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US5286337A
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Reactive ion etching or indium tin oxide
Assignee: Philips North America LLC
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Filing: 1993-01-25
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Granted: 1994-02-15
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Expires: 2013-01-25
Abstract
Abstract Indium tin oxide films deposited on substrates are subjected to reactive ion etching in a plasma containing dissociated hydrogen bromide or a mixture of dissociated hydrogen bromide and dissociated boron tinchloride.
Inventors
- 👤 Len Y. Tsou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:56
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/53; C04B41/5338; C04B41/5346; C04B41/80; C04B41/91; H; H10; H10F; H10F71/00; H10F71/138; C04B2111/00; C04B2111/00474; C04B2111/00844; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
45 words
A method of etching a thin layer of indium tin oxide deposited on a substrate comprising subjecting said layer of indium tin oxide to reactive ion etching in a plasma containing dissociated hydrogen bromide or a mixture of dissociated hydrogen bromide and dissociated boron trichloride.
Claim 2
Independent Claim
45 words
A method of etching a thin layer of indium tin oxide deposited on a substrate comprising subjecting said layer of indium tin oxide to reactive ion etching in a plasma containing dissociated hydrogen bromide or a mixture of dissociated hydrogen bromide and dissociated boron trichloride.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein the plasma contains no dissociated boron trichloride.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the plasma contains dissociated hydrogen bromide and dissociated boron trichloride.
Claim 5
Dependent Claim
26 words
The method of claim 2 wherein the plasma contains in addition a non-reactive gas selected from the group consisting of Ar, He and N 2 .
Claim 6
Dependent Claim
26 words
The method of claim 3 wherein the plasma contains in addition a non-reactive gas selected from the group consisting of Ar, He and N 2 .
Claim 7
Dependent Claim
33 words
The method of claim 2 wherein the etching is carried out at a pressure of 50-200 m Torr, RF power of 100-500W and at a gas flow rate of 10 ˜ 100 SCCM.
Claim 8
Dependent Claim
25 words
The method of claim 2 wherein the indium tin oxide is deposited on a thin layer of silicon dioxide provided on a substrate of silicon.
Claim 9
Dependent Claim
25 words
The method of claim 2 wherein the indium tin oxide is deposited on a thin layer of silicon dioxide provided on a substrate of silicon.
Claim 10
Dependent Claim
16 words
The method of claim 2 wherein the substrate is a silicon dioxide essentially free of quartz.
Claim 11
Dependent Claim
29 words
The method of claim 2 wherein the substrate is quartz and an electrically conductive layer is provided on the quartz substrate prior to the deposition of the ITO layer.
Claim 12
Dependent Claim
10 words
The method of claim 3 wherein the substrate is quartz.
Claim 13
Dependent Claim
29 words
The method of claim 3 wherein the etching is carried out with a gas flow containing HBr and BCl 3 in a ratio by volume of 1:10 to 10:1.
Claim 14
Dependent Claim
31 words
The method of claim 12 wherein the etching is carried out at a pressure of 50-200 m Torr, RF power of 100-250W and a gas flow of 10 ˜ 100 SCCM.
Claim 15
Dependent Claim
18 words
The method of claim 13 wherein the substrate is a layer of silicon dioxide on a silicon substrate.
Claim 16
Dependent Claim
10 words
The method of claim 13 wherein the substrate is quartz.
Claim 17
Independent Claim
114 words
A method of forming a fine transparent, electrically conductive pattern of indium tin oxide on an electrically insulating substrate, said method comprising: (a) depositing a thin transparent layer of indium tin oxide on said substrate, (b) forming a photoresist having the desired pattern on said layer of indium tin oxide to thereby provide exposed sections of said layer of indium tin oxide corresponding to said pattern, (c) exposing said exposed sections of indium tin oxide to reactive ion etching in a plasma containing a mixture of dissociated hydrogen bromide and dissociated boron trichloride for a time sufficient to remove said exposed sections of indium tin oxide from said substrate, and (d) removing said photoresist.
Claim 18
Independent Claim
114 words
A method of forming a fine transparent, electrically conductive pattern of indium tin oxide on an electrically insulating substrate, said method comprising: (a) depositing a thin transparent layer of indium tin oxide on said substrate, (b) forming a photoresist having the desired pattern on said layer of indium tin oxide to thereby provide exposed sections of said layer of indium tin oxide corresponding to said pattern, (c) exposing said exposed sections of indium tin oxide to reactive ion etching in a plasma containing a mixture of dissociated hydrogen bromide and dissociated boron trichloride for a time sufficient to remove said exposed sections of indium tin oxide from said substrate, and (d) removing said photoresist.
Claim 19
Dependent Claim
10 words
The method of claim 16 wherein the substrate is quartz.
Claim 20
Dependent Claim
60 words
The method of claim 17 wherein the etching is carried out with a gas flow containing hydrogen bromide and boron trichloride in a ratio by volume of 1:10 to 10:1, and a non-reactive gas in a percent by volume of 1 to 99%, a gas flow of 10-100SCCM, a pressure of 100-200 mTorr and an RF power of 100-250 W.
Claim 21
Dependent Claim
20 words
The method of claim 18 wherein the non-reactive gas is selected from the group consisting of noble gases and nitrogen.
Claim 22
Dependent Claim
16 words
The method of claim 19 wherein the layer of indium tin oxide is provided by sputtering.
Claim 23
Dependent Claim
14 words
The method of claim 16 wherein the plasma is free of dissociated boron trichloride.
Claim 24
Dependent Claim
32 words
The method of claim 21 wherein the layer of indium tin oxide is provided on a thin layer of silicon dioxide which layer of silicon dioxide is provided on a silicon substrate.
Claim 25
Dependent Claim
49 words
The method of claim 22 wherein the etching is carried out with a gas flow containing dissociated hydrogen bromide and a nonreactive gas in a percent by volume of 1 to 99%, a gas flow of 10-100SCCM, a pressure of 100-200 mTorr and a RF power of 100-500 W.
Claim 26
Dependent Claim
21 words
The method of claim 23 wherein the nonreactive gas is selected from the group consisting of the noble gases and nitrogen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-14 | 1997-08-16 | 1998-02-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-14 | 2001-08-16 | 2002-02-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-14 | 2005-08-16 | 2006-02-15 | $7700.00 | Window Closed / Lapsed |