a power MOS transistor, comprising: second and third transistors in series with each other, being of the same type and same technology as, but having a smaller surface than the power transistor and arranged in parallel with said power transistor, said series transistors having their gates connected to the gate of the power transistor; and means for measuring current in said third transistor, said third transistor being connected to the same reference potential as the source of the power transistor, wherein the drain of the third MOS transistor is connected to the non-inverting input of an operational amplifier, the inverting input of which is connected to the drain of the fourth MOS transistor, whose gate is connected to the gate of the third MOS transistor, the output of the operational amplifier being connected to the gate of a fifth transistor connected in series with the fourth transistor across the terminals of a supply source, the lower terminal of the fourth transistor being connected to the reference voltage.

Claim 5

A circuit for measuring current according to claim 2, wherein the fourth MOS transistor is identical to the fifth MOS transistor.

Claim 6

A circuit for measuring current according to claim 2, further comprising a circuit to cancel offset of said operational amplifier.

Claim 7

A circuit for measuring current according to claim 1, wherein each said MOS transistor comprises a plurality of identical cells, said power MOS transistor having a different number of cells than said second and third transistors.

Claim 8

A circuit for measuring current according to claim 5, wherein current through said power MOS transistor differs from current through said second transistor in proportion to a ratio of a number of said identical cells in said power MOS transistor to a number of said identical cells in said second MOS transistor.

Claim 9

A circuit for measuring current in a power MOS transistor, comprising: second and third transistors in series with each other, being of the same type and same technology as, but having a smaller surface than, the power transistor and arranged in parallel with said power transistor, said series transistors having their gates connected to the gate of the power transistor, and means for measuring current in said third transistor, said third transistor being connected to the same reference potential as the source of the power transistor, wherein said current measuring means comprise a fourth MOS transistor connected as a current mirror with said third MOS transistor.

Claim 10

A circuit for measuring current in a power MOS transistor, comprising: second and third transistors in series with each other, being of the same type and same technology as, but having a smaller surface than, the power transistor and arranged in parallel with said power transistor, said series transistors having their gates connected to the gate of the power transistor, and means for measuring current in said third transistor, said third transistor being connected to the same reference potential as the source of the power transistor, wherein said current measuring means comprise a fourth MOS transistor connected as a current mirror with said third MOS transistor.