US5032221A
Expired / Lapsed
US
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Etching indium tin oxide
Assignee: Eastman Kodak Co
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Filing: 1990-05-07
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Granted: 1991-07-16
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Expires: 2010-05-07
Abstract
Abstract ITO is etched by a plasma containing CH 3 . gas.
Inventors
- 👤 Paul L. Roselle
- 👤 Gustavo R. Paz-Pujalt
- 👤 Ronald M. Wexler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:23
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/009; C04B41/53; C04B41/5338; C04B41/5346; C04B41/80; C04B41/91; H; H10; H10F; H10F71/00; H10F71/138; C04B2111/00; C04B2111/00474; C04B2111/00844; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
30 words
A method of etching ITO comprising the steps of: forming a plasma from a gas mixture of CH 4 and H 2 ; and etching the ITO with the plasma.
Claim 2
Independent Claim
30 words
A method of etching ITO comprising the steps of: forming a plasma from a gas mixture of CH 4 and H 2 ; and etching the ITO with the plasma.
Claim 3
Dependent Claim
54 words
The method of claim 1 wherein the plasma is formed by mixing CH 4 gas and H 2 gas in a chamber at a pressure selected to prevent polymerization; and igniting a plasma of the CH 4 and H 2 by subjecting the mixture to RF or microwave radiation or other suitable electric field.
Claim 4
Independent Claim
65 words
A method of etching ITO deposited on an SiO 2 layer on a silicon substrate, comprising the steps of: (a) depositing and patterning a microlithographic mask on the ITO surface to expose portions of the ITO; and (b) igniting a plasma from a mixture of CH 4 and H 2 gases which etch the exposed ITO portions thereby transferring the pattern into the ITO, anisotropically.
Claim 5
Independent Claim
65 words
A method of etching ITO deposited on an SiO 2 layer on a silicon substrate, comprising the steps of: (a) depositing and patterning a microlithographic mask on the ITO surface to expose portions of the ITO; and (b) igniting a plasma from a mixture of CH 4 and H 2 gases which etch the exposed ITO portions thereby transferring the pattern into the ITO, anisotropically.
Claim 6
Dependent Claim
17 words
The method of claim 3 wherein the ratio CH 4 to H 2 is less than 20%
References Cited (Backward Citations)
US4818326A
Cited
US4878993A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-15 | 1995-01-14 | 1995-07-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-15 | 1999-01-14 | 1999-07-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-15 | 2003-01-14 | 2003-07-16 | $7700.00 | Window Closed / Lapsed |